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Terahertz wave detector, and preparation method of the same

A terahertz and detector technology, applied in the field of detectors, can solve the problems of poor sensitivity, low temperature operation, low device responsivity, etc., to achieve excellent mechanical properties and electrical properties, and improve the effect of mechanical strength

Active Publication Date: 2017-09-15
SUZHOU UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Since the radiation power of current terahertz light sources is generally relatively low, the existing terahertz wave detectors generally have slow response speed (pyroelectric detector), narrow detection frequency (Schottky diode), and poor sensitivity (Golay cell detector) and the need for low-temperature operation (bolometer), so it is particularly important to develop a terahertz wave detector with high speed, high sensitivity, high signal-to-noise and work at room temperature
[0006] In the previous detectors, the tripole coupled antenna is integrated with the HEMT device as the source, drain and gate electrodes at the same time. The grid antenna and the source antenna are in the same plane, and the metal grid generates a transverse electric field at 2 DEG below the grid. A large shielding effect is achieved, resulting in low coupling efficiency of the antenna and low device responsivity

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0057] A preparation method of a terahertz wave detector, comprising the following steps:

[0058](1) Under nitrogen protection, mix ammonium hexachloroiridate, dioctyltin, aluminum nitrate nonahydrate, ethanol and propionic acid; then reflux and stir for 5 minutes, then add potassium hydroxide methanol solution and tert-butyl peroxybenzoate; After reacting for 10 minutes, cool down to room temperature naturally, add ethyl acetate, coagulate and centrifuge; wash the centrifuged precipitate with water and disperse in ethanol to obtain a dispersion system; then add manganese acetate, cobalt nitrate, water, stir for 10 minutes, add samarium, stir 1 hour, obtain the support layer precursor;

[0059] (2) Add polyvinyl alcohol, hydrogen peroxide, and iron tetraphenylporphyrin to the dispersion system, stir at 50°C for 1 hour, then add 4,4-diaminophenylmethane and ethyl orthosilicate, and stir under reflux for 10 minutes. Then concentrated to obtain a concentrate with a solid conten...

Embodiment 2

[0068] A preparation method of a terahertz wave detector, comprising the following steps:

[0069] (1) Under nitrogen protection, mix ammonium hexachloroiridate, dioctyltin, aluminum nitrate nonahydrate, ethanol and propionic acid; then reflux and stir for 5 minutes, then add potassium hydroxide methanol solution and tert-butyl peroxybenzoate; After reacting for 10 minutes, cool down to room temperature naturally, add ethyl acetate, coagulate and centrifuge; wash the centrifuged precipitate with water and disperse in ethanol to obtain a dispersion system; then add manganese acetate, cobalt nitrate, water, stir for 10 minutes, add samarium, stir 1 hour, obtain the support layer precursor;

[0070] (2) Add polyvinyl alcohol, hydrogen peroxide, and iron tetraphenylporphyrin to the dispersion system, stir at 50°C for 1 hour, then add 4,4-diaminophenylmethane and ethyl orthosilicate, and stir under reflux for 10 minutes. Then concentrated to obtain a concentrate with a solid conte...

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PUM

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Abstract

The invention belongs to the technical field of detector, and specifically relates to a terahertz wave detector, and a preparation method of the same. The preparation method of the terahertz wave detector includes the steps: taking an aluminum gallium nitride / gallium nitrogen high electron mobility field effect transistor (HEMT) as the basic structure, and utilizing the epitaxy to prepare a aluminum gallium nitride / gallium nitrogen layer through substrate design; and then preparing an active area table top, a gate medium, an ohmic contact window, and an electrode. The two dimensional electron gas in the obtained field effect transistor has higher electron concentration and mobility; and a wave spectrum detection apparatus which can realize detection of THz wave in the condition, with high speed, high sensitivity and high signal to noise ratio, can be obtained; and finally, detection of the terahertz wave can be realized.

Description

technical field [0001] The invention belongs to the technical field of detectors, and in particular relates to a terahertz wave detector and a preparation method thereof. Background technique [0002] Terahertz (THz) radiation is a general term for electromagnetic radiation of a specific band, usually referring to electromagnetic waves with a frequency in the range of 0.1THz~10THz (wavelength 3mm~30um), which is located in the microwave and infrared radiation in the electromagnetic spectrum. between. In the field of electronics, electromagnetic waves in this band are also called millimeter waves and submillimeter waves; in the field of spectroscopy, it is also called far-infrared rays. [0003] The reason why terahertz radiation arouses our strong interest is that it has many unique properties and broad application prospects. The terahertz wave radiation source has the characteristics of broadband, perspective, and safety, so it has important application prospects in basic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/113
CPCH01L31/1136H01L31/1848Y02P70/50
Inventor 孙云飞班建民罗恒田学农
Owner SUZHOU UNIV OF SCI & TECH
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