Gold-tin bonding method for patterned surface

Abstract

The present invention provides a gold-tin bonding method for a patterned surface. The method comprises the following steps of S1, stacking up a target substrate and a wafer between the upper and lower heating substrates of a bonding machine, wherein the to-be-bonded surface of the wafer is provided with at least one groove; the to-be-bonded surface of the target substrate is provided with a first bonding material layer used for enabling the gold-tin eutectic bonding operation; the to-be-bonded surface of the wafer is provided with a second bonding material layer used for enabling the gold-tin eutectic bonding operation; in the first and second bonding material layers, the mass ratio of the total tin is larger than 20%; S2, applying a pressure on the wafer and the target substrate by the upper heating substrate and the lower heating substrate, heating the wafer and the target substrate to a preset temperature, and bonding the wafer to the target substrate. According to the technical scheme of the invention, the seamless bonding between the wafer and the target substrate is realized, so that the influence on the subsequent processes is effectively reduced. The photoelectric characteristics of the wafer are improved.

Description

technical field [0001] The invention belongs to the bonding field and relates to a gold-tin bonding method for a patterned surface. Background technique [0002] Metal bonding technology refers to the face-to-face bonding of two chips through pure metals or alloys, relying on metal bonds, diffusion between the metal and the surface of the chip, and metal melting. Metal bonding can replace the epitaxial growth of thick epitaxial thin film materials and directly bond the required epitaxial layer materials or devices to the target substrate, thereby simplifying the device process, reducing costs, and improving the electrical and thermal conductivity of the device. [0003] The key to metal bonding is to select a suitable metal film, that is, the selected metal film should maintain good ohmic contact with the wafer material, a small diffusion coefficient, and a low metal melting point. In the metal bonding of optoelectronic devices, it is sometimes necessary to consider that th...

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Problems solved by technology

[0007] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a gold-tin bonding method for a patterned surface, which is used to solve the problem that it is difficult to seamlessly bond a wafer with a patterned surface to a target substrate in the prior art connection, resulting in adverse effects on subsequent processes and reducing the photoelectric characteristics of the wafer

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