Manufacturing method of GaN acoustic-electric integrated device

Abstract

The invention relates to a manufacturing method of a GaN acoustic-electric integrated device. The manufacturing method of a GaN acoustic-electric integrated device is characterized in that through design of an epitaxial structure, a GaN HBT device, a PN amplitude limiter and an AIN surface acoustic wave (SAW) device are integrated into one chip, so that device grade of integration of the whole RF reception assembly, and then the following ideas can be realized: in the future radio frequency communication, a radiofrequency signal enters a radio frequency reception assembly, and the filtering function can be realized through the AIN SAW; the filtered radiofrequency signal is amplified by the GaN HBT device, and at the same time the amplified signal is sent to a subsequent signal processer, such as a mixer, after passing through a GaN amplitude limiter for providing convenience for subsequent signal processing; and on the other aspect, in design of the GaN HBT device, a graded bedding design is utilized for AlxGa1-xN so as to eliminate the conduction band glitch to enable an electron to be injected into a base region from an emitter region more smoothly.

Description

technical field [0001] The invention relates to a method for manufacturing a GaN acoustic-electric integrated device, belonging to the field of semiconductor manufacturing. Background technique [0002] Since the beginning of the 21st century, society has entered the information age of ultra-high-speed development, global data services have shown explosive growth, and radio frequency communication technology has been widely used. [0003] At present, the receiving end architecture of the mainstream RF receiver is: SAW device + signal amplifier + limiter. Three independent chips can form one RF receiving end, but the three independent chips have the following problems: [0004] 1. Debugging is required during assembly, which is not conducive to large-scale production and the intervention of human factors introduces uncertain factors, which is not conducive to improving the quality of the entire component; [0005] 2. The three independent chips cannot be integrated, which is...

AI Technical Summary

Problems solved by technology

[0004] 1. Debugging is required during assembly, which is not conducive to large-scale production and the intervention of human factors introduces uncertain factors, which is not conducive to improving the quality of the entire component;

[0005] 2. The three independent chips cannot be integrated, which is not conducive to further miniaturization and multi-function of the system;

[0008] At the same time, for Al x Ga 1-x For the N / GaN heterojunction, on the one hand, a larger Al content is beneficial to reduce the phenomenon of current gain reduction caused by hole injection at the emitter junction. It does not have to be much greater than the base concentration as in the homojunction bipolar transistor. , the heterojunction can allow the base region to be more doped than the emitter region, so a lightly doped emitter region can be used to reduce the emitter junction capacitance, but it is easy to cause Al x Ga 1-x There is a large conduction band barrier peak at the N / GaN interface

With the increase of voltage during use, it will inevitably bring problems such as the increase of composite current.

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