An enhanced hemt device that suppresses the effect of current collapse and its preparation method

Abstract

The invention discloses an enhanced HEMT device capable of suppressing current collapse effect and a preparation method thereof. The HEMT device includes a heterostructure and a source, a drain, and a gate connected to the heterostructure, the heterostructure includes a first semiconductor as a channel layer and a second semiconductor as a barrier layer, the second semiconductor Formed on the first semiconductor, a two-dimensional electron gas is formed in the heterostructure; a quantum well layer and a third semiconductor are sequentially formed on the second semiconductor, the conductivity types of the third and second semiconductors are different, and the gate The pole is in electrical contact with the third semiconductor. The invention directly integrates the quantum well structure in the gate region and the non-gate region of the enhanced HEMT device, so that when the device is in the open state, it can simultaneously realize light emission, and the light emission can be effectively radiated between gate-drain and gate-source The surface area between and deep into the material can accelerate the release process of electrons trapped by various defect states, thereby effectively suppressing the current collapse effect of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an enhanced HEMT device capable of suppressing current collapse effect and a preparation method thereof. Background technique [0002] Compared with traditional silicon-based MOSFETs, high electron mobility transistors (High Electron Mobility Transistors, HEMTs) based on AGaN / GaN heterojunctions have unique advantages such as low on-resistance, high breakdown voltage, and high switching frequency. Used as a core device in various power conversion systems, it has important application prospects in energy saving and consumption reduction, so it has received great attention from academia and industry. In addition, in order to meet the requirements of failure safety and simplified control circuit, Enhancement-mode HEMT has obvious application advantages. [0003] However, due to the inevitable existence of various electron trap centers (Electron Trap) in epitaxial materials, ...

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Problems solved by technology

However, studies have found that when p-type materials are grown by conventional MOCVD processes, due to the memory effect of Mg, it takes a long time for Mg doping to be incorporated, and high Mg doping cannot be achieved immediately, and the grown materials have weak p-type or unintentional Doped type, the growth of the p-type layer cannot be achieved immediately

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