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Orthogonally magnetized controllable resistor based on direct current memory flux magnetism helping and adjusting

A technology of memory magnetic flux and orthogonal magnetization, applied in variable inductors, inductors, variable transformers, etc., can solve the problem that the orthogonal magnetron core should not be replaced, the electromagnetic power of the excitation coil is large, and the operating efficiency of the system is reduced. problems, to achieve the effects of fast response and precise control, small excitation power, and improved operating efficiency

Active Publication Date: 2017-07-28
SUZHOU WUBIAN ELECTRICAL TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages of the above two orthogonal controllable reactors are that the structure is complex, the orthogonal magnetic control core is not suitable for replacement, the control winding is directly exposed to the AC main magnetic field, and the eddy current loss of the wire is large.
[0005] In addition, in the prior art, other orthogonal controllable reactors also have many deficiencies, for example, the reactor that uses the DC excitation winding to generate the DC orthogonal magnetic field, when the reactor inductance value adjustment range is large, the excitation coil The electromagnetic power is large, and the operating efficiency of the system will be reduced

Method used

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  • Orthogonally magnetized controllable resistor based on direct current memory flux magnetism helping and adjusting
  • Orthogonally magnetized controllable resistor based on direct current memory flux magnetism helping and adjusting
  • Orthogonally magnetized controllable resistor based on direct current memory flux magnetism helping and adjusting

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Embodiment Construction

[0027] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, so as to define the protection scope of the present invention more clearly.

[0028] Such as Figure 1 to Figure 10 As shown, an orthogonal magnetization controllable reactor based on DC memory flux assisted magnetic modulation, including AC working winding 1, AC working core 2 and DC memory magnetic flux orthogonal magnetic assisted magnetic modulation device 3, the DC The memory magnetic flux orthogonal magnetic-assisted magnetic adjustment device 3 is composed of an orthogonal DC working iron core 31, a DC exciting winding 32 and an alnico permanent magnet 33 with a DC magnetic field memory function. Both sides of the orthogonal DC working iron core 31 are An opening is provided, and the core column of the AC working co...

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Abstract

The invention discloses an orthogonally magnetized controllable resistor based on direct current memory flux magnetism helping and adjusting. The resistor comprises an alternating current working winding, an alternating current working iron core and a direct current memory flux orthogonal magnetism helping and adjusting device. The direct current memory flux orthogonal magnetism helping and adjusting device is composed of an orthogonal direct current working iron core, a direct current exciting winding, and an aluminum-nickel-cobalt permanent magnet with a direct current magnetic field memory function. Openings are formed in the two sides of the orthogonal direct current working iron core, a core column of the alternating current working iron core penetrates from the opening in one side of the orthogonal direct current working iron core, the aluminum-nickel-cobalt permanent magnet is embedded into the opening in the other side of the orthogonal direct current working iron core, the direct current exciting winding is wound around the aluminum-nickel-cobalt permanent magnet, and the alternating current working winding is wound around the alternating current working iron core. The resistor is simple in structure, the reactance is linear, and can be smoothly adjusted within a wide range, electromagnetic loading of the direct current exciting winding is greatly relieved through aluminum-nickel-cobalt magnetism helping and adjusting, and the running efficiency of a system is improved.

Description

technical field [0001] The invention relates to the technical field of orthogonal magnetization reactors, in particular to an orthogonal magnetization controllable reactor based on DC memory flux-assisted magnetic modulation. Background technique [0002] As a reactive power compensation device with adjustable inductance, controllable reactor has been widely used in ultra-high voltage and ultra-high voltage circuits of modern power grids. With the increasing level of the power grid and the increasing scale of the power grid, power quality has received unprecedented attention, so the performance improvement of the reactor has become more and more important. [0003] The structure of the orthogonal magnetization controllable reactor adopts a special iron core orthogonal structure, so that the magnetic field generated by the control winding and the magnetic field generated by the working winding are orthogonal. It is a DC magnetron reactor. By adjusting the current in the DC e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F29/14H02P13/12
CPCH01F29/14H01F29/146H01F2029/143H02P13/12
Inventor 岳泽
Owner SUZHOU WUBIAN ELECTRICAL TECH CO LTD
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