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A High Frequency Selective Substrate Integrated Waveguide Balanced Dual-Passband Filter

A substrate-integrated waveguide and dual-pass filter technology, applied in the microwave field, can solve the problems of only focusing on common mode signals, small power capacity, high loss, and achieve excellent frequency selection performance, high power capacity, and high integration. Effect

Active Publication Date: 2019-05-07
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Most of the existing balanced dual-passband filters at home and abroad are based on microstrip line structure design, which has the problems of high loss and small power capacity; the design of high-frequency selective balanced dual-passband filters based on substrate integrated waveguide technology There are few studies, often only focusing on the suppression of common-mode signals, less consideration of differential-mode frequency selection performance, and unsatisfactory out-of-band suppression performance

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  • A High Frequency Selective Substrate Integrated Waveguide Balanced Dual-Passband Filter
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  • A High Frequency Selective Substrate Integrated Waveguide Balanced Dual-Passband Filter

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Embodiment 1

[0018] combine figure 1 with figure 2 , the high-frequency selective substrate integrated waveguide balanced double-passband filter of the present invention comprises an upper layer dielectric substrate 5 and a lower layer dielectric substrate 11 stacked up and down, adopts Rogers 5880 dielectric board design, and each layer of dielectric thickness is 20mil, relatively The dielectric constant is 2.2. The upper metal layer 1 of the upper dielectric substrate 5 and the lower metal layer 12 of the lower dielectric substrate 11 are rectangular, with a length of 32 mm and a width of 27 mm; the upper dielectric substrate 5 is provided with a circle of upper metallized through holes 2 , the lower dielectric substrate 11 is also provided with a circle of lower layer metallized through holes 13, the diameter of the through holes is 0.6 mm, the distance is 1 mm, the length L1 of the metal through holes is 30 mm, and the width W1 is 25 mm;

[0019] The upper metal layer 1 is rectangul...

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Abstract

The invention discloses a high-frequency selective substrate integrated waveguide balanced double-pass filter, which comprises an upper dielectric substrate and a lower dielectric substrate. The upper dielectric substrate is provided with an upper metal layer, and the lower dielectric substrate is provided with a lower dielectric substrate. A metal layer, an intermediate metal layer is set between the upper and lower dielectric substrates; each of the upper and lower dielectric substrates is provided with a circle of metallized through holes; the upper metal layer, the upper dielectric substrate, the middle metal layer and the upper dielectric substrate The metallized through holes in the middle form the upper resonant cavity; the lower metal layer, the lower dielectric substrate, the middle metal layer and the metallized through holes in the lower dielectric substrate form the lower resonant cavity; the upper and lower resonant cavities respectively pass through the other two about The symmetrical microstrip line in the center of the resonant cavity is used for differential feeding; the middle metal layer is provided with four rectangular holes. The invention has good frequency selection performance, reduced volume, and has the characteristics of low loss and high power capacity.

Description

technical field [0001] The invention relates to the field of microwave technology, in particular to a high-frequency selective substrate integrated waveguide balanced double-passband filter. Background technique [0002] Since the concept of substrate-integrated waveguides was proposed, it has received extensive attention from scholars at home and abroad. The substrate-integrated waveguide consists of upper and lower metal surfaces, a dielectric plate between the metals, and metallized vias connecting the metal plates on both sides. This planar structure can be realized through the PCB process. Compared with the microstrip structure with a similar process, the substrate integrated waveguide inherits most of the advantages of the traditional dielectric filled rectangular waveguide, such as low insertion loss and small radiation, and also has many advantages of the microstrip structure, such as low profile, Easy to process and easy to integrate. These advantages of substrate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/208
CPCH01P1/2088
Inventor 李鹏季佳恺芮义斌谢仁宏郭山红
Owner NANJING UNIV OF SCI & TECH