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High purity polysilocarb derived silicon carbide materials, applications and processes

A polysilocarb and silicon carbide technology, which is applied to polysilocarb compositions, manufactures silicon carbide and SiC compositions, and SiC fields made of polysilocarb materials, and can solve problems such as unsatisfied

Pending Publication Date: 2017-08-01
PALLIDUS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is believed that prior to embodiments of the present invention, in practice, this need has not been met

Method used

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  • High purity polysilocarb derived silicon carbide materials, applications and processes
  • High purity polysilocarb derived silicon carbide materials, applications and processes
  • High purity polysilocarb derived silicon carbide materials, applications and processes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0330] Formulate polysilocarb formulations using a hybrid approach. The formulation was prepared by mixing 41% MHF and 59% TV at room temperature. The precursor formulation has 0.68 moles of hydrogen, 0.68 moles of vinyl and 1.37 moles of methyl groups. The precursor formulation has the following molar amounts of Si, C and O based on 100 g of formulation.

[0331]

[0332]

[0333] According to calculations, the SiOC derived from the formulation had a calculated 1.37 moles of C with 0% excess C after all CO had been removed.

Embodiment 2

[0335] Formulate polysilocarb formulations using a hybrid approach. The formulation was prepared by mixing 90% methyl terminated phenylethyl polyoxysilane (with 27% X) and 10% TV at room temperature. The precursor formulation has 1.05 moles of hydrogen, 0.38 moles of vinyl, 0.26 moles of phenyl and 1.17 moles of methyl groups. The precursor formulation has the following molar amounts of Si, C and O based on 100 g of formulation.

[0336]

[0337] According to calculations, the SiOC derived from the formulation would have a calculated 2.31 moles of C with a 98% excess of C after all the CO had been removed.

Embodiment 3

[0339] Formulate polysilocarb formulations using a hybrid approach. The formulation was prepared by mixing 70% methyl terminated phenylethyl polyoxysilane (with 14% X) and 30% TV at room temperature. The precursor formulation has 0.93 moles hydrogen, 0.48 moles vinyl, 0.13 moles phenyl and 1.28 moles methyl. The precursor formulation has the following molar amounts of Si, C and O based on 100 g of formulation.

[0340]

[0341] According to calculations, the SiOC derived from the formulation would have a calculated 1.77 moles of C with a 38% excess of C after all the CO had been removed.

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Abstract

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

Description

[0001] This application claims: (i) priority under 35 U.S.C. § 119(e)(1) of U.S. Provisional Application No. 62 / 055,397, filed September 25, 2014; (ii) under 35 U.S.C. § 119(e)(1), priority of U.S. Provisional Application No: 62 / 055,461, filed September 25, 2014; (iii) under 35 U.S.C. § 119(e)(1), filed 2014 U.S. Provisional Application No: 62 / 055,497, filed September 25, 2015; and (iv) U.S. Provisional Application No. filed February 4, 2015 under 35 U.S.C. § 119(e)(1) : 62 / 112,025, the entire disclosures of which are hereby incorporated by reference. technical field [0002] The present invention relates to polyorganic compositions, methods, structures and materials; polymer derived prefabricated ceramic materials and ceramic materials and methods; in particular polysilocarb compositions, methods, structures and materials. The invention also relates to methods for the manufacture of silicon carbide (SiC) and SiC compositions and structures, components, materials and devices ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/52
CPCC04B35/571F41H5/0414C04B37/005C04B37/045C04B2235/5445C04B2235/72C04B2235/721C04B2235/94C04B2235/95C04B2235/96C04B2235/9607C04B2237/083C04B2237/365C04B2237/385C01B32/956H01L29/745H01L29/1608C01B32/977C04B2235/76C30B23/00C30B28/02C30B29/36
Inventor 安德鲁·R.·霍普金斯阿希什·P.·迪万吉沃尔特·J.·舍伍德道格拉斯·M.·杜克斯
Owner PALLIDUS INC
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