Antiferroelectric ceramic/pvdf 0-3 structure composite material and its heat treatment preparation method
A composite material and composite film technology, applied in the field of antiferroelectric ceramic/PVDF0-3 structural composite material and its preparation, can solve the problems of increased dielectric loss, easy heating of capacitors, surface mismatch, etc., and achieve dielectric loss Small, small remanent polarization, reducing the effect of remanent polarization
Active Publication Date: 2019-03-29
HANGZHOU DIANZI UNIV
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Problems solved by technology
However, the presence of filler particles can easily lead to problems such as air gaps, holes, and surface mismatches, which can lead to increased dielectric loss and easy heating of capacitors.
Method used
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[0027] Below in conjunction with embodiment and accompanying drawing, the present invention is further described, but the present invention is by no means limited to the embodiment of introduction.
[0028] refer to figure 1 , in the composite material of 0-3 structure described in the present invention, matrix material selects polymers such as PVDF and PVDF-based P (VDF-CTFE), P (VDF-TrFE) and P (VDF-CTFE-TrFE), fill The particle selective antiferroelectric ceramics include one of the antiferroelectric materials of PbZrO3, PbZrTiO3, La-doped PLZT, PZST and La-doped PLZST systems. The composition of the composite can be adjusted by adding a certain amount of polymer matrix.
[0029] The specific processes for preparing and processing the above-mentioned composite materials include:
[0030] 1. Add a certain amount of PVDF-based polymer into the polar solution, stir well until it is completely dissolved and set to volume.
[0031] 2. Add the antiferroelectric ceramic powder ...
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Abstract
The invention relates to an antiferroelectric ceramic / PVDF0-3 structure composite material and a thermal treatment preparation method thereof. The antiferroelectric ceramic / PVDF0-3 structure composite material is prepared from antiferroelectric ceramic powder and a PVDF-based polymer, wherein the antiferroelectric ceramic powder is uniformly distributed in a polymer matrix as added particles to prepare a composite material film through a tape casting method; and quenching heat treatment is carried out on the composite material film, wherein the obtained film is 1-100 microns in thickness and the volume fraction of antiferroelectric ceramic particles in the composite material is 0-70%. According to the 0-3 composite material prepared from the antiferroelectric ceramic particles as filling particles, the electric displacement value and the breakdown electric field value of the composite material can be effectively improved, residual polarization can be reduced and the loss can be reduced, so that improvement of an energy storage value and an energy release value of the composite material is facilitated and the energy storage and release efficiency is improved.
Description
technical field [0001] The invention belongs to the field of electronic material preparation, and relates to an antiferroelectric ceramic / PVDFO-3 structure composite material and a preparation method thereof. Background technique [0002] A capacitor is a component that can store electric charge and is one of the most commonly used electronic components. A film capacitor is a capacitor with a cylindrical structure in which metal is used as an electrode, and plastic film is overlapped from both ends. Film capacitors are excellent capacitors due to their many excellent characteristics. Its main characteristics are as follows: non-polarity, high insulation resistance, excellent frequency characteristics (broad frequency response), and low dielectric loss. Based on the above advantages, film capacitors are widely used in circuits. It is mainly used in many industries such as electronics, home appliances, communications, electric power, electrified railways, hybrid vehicles, a...
Claims
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IPC IPC(8): C08L27/16C08K3/24C08J5/18C08J7/00
CPCC08J5/18C08J7/08C08J2327/16C08K3/24C08L2203/16C08L27/16
Inventor 李丽丽汶飞徐卓刘晓阳王高峰叶剑飞吴薇
Owner HANGZHOU DIANZI UNIV