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Independently addressable liquid crystal tunable vertical cavity surface emitting laser array and preparation method

A technology of vertical cavity surface emission and laser array, applied in the direction of lasers, laser devices, laser components, etc., can solve the problems of small modulation rate range, high packaging cost, high noise, etc., and achieve the advantages of easy operation and inspection, and cost reduction Effect

Active Publication Date: 2019-10-08
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Usually, discrete single-tube lasers and tunable lasers are used to achieve wavelength tuning. The simplest method is to use discrete single-tube lasers. Each single-tube laser is independent of each other, and the electro-optical interface is convenient for docking, but its packaging cost is relatively high. ; Use tunable lasers, the cost is controllable, but the modulation rate range is small, and the noise is large; and the use of array lasers can make up for the shortcomings of the above two methods, simple packaging, high modulation rate, multi-wavelength lasing, combined with liquid crystal Electronically controlled birefringence for continuously tunable laser wavelength

Method used

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  • Independently addressable liquid crystal tunable vertical cavity surface emitting laser array and preparation method
  • Independently addressable liquid crystal tunable vertical cavity surface emitting laser array and preparation method
  • Independently addressable liquid crystal tunable vertical cavity surface emitting laser array and preparation method

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Embodiment Construction

[0039] Combine below figure 2 -- Figure 13 The preparation method of independently addressable narrow linewidth liquid crystal tunable vertical cavity surface emitting laser array is introduced in detail:

[0040] Step 1. Use metal organic chemical vapor deposition (MOCVD) to alternately grow n-Al on the n-type GaAs substrate 0.12 Ga 0.88 As layer and n-Al 0.9 Ga 0.1 A total of 34 pairs of As layers form the lower DBR; then grow GaAs / Al 0.3 Ga 0.7 As quantum well structure constitutes the active region; then grow Al 0.98 Ga 0.02 The As layer forms an oxidation confinement layer; finally, a heavily doped p-type AlGaAs is grown to form a good ohmic contact with the injection electrode;

[0041] Step 2. Lithographically etch the laser array pattern on the epitaxial wafer grown in step 1. Use a selective etching solution to etch the photoetched epitaxial wafer into a mesa structure, and etch the depth to expose the Al 0.98 Ga 0.02 As oxidation confinement layer sidewal...

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Abstract

The invention discloses an independent addressable liquid-crystal tuning vertical cavity-surface emitting laser array and a preparation method thereof. The independent addressable liquid-crystal tuning vertical cavity-surface emitting laser array comprises a vertical cavity-surface emitting laser half-VCSEL, a liquid crystal layer and an upper DBR. The structure of the array sequentially includes from bottom to top, a laser array back electrode (1), a GaAs substrate (2), a lower DBR (3), an active area (4), an oxidation confined layer (5), a SiO2 passivation layer (6), a laser array injecting electrode (also a liquid-crystal tuning negative electrode) (7), a spacing layer (8), the liquid crystal layer (9), the upper DBR (10), a glass substrate (11), an ITO conductive thin film (12) and a liquid-crystal tuning positive electrode (12). By the adoption of the independent addressable liquid-crystal tuning vertical cavity-surface emitting laser array, the line width of a wavelength tunable vertical cavity-surface emitting laser array is narrowed, at the same time, multi-wavelength laser emitting is achieved, in combination with the birefringence characteristic of liquid crystal, the purpose is achieved that the wavelength is continuous and tunable, and through the independent and addressable characteristics of the laser array electrodes, positioning and individual modulation of single tubes of different wavelengths are achieved.

Description

technical field [0001] The invention relates to the fields of semiconductor lasers and liquid crystal physics, in particular to an independently addressable liquid crystal tuned vertical cavity surface emitting laser array and a preparation method. Background technique [0002] With the rapid development of optical fiber communication technology and optical fiber sensing and other fields, narrow linewidth semiconductor lasers have been more and more widely used. For a light source, its single-mode output stability and line width are two very important indicators. Compared with edge-emitting lasers, vertical cavity surface-emitting lasers (VCSEL) have shorter effective cavity lengths, so VCSELs have larger longitudinal mode spacing and better single longitudinal mode lasing characteristics, but shorter effective cavity lengths It also causes a larger line width of the VCSEL, which reduces the light response sensitivity. [0003] Wavelength tunable VCSEL has a wide range of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183H01S5/40
Inventor 关宝璐李鹏涛赵永东刘储李保志杨嘉炜刘振扬郭燕玲梁津胡丕丽
Owner BEIJING UNIV OF TECH