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A kind of cerium oxide abrasive preparation method and cmp polishing application thereof

A technology of cerium oxide and abrasives, which is applied in chemical instruments and methods, polishing compositions containing abrasives, rare earth metal oxides/hydroxides, etc., can solve the problem of low purity of cerium oxide products, uneven particle size, and difficulties in meeting CMP particle size, surface morphology and other issues, to achieve excellent polishing effect, uniform particle size, good dispersion between particles

Active Publication Date: 2020-10-09
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cerium oxide product prepared by the traditional ball milling dispersion method has low purity and uneven particle size, which makes it difficult to meet the requirements of CMP for abrasive particle size and surface morphology.

Method used

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  • A kind of cerium oxide abrasive preparation method and cmp polishing application thereof
  • A kind of cerium oxide abrasive preparation method and cmp polishing application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] At room temperature, a cerium oxide precursor slurry with a solid content of 5% was prepared, the slurry system contained 0.1% PAA at the same time, and the pH of the slurry system was adjusted to 2.0. The above-mentioned slurry system is subjected to ball milling until the average particle size of the cerium oxide particles reaches 50 nanometers, the ball milling is stopped, and after the ball milling, the obtained product is washed 3 times, then the washed cerium oxide is configured as a dispersed slurry with a solid content of 5%. The pH value of the dispersion system was adjusted to 2.0, and hydrothermally treated at 100° C. for 24 hours. After cooling, the cerium oxide abrasive was obtained, which could be used as an abrasive for further application in CMP polishing.

Embodiment 2

[0020] At room temperature, a cerium oxide precursor slurry with a solid content of 30% was prepared, the slurry system contained 1% PAA at the same time, and the pH of the slurry system was adjusted to 9.0. The above-mentioned slurry system is subjected to ball milling until the average particle size of cerium oxide particles reaches 300 nanometers, the ball milling is stopped, and after the ball milling, the obtained product is washed 3 times, then the washed cerium oxide is configured as a dispersed slurry with a solid content of 30%. The pH value of the dispersion system was adjusted to 4.0, and hydrothermally treated at 200° C. for 0.5 hour, and the cerium oxide abrasive obtained after cooling could be further applied in CMP polishing.

Embodiment 3

[0022] At room temperature, a cerium oxide precursor slurry with a solid content of 15% was prepared, the slurry system contained 0.5% PAA at the same time, and the pH of the slurry system was adjusted to 8.0. The above-mentioned slurry system is subjected to ball milling until the average particle size of the cerium oxide particles reaches 100 nanometers, the ball milling is stopped, and the obtained after ball milling is washed 3 times, then the washed cerium oxide is configured as a dispersed slurry with a solid content of 15%. The pH value of the dispersion system was adjusted to 2.0, and hydrothermally treated at 150° C. for 12 hours, and the cerium oxide abrasive obtained after cooling could be further applied in CMP polishing.

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Abstract

The invention discloses a preparation method for a cerium oxide abrasive and application of the cerium oxide abrasive to CMP polishing. The preparation method mainly comprises the following steps: treating a cerium oxide precursor by using a mechanical ball milling method; and then subjecting the ball-milled cerium oxide precursor to hydro-thermal treatment under the conditions of high temperature and high pressure. According to the invention, ball-milling dispersion and hydro-thermal treatment are combined for the first time for synthesis of a cerium oxide nano-material; and the cerium oxide nano-material presents good polishing characteristics when applied to CMP polishing.

Description

technical field [0001] The invention relates to a preparation method of cerium oxide abrasive and its application in CMP polishing. Background technique [0002] Because cerium oxide has high polishing activity to silicon dioxide and can achieve high polishing effect at a low solid content, it has attracted much attention as an abrasive in the field of chemical mechanical polishing fluid. For example, there have been many reports on the use of cerium oxide as an abrasive for shallow trench isolation (STI) process polishing (such as patents 201310495424.5, 200510069987.3). At the same time, chemical mechanical polishing fluids using cerium oxide as abrasives have greater application prospects and market advantages in terms of performance and cost compared with polishing fluids using traditional silicon oxide or aluminum oxide materials as abrasives. [0003] Studies have shown that when cerium oxide is used as an abrasive, its own particle characteristics are very important ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/14C01F17/00C09G1/02H01L21/306
CPCC01F17/206C09G1/02C09K3/1409H01L21/30625
Inventor 尹先升贾长征王雨春
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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