Novel hexagonal opening-closing shell-type electrode semiconductor detector

A semiconductor and hexagonal technology, used in semiconductor devices, circuits, electrical components, etc., can solve problems affecting detection efficiency, and achieve the effects of high detection efficiency, sensitive response, and optimized structure type

Inactive Publication Date: 2017-09-29
XIANGTAN UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Secondly, the "three-dimensional trench electrode semiconductor detector" can only be etched on one side
Finally, when this detector is working, the particles can only be incident on one side, which affects the detection efficiency

Method used

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  • Novel hexagonal opening-closing shell-type electrode semiconductor detector
  • Novel hexagonal opening-closing shell-type electrode semiconductor detector
  • Novel hexagonal opening-closing shell-type electrode semiconductor detector

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Embodiment Construction

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0026] Such as Figure 1-5 As shown, a novel hexagonal open-close type shell-type electrode semiconductor detector has a hexagonal prism semiconductor substrate (1), and the groove electrode (2) and the central columnar electrode (3) are passed through by the semiconductor substrate (1). Formed by etching and diffusion doping, the central columnar electrode (3) is located in the middle of the trench electrode (2), and the trench electrode (2) surrounds the cen...

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Abstract

A novel hexagonal opening-closing shell-type electrode semiconductor detector comprises a hexagonal prism type semiconductor substrate. A central cylindrical electrode is right in the middle of a trench electrode. The trench electrode is a hexagonal frame type hollow electrode. The trench electrode is etched into two sections which are of the same structure and mutually complementary in structure. Sloping grain-shaped entity gaps are arranged right in the middle of a pair of parallel sides of the trench electrode. The trench electrode and the central cylindrical electrode on the top of the novel hexagonal opening-closing shell-type electrode semiconductor detector are covered with an electrode contact layer. The other semiconductor part on the top is covered with a silicon dioxide insulation layer. A silicon dioxide substrate layer is arranged on the bottom. The parts, not etched into an electrode, of the trench electrode form the sloping grain-shaped entity gaps. According to the novel hexagonal opening-closing shell-type electrode semiconductor detector, a circle is made with the vertex of the trench electrode as the center and the width of the sloping grain-shaped entity gaps as the radius on the basis of a sloping grain-shaped semiconductor substrate, the semiconductor matrix outside the arc is etched into an electrode, and the sloping grain-shaped semiconductor substrate is left. Thus, the performance of the detector is improved.

Description

technical field [0001] The patent of the invention belongs to the technical fields of high-energy physics, astrophysics, aerospace, military affairs, medicine, etc., and relates to a novel hexagonal open-close type shell-type electrode semiconductor detector. Background technique [0002] Detectors are mainly used in high-energy physics, astrophysics, etc. Semiconductor detectors have high detection sensitivity, fast response speed, strong radiation resistance, and are easy to integrate. They have important application value in the fields of high-energy particle detection and X-ray detection. . However, the traditional "three-dimensional semiconductor detector" has many shortcomings. In high-energy physics and astrophysics, the detector works under strong irradiation conditions, which has high requirements for the detector's energy resolution, response speed, etc., and requires strong Excellent radiation resistance, low leakage current and low full depletion voltage have di...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/0352H01L31/117
CPCH01L31/117H01L31/022408H01L31/022416H01L31/035281
Inventor 李正刘曼文
Owner XIANGTAN UNIV
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