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GaN-based high-electron-mobility transistor and manufacturing method thereof

A high electron mobility, gallium nitride-based technology, applied in the field of gallium nitride-based high electron mobility transistors, can solve problems such as poor passivation process repeatability

Inactive Publication Date: 2021-04-30
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the repeatability of the passivation process is poor, and the current collapse can only be suppressed at a relatively low bias voltage. When the device is biased at a high voltage, the current collapse is still very serious

Method used

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  • GaN-based high-electron-mobility transistor and manufacturing method thereof
  • GaN-based high-electron-mobility transistor and manufacturing method thereof
  • GaN-based high-electron-mobility transistor and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0059] Embodiment 1: Using a sapphire substrate to fabricate the floating island 5 and the leaky island 6 with a height f of 1 nm and a doping concentration of 4×10 15 cm -3 , the number of independent P-type semiconductor blocks in the floating island 5 is one, and the number of semiconductor cuboid blocks in the drain island 6 is one gallium nitride-based high electron mobility transistor.

[0060] Step 1. Epitaxial GaN material is made transition layer 2 on sapphire substrate 1, as Figure 4 a.

[0061] 1a) GaN material with a thickness of 30nm was epitaxially grown on the sapphire substrate 1 by metal-organic chemical vapor deposition technology. The source flow rate is 22μmol / min;

[0062]1b) GaN material with a thickness of 0.97 μm is epitaxially grown on the GaN material by metal-organic chemical vapor deposition technology to form an undoped transition layer 2. The process conditions are as follows: temperature is 960° C., pressure is 45 Torr, and hydrogen flow rate...

Embodiment 2

[0090] Embodiment 2: The height f of the floating island 5 and the leaky island 6 is 200 nm, and the doping concentration is 5×10 using a silicon carbide substrate. 17 cm -3 , the number of independent P-type semiconductor blocks in the floating island 5 is five, and the number of semiconductor cuboid blocks in the drain island 6 is three GaN-based high electron mobility transistors.

[0091] Step 1. Epitaxially AlN and GaN materials on the silicon carbide substrate 1 to form the transition layer 2, such as Figure 4 a.

[0092] 1.1) Metal-organic chemical vapor deposition technology is used at a temperature of 1000° C., a pressure of 45 Torr, a hydrogen flow rate of 4600 sccm, an ammonia gas flow rate of 4600 sccm, and an aluminum source flow rate of 5 μmol / min, on a silicon carbide substrate 1 Undoped AlN material with an epitaxial thickness of 100nm;

[0093] 1.2) Using metal-organic chemical vapor deposition technology, the epitaxial thickness on the AlN material is Th...

Embodiment 3

[0116] Embodiment 3: Using a silicon substrate to make the floating island 5 and the leaky island 6, the height f is 400nm, and the doping concentration is 5×10 20 cm -3 , the number of independent P-type semiconductor blocks in the floating island 5 is seven, and the number of semiconductor cuboid blocks in the drain island 6 is seven GaN-based high electron mobility transistors.

[0117] Step A. Epitaxial AlN and GaN materials on the silicon substrate 1 from bottom to top to make the transition layer 2, such as Figure 4 a.

[0118] First, AlN material with a thickness of 400nm is epitaxially grown on silicon substrate 1 by metal-organic chemical vapor deposition technology. The source flow rate is 25μmol / min;

[0119] Then, GaN material with a thickness of 8.6 μm was epitaxially grown on the AlN material by metal-organic chemical vapor deposition technology to complete the fabrication of the transition layer 2. The flow rate is 4000 sccm, and the gallium source flow rat...

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Abstract

The invention discloses a GaN-based high-electron-mobility transistor and a manufacturing method thereof, and mainly solves the problems of current collapse of an existing GaN-based device and complex process when high breakdown voltage is realized. The transistor comprises a substrate (1), a transition layer (2) and a barrier layer (3), a source groove (7) is formed in the left edge of the barrier layer, a source (9) is deposited at the upper part of the barrier layer, a drain groove (8) is formed in the right edge of the barrier layer, a drain contact (10) is deposited at the upper part of the barrier layer, a gate island (4) is arranged at the upper part of the barrier layer, and a gate (14) is deposited at the upper part; a floating island (5) and a drain island (6) are arranged on the barrier layer on the right side of the gate island, floating island metal (11) is deposited on the upper portion of the floating island, drain island metal (12) is deposited on the upper portion of the drain island, a groove (13) is arranged between the floating island and the drain contact, and Schottky contacts (15) are deposited inside and on the upper portion of the groove. The transistor is good in forward blocking and reverse blocking, strong in inhibition of current collapse, and can be used as a basic device of a high-reliability power electronic system.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and particularly relates to a gallium nitride-based high electron mobility transistor, which can be used as a basic device of a power electronic system. [0002] technical background [0003] Power electronic systems are widely used in many fields such as aerospace, industrial equipment, electric vehicles, and household appliances. Power devices, as important components of power electronic systems, are important tools for energy conversion and control. Therefore, the performance and reliability of power devices have a decisive impact on the technical indicators and performance of the entire power electronic system. [0004] At present, the performance of Si-based and GaAs-based semiconductor power devices has approached their theoretical limits. In order to break through the research and development bottleneck of current semiconductor power devices and further improve the performance of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/08H01L29/10H01L29/20H01L29/778H01L21/335
CPCH01L29/0611H01L29/0843H01L29/10H01L29/2003H01L29/778H01L29/66462
Inventor 毛维刘晓雨杨翠高北鸾王海永杜鸣马佩军张进成郝跃
Owner XIDIAN UNIV
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