A light exposure sensor based on reverse series memristor

Abstract

The invention discloses an exposure sensor based on memristors connected in reverse series. The exposure sensor comprises a first power supply V1, a second power supply V2, a switch K, a photoelectric module, a current-limiting module, an memristor module, a difference-acquiring module, an amplifying module, and an increasing module. The first power supply V1 or the second power supply V2 forms a circuit successively with the switch K, the photoelectric module, the current-limiting module and the memristor module. The memristor module includes memristors Mz1, Mz2, Mj1 and Mj2. The Mj1 and the Mj2 are completely the same. The Mz1 and the Mj1 are connected in series. The Mz2 and the Mj2 are connected in series. A series branch formed by the Mz1 and the Mj1 is connected in parallel with a series branch formed by the Mz2 and the Mj2. The difference-acquiring module is connected with the memristor module. The amplifying module is connected to the difference-acquiring module. The increasing module is connected with the amplifying module. The exposure sensor is large in exposure measurement range, high in sensitivity, suitable for the measurement of large exposure and long exposure, and is simple in circuit, avoids an influence of a memristor resistance value change on the loop current and the exposure measurement of the sensor, and is low in measurement error and easy to use.

Description

technical field [0001] The invention belongs to the field of optical measurement, and relates to an exposure sensor, in particular to an exposure sensor based on a reverse series memristor which can prevent the change of the resistance value of the memristor from affecting the loop current. Background technique [0002] The exposure sensor is a sensor that measures the integral value of the illuminance within a certain period of time when an object is irradiated, thereby measuring the exposure. At present, the measurement methods of exposure mainly include: exposure sensor combined with semiconductor photosensitive device and time integration circuit, CCD, CMOS and other photosensitive materials with the number of electronic stacks to record the measurement method of exposure, and based on photoresist etching thickness Exposure measurement, etc. Exposure sensor has been widely used in many fields such as optical imaging, remote sensing detection, medical treatment and semic...

AI Technical Summary

Problems solved by technology

[0003] However, these exposure measurement methods also have some problems, which to some extent hinder the improvement of their performance and the expansion of their application range.

The main problems at present are: first, the sensor combined with the semiconductor photosensitive device and the time integration circuit has a small measurement range, and the method of large capacitance or high voltage cannot effectively improve its measurement range; second, the sensor based on the electronic stack The exposure measurement method is not suitable for the measurement requirements of large exposure and long-time exposure; third, the exposure measurement method based on the etching thickness of photoresist has a huge measurement system, complicated measurement process, inability to measure online, and poor repeatability , and it is easy to introduce measurement error

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