Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of film tearing method for preparing conductive grid wire of hit solar cell

A solar cell and conductive grid technology, applied in the field of solar cells, can solve problems affecting the production yield and preparation quality of solar cells, and affect the exposure pattern on the surface of silicon wafers, so as to improve photoelectric conversion efficiency and production yield, and be easy to tear Film, easy to tear effect

Active Publication Date: 2019-07-05
GOLD STONE (FUJIAN) ENERGY CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above problems, the present invention provides a film tearing method for preparing the conductive grid lines of HIT solar cells, which solves the problem that the unexposed photosensitive film is cut into a jagged shape. Cracks are generated and extended to the surface of the silicon wafer, thereby affecting the exposure pattern of the silicon wafer surface, affecting the production yield and preparation quality of solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of film tearing method for preparing conductive grid wire of hit solar cell
  • A kind of film tearing method for preparing conductive grid wire of hit solar cell
  • A kind of film tearing method for preparing conductive grid wire of hit solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0022] like Figure 4-6 As shown, a photosensitive film 303 is pasted on the upper surface and the lower surface of the silicon wafer 301, and a protective film 302 is arranged on the photosensitive film 303; Extend a section of buffer zone, and the rest are non-buffer zones; expose the exposure area and non-buffer zone of the photosensitive film 303 corresponding to the size of the silicon wafer 301; cut off a section of the area outside the buffer zone; tear off the photosensitive The protective film 302 on the surface of the film 303 .

[0023] like Figure 5 As shown, the exposure area is the area shown by K11 and K22, the buffer area is the area shown by K5 and K6, and the non-buffer area is the area where K5 and K6 extend outward. Figure 5 The middle K7 and K8 areas are cropping areas. The above-mentioned toughness of the photosensitive film 303 after exposure becomes smaller, and the adhesive force between the photosensitive film 303 and the protective film 302 afte...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a film tearing method for the preparation of an HIT solar cell conductive grid line, and the method comprises the following steps: pasting light-sensing films on the upper and lower surfaces of a silicon chip, wherein the light-sensing films are provided with protection films, parts, making contact with the silicon chip, of the light-sensing films are exposure regions which are provided with buffering regions in an outwards extending manner, and the other regions are non-buffering regions; carrying out the exposing of the exposure regions and the non-buffering regions of the light-sensing films of the regions corresponding to the size of the silicon chip; cutting the region outside the buffering regions; and tearing the protection films on the surfaces of the light-sensing films. According to the invention, the toughness of the light-sensing films is weakened, and the adhesive power between the exposed light-sensing films and the protection films is also weakened, thereby facilitating the tearing of the films. The protection films are very easy to tear. The light-sensing films in non-exposed regions of the buffering regions are good in toughness, and are not easy to tear, thereby enabling the cut places of the exposed light-sensing films to be easier to tear. Moreover, no crack is caused by the zigzag shape of a notch and extends to the surface of the silicon chip, and no impact on an exposure graphic is generated.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a film tearing method for preparing conductive grid lines of HIT solar cells. Background technique [0002] HIT solar cell is a hybrid solar cell made of crystalline silicon substrate and amorphous silicon thin film. Compared with traditional single / polycrystalline silicon cells, it has higher power generation efficiency, better stability and lower cost. [0003] The high-conductivity grid line preparation process of HIT solar cells includes: film attachment, exposure and development, and metal grid formation. When the film is attached, there is a protective film on the surface of the photosensitive film of the silicon wafer, which needs to be torn off after exposure and before development. like figure 1 As shown, the traditional silicon wafer film attachment method is to attach a photosensitive film 203 with a layer of protective film 202 on the upper surface and lower surface of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCH01L31/0224H01L31/022425H01L31/18Y02E10/50Y02P70/50
Inventor 倪鹏玉王树林游文诚李德辉张明全
Owner GOLD STONE (FUJIAN) ENERGY CO LTD