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3.7-4.2-micron all-solid-state laser orientated intermediate infrared holmium-neodymium dual-doped laser crystal

A technology of laser crystals and lasers, which is applied to lasers, laser components, phonon exciters, etc., can solve the problems of low laser output energy, low efficiency, and complex systems, and achieve the effect of improving laser output efficiency

Active Publication Date: 2017-10-03
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is still such a problem: the pump source is limited to 889nm Cr 3+ : LiSAF pulsed laser, complex system, poor stability, low laser output energy, low efficiency, etc.
At present, there are no relevant reports on the use of holmium and neodymium double-doped crystals as 3.7-4.2 micron mid-infrared laser crystals at home and abroad

Method used

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  • 3.7-4.2-micron all-solid-state laser orientated intermediate infrared holmium-neodymium dual-doped laser crystal
  • 3.7-4.2-micron all-solid-state laser orientated intermediate infrared holmium-neodymium dual-doped laser crystal
  • 3.7-4.2-micron all-solid-state laser orientated intermediate infrared holmium-neodymium dual-doped laser crystal

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Embodiment 1

[0023] This embodiment discloses a mid-infrared holmium-neodymium double-doped laser crystal for 3.7-4.2 micron all-solid-state lasers, wherein trivalent holmium ions (Ho 3+ ) As an active ion, it can emit fluorescence at 3.7-4.2 microns, and the corresponding energy level transition is Ho 3+ : 5 I 5 → 5 I 6 ; Trivalent neodymium ions (Nd 3+ ) has dual functions, it can be used as a sensitizing ion for trivalent holmium ions, and can also be used as a deactivation ion for trivalent holmium ions, such as figure 1 Shown: Under the pumping of a well-developed semiconductor laser (LD), the central wavelength range is: 780-830nm (that is, a semiconductor laser with a pump source of 780-830nm), Nd 3+ effectively absorb energy, and then, assisted by the phonon energy of the matrix material, occurs from the Nd 3+ : 4 f 3 / 2 to Ho 3+ : 5 I 5 The energy transfer of the energy transfer to Ho 3+ ions, achieving Nd 3+ The sensitization function of ions makes the crystal suitabl...

Embodiment 2

[0028] Select the raw material PbF that purity is greater than 99.99% in the present embodiment 2 , NdF 3 and HoF 3 , using the crucible drop method for crystal growth, successfully grown holmium and neodymium co-doped lead fluoride mid-infrared laser crystals, in which trivalent holmium ions (Ho 3+ ) with a doping concentration of 2mol%, trivalent neodymium ions (Nd 3+ ) with a doping concentration of 2 mol%. After successfully growing the crystal, the processing size is 8×8×1mm 3 Spectrum test of the sample, under 808nm LD excitation, the mid-infrared fluorescence emission spectrum curve of 3.7-4.2 microns was successfully tested, and the results are as follows figure 2 As shown, the sensitization effect of neodymium ions on holmium ions is proved. At the same time, a lead fluoride crystal doped with holmium ions was successfully grown by using the crucible drop method, in which the doping concentration of holmium ions was 2 mol%, and the spectral performance was also ...

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Abstract

The invention discloses 3.7-4.2-micron all-solid-state laser orientated intermediate infrared holmium-neodymium dual-doped laser crystal, and relates to the field of an intermediate infrared laser gain material. In the laser crystal, trivalent holmium ions are used as active ions, and the corresponding energy level transition is Ho3<+>: 5I5-5I6; the trivalent neodymium ions have dual functions, which can be used as the trivalent holmium ion sensitized ions to enable the crystal to be suitable for commercial and high-power LED pumping on one hand; on the other hand, the trivalent holmium ions also can be used as de-activation ions of the trivalent holmium ions to greatly shorten the energy level service life of the lower laser energy level 5I6 of the trivalent holmium ions; meanwhile, the energy level service life of the upper laser energy level 5I5 of the trivalent holmium ions is not changed obviously, so that population inversion can be realized, effective laser output is achieved, and the laser threshold value can be lowered and laser efficiency can be improved; and the laser crystal can be used for 3.7-4.2-micron laser output and has the significant application prospects in the fields of medical treatment, scientific research, military affairs and the like.

Description

technical field [0001] The invention relates to the technical field of laser crystal gain materials, in particular to a mid-infrared holmium-neodymium double-doped laser crystal for 3.7-4.2 micron all-solid-state lasers. Background technique [0002] Lasers in the 3.7-4.2 micron band have broad application prospects in civil and military fields such as air pollution monitoring, sensing, medical treatment, ocean detection, engineering control, spectroscopy, remote sensing, lidar, and photoelectric countermeasures. Among many rare earth ions, Ho 3+ Ions are one of the effective rare earth ions to achieve laser output in the 3-5 micron band, among which 5 I 5 → 5 I 6 The energy level transition can produce laser light in the 3.7-4.2 micron band. [0003] Abroad, in 2004, Stutz et al. in Ho:BaY 2 f 8 (BYF) crystal to obtain 3.9 micron pulsed laser output, the pumping light is 889nm Cr 3+ :LiSAF pulsed laser, when the doping concentration of Ho:BYF is 30%, using bidirecti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/16
CPCH01S3/161H01S3/1611
Inventor 张沛雄陈振强杭寅李真尹浩朱思祁
Owner JINAN UNIVERSITY
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