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Enhanced mis-hemt device with backside field plate structure and method of making the same

A MIS-HEMT, plate structure technology, applied in the field of enhanced MIS-HEMT devices and their preparation, can solve the problems of difficulty in releasing electrons and discounts, and achieve the effects of increasing the breakdown voltage and suppressing the current collapse effect.

Active Publication Date: 2017-01-18
SUZHOU NENGWU ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these problems can only solve the "current collapse" when the device works at low voltage, because at low voltage, electrons only fill the trap states on the semiconductor surface, and when the device works at high voltage, electrons will be more inclined to In order to fill the deep-level trap states in the semiconductor body at the bottom, these deep-level trap states will be more difficult to release electrons than the surface trap states. "Collapse" effect will be greatly reduced

Method used

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  • Enhanced mis-hemt device with backside field plate structure and method of making the same
  • Enhanced mis-hemt device with backside field plate structure and method of making the same
  • Enhanced mis-hemt device with backside field plate structure and method of making the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Example 1 see image 3 , the enhanced MIS-HEMT has AlGaN / GaN. GaN is not intentionally doped. AlGaN can be doped with n-type impurities or not. The thickness of AlGaN is about 15 to 30 nm.

[0058] This MIS-HEMT has a drain 5 and a source 6 . The drain 5 and the source 66 form an ohmic contact with AlGaN / GaN, and form a good electrical connection with the two-dimensional electron gas in the channel. The drain 5 and the source 6 are ohmic contacts formed of multilayer metals (eg Ti / Al / Ti / Au or Ti / Al / Ni / Au, etc.) through rapid high-temperature annealing.

[0059] Further, the enhanced MIS-HEMT has a gate 7, between the source 6 and the drain 5, the distance close to the source 6 is relatively short, the gate 7 is located on a dielectric layer 4, and the dielectric layer 4 on top of AlGaN.

[0060] Wherein, both the dielectric layers 4 and 9 can be made of Al 2 o 3 etc., and can be deposited on AlGaN or GaN by PECVD, ALD and other technological means.

[0061] The...

Embodiment 2

[0065] Example 2 see Figure 6 , the enhanced MIS-HEMT has AlGaN / GaN. GaN is not intentionally doped. AlGaN can be doped with n-type impurities or not. The thickness of AlGaN is about 15 to 30 nm.

[0066] This MIS-HEMT has a drain 5 and a source 6 . The drain 5 and the source 66 form an ohmic contact with AlGaN / GaN, and form a good electrical connection with the two-dimensional electron gas in the channel. The drain 5 and the source 6 are ohmic contacts formed of multilayer metals (eg Ti / Al / Ti / Au or Ti / Al / Ni / Au, etc.) through rapid high-temperature annealing.

[0067] Further, the enhanced MIS-HEMT has a gate 7, between the source 6 and the drain 5, the distance close to the source 6 is relatively short, the gate 7 is located on a dielectric layer 4, and the dielectric layer 4 on top of AlGaN. The dielectric layer 4 can be made of Al 2 o 3 etc., and can be deposited on AlGaN by PECVD, ALD and other technological means.

[0068] The back field plate electrode 10 is lo...

Embodiment 3

[0072] Example 3 see Figure 7 , the enhanced MIS-HEMT has AlGaN / GaN. GaN is not intentionally doped. AlGaN can be doped with n-type impurities or not. The thickness of AlGaN is about 15 to 30 nm.

[0073] This MIS-HEMT has a drain 5 and a source 6 . The drain 5 and the source 6 form an ohmic contact with AlGaN / GaN, and form a good electrical connection with the two-dimensional electron gas in the channel. The drain 5 and the source 6 are ohmic contacts formed of multilayer metals (eg Ti / Al / Ti / Au or Ti / Al / Ni / Au, etc.) through rapid high-temperature annealing.

[0074] Further, the enhanced MIS-HEMT has a gate 7, between the source 6 and the drain 5, the distance close to the source 6 is relatively short, the gate 7 is located on a dielectric layer 4, and the dielectric layer 4 on top of AlGaN. The dielectric layer 4 can be made of Al 2 o 3 etc., and can be deposited on AlGaN by PECVD, ALD and other technological means.

[0075] The back field plate electrode 10 is loc...

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Abstract

The invention discloses an enhancement type MIS-HEMT device with a back surface field plate structure and a manufacturing method thereof. The device can be manufactured through a semi-conductor device processing technology, and comprises a source electrode, a drain electrode, a heterogeneous structure and a back surface field plate electrode. The source electrode, the drain electrode and the heterogeneous structure form Ohmic contact. The heterogeneous structure comprises a first semi-conductor layer and a second semi-conductor layer, wherein the first semi-conductor layer and the second semi-conductor layer are sequentially arranged in the set direction, the first semi-conductor layer is disposed between the source electrode and the drain electrode, the surface of the first semi-conductor layer is provided with a grid electrode, and two-dimensional electron gas depletion regions are distributed in the heterogeneous structure and an area corresponding to the grid electrode. A first insulating dielectric layer is arranged between the grid electrode and the first semi-conductor layer to form an MIS structure. The back surface field plate is arranged on the surface, far away from one side of the first semi-conductor layer, of the second semi-conductor layer. The enhancement type MIS-HEMT device with the back surface field plate structure and the manufacturing method can effectively improve breakdown voltage, and can prevent the current collapse effect to the largest extent.

Description

technical field [0001] The invention relates to a MIS-HEMT (High Electron Mobility Transistor, high electron mobility transistor) device, in particular to an enhanced MIS-HEMT device with a back field plate structure and a preparation method thereof. Background technique [0002] Group III nitride semiconductor enhanced MIS-HEMT devices, due to piezoelectric polarization and spontaneous polarization effects, will form a two-dimensional electron gas with high concentration and high mobility at the heterojunction interface, such as the AlGaN / GaN interface. In addition, the HEMT device with group III nitride semiconductor as the substrate material can obtain a high breakdown voltage and a low specific on-resistance at the same time. Due to the large band gap of the material, it has high high temperature operating performance and good radiation resistance. Therefore, it is not only suitable for high-frequency power amplifier devices, but also applicable to the field of power el...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/40H01L29/778H01L21/335
CPCH01L29/402H01L29/66462H01L29/7787
Inventor 董志华蔡勇于国浩张宝顺
Owner SUZHOU NENGWU ELECTRONICS TECH
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