System and method of ionization total dose detection based on SOI structure

A detection system and detection method technology, applied in the field of radiation environment detection, can solve the problems of poor sensitivity and large system power consumption, and achieve the effect of improving sensitivity

Active Publication Date: 2017-06-06
XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the technical problems of poor sensitivity and high power consumption of the existing total ionization

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • System and method of ionization total dose detection based on SOI structure
  • System and method of ionization total dose detection based on SOI structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] see figure 1 , The technical solution of the present invention includes screening probes with SOI structure, adjusting and confirming detector parameters, obtaining and calibrating the detector response under the radiation source, and obtaining the relationship between the detector response and the dose of the radiation source. Specifically, the flow of the total ionization dose detection method provided by the present invention is as follows:

[0023] (1) Screen the probes with SOI structure: conduct a thorough test on the screened probes, place the probes in a radiation source that can cause ionizing radiation damage, and obtain the threshold voltage drift (that is, obtain the I-V characteristics) through the shift test to confirm the Probe alignment is sensitive to ionization damage. Among them, the threshold voltage drift is collected offline with a semiconductor test system keithley 4200.

[0024] (2) Build the detector: the detector consists of two PCB boards, o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to the radiation environment detection technology field, and relates to the system and method of ionization total dose detection based on an SOI (Silicon-On-Insulator) structure. The detection system comprises a probe module, a constant flow source module, a data collection module and a control module. The input end of the control module is connected with a PC, the output end of the control module is connected with the constant flow source module, the data collection module and the probe module; the constant flow source module is connected with the probe module; the input end of the data collection module is connected with the probe module, and the output end of the data collection module is connected with the PC; and the probe module comprises a radiation sensor of the SOI structure. The system and method of the ionization total dose detection based on the SOI structure realizes the sensor nationalization of a satellite PMOS dosimeter, improves the sensitivity, and can be used for the test for lower dosage accumulation; and the detector is portable, flexible and easily used based on the structure, and is suitable for the space environment monitoring, the semiconductor device ionization effect assessment and the life prediction.

Description

technical field [0001] The invention relates to the technical field of radiation environment detection, and relates to a total ionization dose detection system and method based on an SOI structure. Background technique [0002] In the space environment, various charged particles and their secondary rays captured by the Milky Way, the solar system, and the earth's magnetic field interact with spacecraft and loads to generate a large amount of secondary radiation, causing radiation damage to materials, components, and electronic systems of spacecraft. It leads to failure or failure of various payloads of the spacecraft, which seriously affects the reliability and operation life of the spacecraft. Therefore, it is very important to study the absorbed dose of electronic components and electronic systems that cause radiation damage in space charged particle radiation and the radiation environment inside and outside the planet, and measuring the space radiation environment is an i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01T1/02G05B19/042
CPCG01T1/026G05B19/0428G05B2219/2604G05B2219/2656
Inventor 孙静郭旗施炜雷于新何承发余学峰陆妩
Owner XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap