Enhancement-mode HEMT (High Electron Mobility Transistor) device capable of inhibiting current collapse effect, and preparation method thereof

Abstract

The invention discloses an enhancement-mode HEMT (High Electron Mobility Transistor) device capable of inhibiting a current collapse effect, and a preparation method thereof. The HEMT device comprises a heterostructure, a source electrode, a drain electrode and a grid electrode, wherein the source electrode, the drain electrode and the grid electrode are connected with the heterostructure; the heterostructure comprises a first semiconductor used as a channel layer, and a second semiconductor used as a barrier layer, wherein the second semiconductor is formed on the first semiconductor; two-dimensional electron gas is formed in the heterostructure; a quantum well layer and a third semiconductor are formed on the second semiconductor in sequence; the third semiconductor and the second semiconductor have different conduction types; and the grid electrode and the third semiconductor are in electric contact. By use of the device, a quantum well structure is independently directly integrated in a grid electrode area and a non-grid electrode area in the enhancement-mode HEMT device, so that luminescence can be realized when the device is on, the luminescence can be effectively radiated in a surface area between a grid-drain and grid-source and can be deepened into materials, and a releasing process of electrons captured by various types of defect modes can be quickened so as to effectively inhibit a device current collapse effect.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an enhanced HEMT device capable of suppressing current collapse effect and a preparation method thereof. Background technique [0002] Compared with traditional silicon-based MOSFETs, high electron mobility transistors (High Electron Mobility Transistors, HEMTs) based on AGaN / GaN heterojunctions have unique advantages such as low on-resistance, high breakdown voltage, and high switching frequency. Used as a core device in various power conversion systems, it has important application prospects in energy saving and consumption reduction, so it has received great attention from academia and industry. In addition, in order to meet the requirements of failure safety and simplified control circuit, Enhancement-mode HEMT has obvious application advantages. [0003] However, due to the inevitable existence of various electron trap centers (Electron Trap) in epitaxial materials, ...

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Problems solved by technology

However, studies have found that when p-type materials are grown by conventional MOCVD processes, due to the memory effect of Mg, it takes a long time for Mg doping to be incorporated, and high Mg doping cannot be achieved immediately, and the grown materials have weak p-type or unintentional Doped type, the growth of the p-type layer cannot be achieved immediately

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