Independently addressable liquid crystal tunable vertical cavity surface emitting laser array and preparation method
A technology of vertical cavity surface emission and laser array, applied in the direction of lasers, laser devices, laser components, etc., can solve the problems of small modulation rate range, high packaging cost, high noise, etc., and achieve the advantages of easy operation and inspection, and cost reduction Effect
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[0039] Combine below figure 2 -- Figure 13 The preparation method of independently addressable narrow linewidth liquid crystal tunable vertical cavity surface emitting laser array is introduced in detail:
[0040] Step 1. Use metal organic chemical vapor deposition (MOCVD) to alternately grow n-Al on the n-type GaAs substrate 0.12 Ga 0.88 As layer and n-Al 0.9 Ga 0.1 A total of 34 pairs of As layers form the lower DBR; then grow GaAs / Al 0.3 Ga 0.7 As quantum well structure constitutes the active region; then grow Al 0.98 Ga 0.02 The As layer forms an oxidation confinement layer; finally, a heavily doped p-type AlGaAs is grown to form a good ohmic contact with the injection electrode;
[0041] Step 2. Lithographically etch the laser array pattern on the epitaxial wafer grown in step 1. Use a selective etching solution to etch the photoetched epitaxial wafer into a mesa structure, and etch the depth to expose the Al 0.98 Ga 0.02 As oxidation confinement layer sidewal...
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