Two dimensional material transverse heterojunction, and preparation and application of the same

Abstract

The invention discloses a preparation method of a two dimensional material transverse heterojunction. The preparation method of a two dimensional material transverse heterojunction includes the following steps: (a), taking material A powder as the original materials, performing vapour deposition on the surface of a substrate, and forming a nanometer sheet of the material A; and (b), heating the powder of the material B1 to the growth temperature under the reverse carrier gas flow, wherein the powder of the material B1 are horizontally growing along the rim of the nanometer sheet of the material A under the positive carrier gas flow, growing in the horizontal direction, and after completion of growing, the reverse carrying gas flow is imported again to prepare a two dimensional material transverse heterojunction A-B1. The invention also provides the two dimensional material transverse heterojunction prepared by the preparation method, and application of the preparation method in preparation of photoelectric devices. The related heterojunction prepared by the preparation method of a two dimensional material transverse heterojunction has the advantages of being smooth in the atomic layer, being steep and flat in the heterojunction boundary line, almost having no doping, and being excellent in optical and electrical properties of the material. The preparation method of a two dimensional material transverse heterojunction greatly simplifies the preparation method of the two dimensional material transverse heterojunction, and controllability of material preparation and the preparation efficiency are greatly improved.

Description

technical field [0001] The invention belongs to the field of nanometer materials, and relates to a preparation method of a two-dimensional material lateral heterojunction and a superlattice thereof. [0002] technical background [0003] In the field of two-dimensional materials, the discovery of graphene in 2004 first triggered a research boom, but due to the special zero-gap energy band structure of graphene, it has been greatly limited in the fields of electronics and optoelectronics, such as graphene field effect transistors. The switching ratio is very small, limiting its use in logic circuits. While B. Radisavljevic et al. use single-layer MoS 2 The prepared field effect transistor has a switch ratio as high as 10 8 , with great application prospects, with single-layer MoS 2 The new two-dimensional materials represented by [1] . [0004] Layered materials such as TMDs have the same layered structure characteristics as graphite. The atoms in the layers are bonded by...

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Problems solved by technology

[0012] In order to overcome the problems of high doping between two heterojunction materials, low production efficiency, and excessively wide interface alloy region in the existing heterojunction preparation methods, the present invention provides a two-dimensional material lateral heterojunction The preparation method aims to improve the existing two-dimensional material heterojunction preparation method, so that the horizontal heterojunction of two-dimensional materials with smoothness at the atomic level, steep boundaries, flatness and low doping can be obtained, and high-efficiency preparation can be achieved. The preparation of two-dimensional superlattice solves the problem that the superlattice cannot be obtained simply by growth

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