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Temperature gain balancer

A gain equalizer and equalizer technology, applied in the millimeter wave field, can solve problems such as system gain index deterioration, poor temperature characteristics, etc., and achieve the effect of small attenuation, large attenuation, and balanced system gain

Inactive Publication Date: 2017-09-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is that the bad temperature characteristic of the semiconductor device of SiGe BiCMOS process will deteriorate the system gain index

Method used

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Embodiment Construction

[0017] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0018] like figure 1 As shown, the present invention includes an attenuation module (101) and a voltage conversion module (201).

[0019] Wherein the attenuation module (101) is composed of transistors Q1 and Q2 connected in series, and a transistor Q3 connected in parallel to ground. The gate control voltage of the series transistors is Vout1, and the gate control voltage of the parallel transistors is Vout2.

[0020] Wherein the voltage conversion module (201) is composed of a voltage conversion module (201) negatively correlated with temperature and a positively correlated voltage conversion module (301) negatively correlated with temperature. The voltage conversion module (201) outputs two 100uA current branches (Ibias1 and Ibias2). One branch and the resistor R4 form a voltage conversion module (301) that is negatively correlated wit...

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Abstract

The invention discloses a temperature gain balancer applicable to CMOS and BiCMOS technologies. The balancer comprises a voltage transform module and an attenuation module. According to the temperature gain balancer, a resistor of an original attenuation network is replaced by an NMOS transistor, and the transistor is controlled by different gate voltages generated by the voltage transform module. The single balancer is gained by 3dB at the working temperature of -55-125 degrees centigrade in balance. The balancer is good in standing wave and minimum in area. Gain balancing can be carried out on a system on the premise of not influencing the original layout of the system. The scene is applicable to the field of a millimeter wave monolithic integrated circuit and has great application value in military operation and aerospace circuit systems.

Description

technical field [0001] The invention relates to the technical field of millimeter waves, in particular to a temperature gain equalizer based on a SiGe BiCMOS process and capable of adjusting the gain at different temperatures. Background technique [0002] Millimeter waves have wide frequency bands, high precision, high resolution, and large information capacity. With the development of millimeter wave technology, the complexity and cost of the system increase, and the system gradually develops towards monolithic integration. The SiGe BiCMOS process can not only provide high-performance SiGe HBT process for RF and analog, but also provide high-density integrated CMOS process for digital circuit design. Therefore, the millimeter-wave transceiver front-end monolithic integrated circuit based on SiGe BiCMOS process is necessary for the development of millimeter-wave phased array technology. [0003] Compared with GaAs / InP / GaN and other processes, semiconductor devices based o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03G5/16
CPCH03G5/165
Inventor 杨漫菲王磊马凯文陈庆方堃
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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