Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for operation of non-volatile memory system and memory controller

A memory system, non-volatile technology, used in memory systems, static memory, read-only memory, etc., can solve problems such as loss of data

Active Publication Date: 2022-02-11
SAMSUNG ELECTRONICS CO LTD
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Flash memory devices are non-volatile memory devices, but data stored therein can be lost due to various factors such as temperature, read disturbance, program disturbance, and charge loss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for operation of non-volatile memory system and memory controller
  • Method for operation of non-volatile memory system and memory controller
  • Method for operation of non-volatile memory system and memory controller

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Hereinafter, embodiments of the inventive concept will be described with reference to the accompanying drawings. Hereinafter, only details such as detailed configurations and structures are provided to help understanding of embodiments of the inventive concept. Various changes and modifications may be made to the embodiments described herein without departing from the embodiments of the inventive concept. Also, descriptions about well-known functions and constructions are omitted for clarity and conciseness. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Definitions of terms used herein can be determined based on details described in the detailed description.

[0033] As is conventional in the field of the inventive concept, the embodiments are described and illustrated in the drawings in terms of functional blocks, units and / or modules. Those skilled in the art will apprec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Methods for operation of non-volatile memory systems and memory controllers are provided. A method of operating a non-volatile memory system including a non-volatile memory device having a plurality of memory blocks includes: selecting a source block of the plurality of memory blocks in the non-volatile memory system; The number of program and erase cycles performed to perform a reclaim operation for the source block.

Description

[0001] Priority is claimed from Korean Patent Application No. 10-2015-0171644 filed with the Korean Intellectual Property Office on December 3, 2015, the entire contents of which are hereby incorporated by reference. technical field [0002] Embodiments of the inventive concept relate to semiconductor memories, and more particularly, to methods of operating memory devices. Background technique [0003] The semiconductor memory is implemented using semiconductor materials such as silicon (Si), germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), and the like. Semiconductor memory devices can be roughly classified into volatile memory devices or nonvolatile memory devices. [0004] Volatile memory devices lose data stored therein when powered off. The volatile memory device can be static random access memory (SRAM), dynamic random access memory (DRAM), or synchronous DRAM. Non-volatile memory devices retain data stored therein even when power is removed. The non...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34G06F12/02
CPCG06F12/0246G11C16/3495G06F3/0614G11C16/0483G11C2029/0409G11C2029/0411G06F3/061G06F3/064G06F3/0679G06F11/1068G11C29/52G06F3/0619G06F3/0659G11C16/10G11C16/26G11C16/3431
Inventor 朴永昊朴赞益
Owner SAMSUNG ELECTRONICS CO LTD