Temperature adjustment device and method of focusing ring

Abstract

The invention provides a temperature adjustment device and method of a focusing ring. Energy is radiated onto the focusing ring by plasma and is downwards transferred to a base by a first thermal conduction pad, an insulation ring and a second thermal conduction pad, the first thermal conduction pad is in contact with a lower surface of the focusing ring, the insulation ring is in contact with a lower surface of the first thermal conduction pad, the second thermal conduction pad is in contact with a lower surface of the insulation ring, the base is in contact with the second thermal conduction pad, cooling and temperature reduction are performed by a cooling system arranged at the base, a heater which is arranged in a shielding ring is started to generate a controllable external heating source, the shielding ring is connected with the ground, energy of the external heating source is transferred to the focusing ring by the shielding ring, a third thermal conduction pad, an insulation ring and the first thermal conduction ring, the third thermal conduction pad is in contact with the shielding ring, the insulation ring is in contact with the third thermal conduction pad, and controllable temperature rise is performed on the focusing ring. By providing a good heat conduction cooling path and by combining a heating mode of a controllable parameter, fine control on a working temperature of the focusing ring is achieved, the focusing ring is tunable during etching, so that the process demand is satisfied.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a temperature adjustment device and method for a focus ring. Background technique [0002] The plasma processing device is to pass a reaction gas containing an appropriate etchant or deposition source gas into the vacuum reaction chamber, and then input radio frequency energy to the vacuum reaction chamber to activate the reaction gas to ignite and maintain the plasma , so that the material layer on the surface of the substrate is etched by plasma or the material layer is deposited on the surface of the substrate, and then the semiconductor substrate or the plasma plate is processed. [0003] Such as figure 1 As shown, in an existing capacitively coupled plasma processing device, a vacuum reaction chamber 1 is included, and the top of the reaction chamber 1 is provided with a gas shower head 2 and other air intake devices, and can simultaneously realize the upp...

AI Technical Summary

Problems solved by technology

However, the requirements for the operating temperature of the focus ring 5 are different in different processes. The prior art only considers how to improve the heat transfer performance of the focus ring 5 or how to keep its temperature constant, but there is no effective means to control the temperature of the focus ring 5. Working temperature for further control adjustment

In addition, the focus ring 5 is located in the radio frequency area. If temperature adjustment devices such as heaters are directly installed in the focus ring 5, not only the circuit layout is complicated, but also a filter must be installed to filter high frequencies, otherwise radio frequency interference will be generated and affect the entire device. The treatment response effect

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