Large-area molybdenum disulfide field-effect transistor based on high-k gate dielectric and its fabrication

Abstract

The invention discloses a large-area molybdenum disulfide field effect transistor based on a high-k gate medium and preparation thereof. The field effect transistor comprises a Si substrate, a HfO2 gate dielectric layer of which the film surface roughness is 0.21-0.65nm, a single layer molybdenum disulfide triangular plate conductive channel of which the field effect thickness is 0.7-1.0nm and metal source and drain electrodes which are arranged on the conductive channel, wherein the Si substrate, the HfO2 gate dielectric layer and the single layer molybdenum disulfide triangular plate conductive channel are laminated in turn. The thickness-controllable HfO2 gate dielectric layer is grown and prepared on the Si substrate through ALD. The single layer large-area MoS2 triangular plate conductive channel is directly grown and prepared on the gate dielectric through CVD. The field effect transistor has great back-gate voltage regulation and control characteristic, the field effect mobility is greatly enhanced, the size of MoS2 is large, the repeatability is great, the yield is high and time consumption is low so that preparation and industrial production of the MoS2 large-scale integrated circuit can be realized.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device manufacturing, and in particular relates to a large-area molybdenum disulfide field-effect transistor based on a high-k gate dielectric and its preparation. Background technique [0002] Silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are widely used in various electronic products. According to Moore's Law, the integration level of chips doubles every 18 months to 2 years, that is, the processing line width is reduced by half. The processing limit of silicon materials is generally considered to be a line width of 10 nanometers, and the development path of Moore's Law is gradually approaching the end by using silicon-based semiconductor materials with decreasing dimensions. With the continuous development of integrated circuit technology according to Moore's law, the integration level continues to increase, and the feature size of transistors continues to sh...

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Problems solved by technology

MoS prepared due to mechanical exfoliation method 2 The small size, low output, poor repeatability, and difficult positioning, the thickness of the obtained sample can not be controlled, only randomly selected, and the preparation process takes a long time, it is difficult to realize MoS 2 large-scale production and integrated processing

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