Preparation method of [Beta]-Ga2O3 nano array

A nanoarray, gallium oxide technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of high dark current, long response time, poor performance, etc., and achieve easy promotion and preparation. Simple and cheap method

Active Publication Date: 2017-09-19
HARBIN INST OF TECH
View PDF5 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the current methods for obtaining nanomaterials of β-gallium oxide have the following problems: (1) Synthesis and characterization of gallium oxide nanowires via a hydrothermal method, Materials Chemistry and Physics, 121:142–146 (2010) using hydrothermal method to add Surfactants prepare nano-gallium oxides with different shapes, and the prepared gallium oxides are chaotic and cannot form regular arrays, which leads to difficulties in preparing devices, poor performance, high dark current, long response time, and unstable properties. Difficult to repeat and cannot meet the needs of practical applications
(2) Perovskite Nanoparticle-Sensitized Ga 2 o 3 Nanorod Arrays for CODetection at High Temperature, ACS Applied Materials& Interfaces 8: 8880−8887(2016) Preparation of SnO by Magnetron Sputtering 2 seed layer, then the SnO 2 GaOOH was obtained by hydrothermal growth, and then annealed to obtain β-Ga 2 o 3 Nanoarrays, the preparation method is complicated, the cost is high, it is not conducive to the application and promotion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of [Beta]-Ga2O3 nano array
  • Preparation method of [Beta]-Ga2O3 nano array
  • Preparation method of [Beta]-Ga2O3 nano array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] This embodiment prepares β-gallium oxide nanoarrays according to the following steps:

[0024] 1. Preparation of GaOOH seed layer by water bath method:

[0025] (1) Configure gallium nitrate (Ga(NO 3 ) 3 ) and hexamethylenetetramine (HMT), the concentration of gallium nitrate is controlled to be 0.5mol / L, the concentration of HMT is 1mol / L, and the volume of the mixed solution is 30mL;

[0026] (2) Place the quartz substrate growth side down in a 50mL beaker filled with the above mixed solution for growth, control the water bath temperature to 90°C, and grow for 8 hours;

[0027] (3) Take it out after natural cooling, rinse with deionized water, and dry to obtain a GaOOH seed layer. Such as figure 1 As shown, the GaOOH seed layer is granular and densely arranged.

[0028] 2. Preparation of GaOOH nanoarrays by hydrothermal method:

[0029] (1) Configure Ga(NO 3 ) 3 With the mixed solution of HMT, the concentration of gallium nitrate is controlled to be 0.06mol / L,...

Embodiment 2

[0034] This embodiment prepares β-gallium oxide nanoarrays according to the following steps:

[0035] 1. Preparation of GaOOH seed layer by water bath method:

[0036] (1) Configure gallium nitrate (Ga(NO 3 ) 3 ) and hexamethylenetetramine (HMT), control the concentration of gallium nitrate to 0.4mol / L, the concentration of HMT to 0.5mol / L, and the volume of the mixed solution to 30mL;

[0037] (2) C-Al 2 o 3 Place the substrate growth side down in a 50mL beaker filled with the above mixed solution for growth, control the temperature of the water bath at 85°C, and grow for 6 hours;

[0038] (3) Take it out after natural cooling, rinse with deionized water, and dry to get the following figure 1 The GaOOH seed layer is shown.

[0039] 2. Preparation of GaOOH nanoarrays by hydrothermal method:

[0040] (1) Configure Ga(NO 3 ) 3 With the mixed solution of HMT, the concentration of gallium nitrate is controlled to be 0.1mol / L, the concentration of HMT is 0.1mol / L, and the ...

Embodiment 3

[0045] This embodiment prepares β-gallium oxide nanoarrays according to the following steps:

[0046] 1. Preparation of GaOOH seed layer by water bath method:

[0047] (1) Configure gallium nitrate (Ga(NO 3 ) 3 ) and hexamethylenetetramine (HMT), control the concentration of gallium nitrate to 0.2mol / L, the concentration of HMT to 0.6mol / L, and the volume of the mixed solution to 30mL;

[0048] (2) Place the FTO substrate growth side down in a 50mL beaker filled with the above mixed solution for growth, control the water bath temperature to 95°C, and grow for 8 hours;

[0049] (3) Take it out after natural cooling, rinse with deionized water, and dry to get the following figure 1 The GaOOH seed layer is shown.

[0050] 2. Preparation of GaOOH nanoarrays by hydrothermal method:

[0051] (1) Configure Ga(NO 3 ) 3 With the mixed solution of HMT, the concentration of gallium nitrate is controlled to be 0.05mol / L, the concentration of HMT is 0.3mol / L, and the volume of mixed...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
Login to view more

Abstract

The present invention discloses a preparation method of a [Beta]-Ga2O3 nano array. The method comprises: employing a water bath method to prepare a GaOOH seed layer, employing a hydro-thermal method to prepare a GaOOH nano array on the seed layer, and finally obtaining a [Beta]-Ga2O3 nano array through thermal annealing. The preparation method of the [Beta]-Ga2O3 nano array is a green chemistry method and employs the chemical method seed layer and the nano array, the array is neatly arranged, the dimension is uniform, the preparation method is simple and low in cost and easy to popularize so as to facilitate large-scale preparation, the GaOOH seed layer is prepared, and a substrate is not limited and can be quartz, silicon, a transparent conductive substrate (ITO or FTO), sapphire (C-AL2O3) and the like so as to facilitate different applications.

Description

technical field [0001] The present invention relates to a kind of β-Ga 2 o 3 Preparation method of nanoarray. Background technique [0002] β-Ga 2 o 3 The bandgap of β-Ga is 4.9 eV, and it is often used as a power device. Since the bandgap is located in the solar-blind ultraviolet band, the application in the field of photoelectric detection has also received extensive attention, especially the one-dimensional β-Ga 2 o 3 Nanoarrays have the advantages of high crystal quality and high carrier transport rate, and are excellent ultraviolet detection materials. [0003] However, the current methods for obtaining nanomaterials of β-gallium oxide have the following problems: (1) Synthesis and characterization of gallium oxide nanowires via a hydrothermal method, Materials Chemistry and Physics, 121:142–146 (2010) using hydrothermal method to add Surfactants prepare nano-gallium oxides with different shapes, and the prepared gallium oxides are chaotic and cannot form regular ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L31/0296
Inventor 矫淑杰刘超越廖奕凯
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap