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A digital wavelength detection integrated circuit based on bdj

A technology of integrated circuits and wavelengths, applied in measurement circuits, measurement devices, photometry, etc., can solve problems such as poor reliability, complex circuits, and large volume, and achieve the effect of realizing intelligence, simplification, and miniaturization.

Active Publication Date: 2018-08-21
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the commercialized discrete BDJ wavelength detector has been widely used, and the related signal processing circuit is built with discrete components, which has the disadvantages of complex circuit, large volume, low detection sensitivity and poor reliability especially for weak signals

Method used

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  • A digital wavelength detection integrated circuit based on bdj
  • A digital wavelength detection integrated circuit based on bdj
  • A digital wavelength detection integrated circuit based on bdj

Examples

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Embodiment Construction

[0029] Further illustrate the present invention below in conjunction with accompanying drawing.

[0030] The PMOS transistors P0, P1, P2 and NMOS transistor N0 in the photocurrent extraction circuit 1 provide suitable voltage bias for the anode of the shallow diode D1 in the BDJ and the PMOS transistor P3, and the PMOS transistor P3 provides the photocurrent I1 of the shallow diode D1 current path and extract current;

[0031] The PMOS transistors P4, P5 and NMOS transistor N1 in the photocurrent extraction circuit 2 provide suitable bias voltage for the cathodes of the shallow diode D1 and the deep diode D2 in the BDJ, so that the shallow diode D1 and the deep diode D2 work in the reverse bias state , P4, P5, and N1 also provide a suitable bias point for the NMOS transistor N2. The NMOS transistor N2 provides a current path for the sum of the photocurrent I1+I2 of the shallow diode D1 and the deep diode D2 and extracts the current. The PMOS transistors P6 and P7 , P8, and P9...

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Abstract

The invention relates to a BDJ-based digital wavelength detection integrated circuit comprising a photoelectric current extraction circuit I, a photoelectric current extraction circuit II, a current branch selection circuit, a current output amplifier circuit, a current and voltage conversion circuit, a voltage comparison circuit I, a voltage comparison circuit II, and an SR latching device. A buried CMOS dual-PN-junction photodiode includes two PN junctions with two different depth positions, wherein the two PN junctions share one N junction; and thus the photodiode is formed by a shallow PN-junction diode D1 and a deep PN-junction diode D2, wherein the D1 and the D2 are connected in a common-cathode manner. An anode of the deep PN-junction diode D2 is grounded to output a photoelectric current I2; an anode of the shallow PN-junction diode D1 outputs a photoelectric current I1; and the sum of the photoelectric currents, outputted by the cathodes of the D1 and D2, of the two PN junctions is I1+I2. An input terminal 1a of the photoelectric current extraction circuit I is connected with the anode of the shallow PN-junction diode D1 and an output terminal is connected with a first input terminal of the current branch selection circuit.

Description

technical field [0001] The digital wavelength detection integrated circuit involved in the present invention can be used as a signal processing circuit for burying a CMOS double PN junction photodiode (BDJ) sensing unit, and can be monolithically integrated with the sensing unit BDJ to realize the miniaturization of the wavelength detection function, Portable. The detection circuit can be directly connected with processors such as single-chip microcomputers and computers to realize intelligent and automatic wavelength detection. Background technique [0002] Buried CMOS dual PN junction photodiodes, consisting of two vertically stacked diodes of different depths. The stacked structure of this device makes the transmission depth of light in the silicon crystal strongly dependent on the wavelength when the silicon material is used as a filter, and the photocurrent ratio of the two PN junctions has a good monotonically increasing relationship with the wavelength. Therefore, i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/44
CPCG01J1/44G01J2001/4406G01J2001/446
Inventor 吴柯柯施朝霞
Owner ZHEJIANG UNIV OF TECH