A light exposure sensor based on reverse series memristor

An inverse series, memristor technology, applied in the field of optical measurement, can solve the problems of small measurement range, complex measurement process, hinder the expansion of performance application range, etc., to achieve the effect of reducing volume and increasing sensitivity

An inverse series, memristor technology, applied in the field of optical measurement, can solve the problems of small measurement range, complex measurement process, hinder the expansion of performance application range, etc., to achieve the effect of reducing volume and increasing sensitivity

CN107101718BActive Publication Date: 2018-08-28常州正则高新科技有限公司
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  • A light exposure sensor based on reverse series memristor
  • A light exposure sensor based on reverse series memristor
  • A light exposure sensor based on reverse series memristor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This embodiment provides an exposure sensor based on a reverse series memristor, such as figure 1 , 6 As shown, it includes a first power supply V1, a second power supply V2, a switch K, a photoelectric module, a current limiting module, a memristor module, a difference module, an amplifying module, and an increasing module;

[0035] When the exposure sensor is working, such as figure 2 , the first power supply V1 sequentially forms a circuit with the switch K, the photoelectric module, the current limiting module, and the memristor module;

[0036] When the exposure sensor is in recovery state, such as figure 2 , the second power supply V2 forms a circuit with the switch K, the photoelectric module, the current limiting module, and the memristor module in turn;

[0037]In this embodiment, the first power source V1 and the second power source V2 are switched through single pole double throw switches K1 and K2.

[0038] The memristor module includes a memristor M ...

Embodiment 2

[0045] This embodiment provides a difference module on the basis of Embodiment 1, such as image 3 , including an operational amplifier U1, a resistor R2, a resistor R3, and a resistor R4, the operational amplifier U1 includes an output terminal OUT1, a negative input terminal I1 - , Positive input terminal I1 ﹢ , negative input I1 - Connect to node VX1 through resistor R2, negative input terminal I1 - A node A is drawn between the resistor R2, and the node A is connected to the output terminal OUT1 through the resistor R3, and the positive input terminal I1 ﹢ Two branches are drawn out, one branch is connected to the node VX2 through the resistor R4, and the other branch is connected to the ground through the resistor R5; the operational amplifier U1 also includes a positive power supply VCC1 and a negative power supply VEE1.

[0046] In this embodiment, VCC1 is +12V, and VEE1 is -12V.

Embodiment 3

[0048] This embodiment provides an amplification module on the basis of Embodiment 2, such as Figure 4 , including an operational amplifier U2, a resistor R6, a resistor R7, and a resistor R8, the operational amplifier U2 includes an output terminal OUT2, a negative input terminal I2 - , Positive input terminal I2 ﹢ , negative input I2 - Connect to ground through resistor R7, negative input terminal I2 - A node B is drawn between the resistor R7, and the node B is connected to the output terminal OUT2 through the resistor R8, and the positive input terminal I2 ﹢ The resistor R6 is connected to the output terminal OUT1 of the operational amplifier U1; the operational amplifier U2 also includes a positive power supply VCC2 and a negative power supply VEE2.

[0049] In this embodiment, VCC2 is +12V, and VEE2 is -12V.

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Abstract

The invention discloses an exposure sensor based on memristors connected in reverse series. The exposure sensor comprises a first power supply V1, a second power supply V2, a switch K, a photoelectric module, a current-limiting module, an memristor module, a difference-acquiring module, an amplifying module, and an increasing module. The first power supply V1 or the second power supply V2 forms a circuit successively with the switch K, the photoelectric module, the current-limiting module and the memristor module. The memristor module includes memristors Mz1, Mz2, Mj1 and Mj2. The Mj1 and the Mj2 are completely the same. The Mz1 and the Mj1 are connected in series. The Mz2 and the Mj2 are connected in series. A series branch formed by the Mz1 and the Mj1 is connected in parallel with a series branch formed by the Mz2 and the Mj2. The difference-acquiring module is connected with the memristor module. The amplifying module is connected to the difference-acquiring module. The increasing module is connected with the amplifying module. The exposure sensor is large in exposure measurement range, high in sensitivity, suitable for the measurement of large exposure and long exposure, and is simple in circuit, avoids an influence of a memristor resistance value change on the loop current and the exposure measurement of the sensor, and is low in measurement error and easy to use.

Description

technical field [0001] The invention belongs to the field of optical measurement, and relates to an exposure sensor, in particular to an exposure sensor based on a reverse series memristor which can prevent the change of the resistance value of the memristor from affecting the loop current. Background technique [0002] The exposure sensor is a sensor that measures the integral value of the illuminance within a certain period of time when an object is irradiated, thereby measuring the exposure. At present, the measurement methods of exposure mainly include: exposure sensor combined with semiconductor photosensitive device and time integration circuit, CCD, CMOS and other photosensitive materials with the number of electronic stacks to record the measurement method of exposure, and based on photoresist etching thickness Exposure measurement, etc. Exposure sensor has been widely used in many fields such as optical imaging, remote sensing detection, medical treatment and semic...

Claims

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Application Information

Patent Timeline
28 Aug 2018
Publication
CN107101718B
IPC
G01J1/00
CPC
G01J1/00
Inventors
文常保; 姚世朋