Device manufacturing method
一种器件制造方法、电子器件的技术，应用在器件制造领域，能够解决生产线庞大等问题
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no. 1 approach
[0034] Below, refer to Figures 1 to 4B A first embodiment of the substrate processing apparatus of the present invention will be described. figure 1 The schematic overall structure of the substrate processing apparatus is shown. In this embodiment, the flexible substrate P supplied from the supply roll FR1 is typically sequentially transported to the four processing units U1, U2, U3, and U4, and then the recovery roll is used. The FR2 is wound, and while the substrate P is transported from the supply roll RF1 to the recovery roll RF2, a fine pattern made of a functional material is precisely formed on the substrate P.
[0035] The processing unit (functional layer forming part) U1 is equipped with, for example, a transfer roller Gpa for printing, etc., and the photosensitive lyophilic coupling agent, such as a silane coupling agent containing a lyophobic fluorine group in a nitrobenzyl group, is uniformly Apply to at least the entire pattern formation area of the surface o...
no. 2 approach
[0058] Next, refer to Figure 5 A device manufacturing system embodying the above-mentioned substrate processing apparatus will be described. Figure 5It is a diagram showing a partial configuration of a device manufacturing system (flexible display production line). An example is shown in which the flexible substrate P (sheet, film, etc.) pulled out from the supply roll FR1 passes through n processing units U1, U2, U3, U4, U5, ..., Un in sequence until it is wound up on the recovery roll FR2 . The upper-level control device 5 collectively controls each processing device U1 to Un constituting the production line.
[0059] exist Figure 5 , the orthogonal coordinate system XYZ is set so that the front (or back) of the substrate P is perpendicular to the XZ plane, and the width direction perpendicular to the conveyance direction (longitudinal direction) of the substrate P is set as the Y direction. In addition, the substrate P may be subjected to predetermined pretreatment a...
no. 3 approach
[0071] exist Figure 5 In the treatment device U4 for spray deposition shown in , it is preferable to satisfy the above-mentioned relation I or relation II, and the spray concentration, gas flow rate, temperature, substrate P transport speed, etc. in the reaction chamber TC are preset as adjustment parameters. This is for controlling the film thickness and density of the raw material substance deposited in the highly lyophilic region HPR on the substrate P. FIG. Furthermore, it is also useful to provide a function of measuring the film thickness of the raw material material deposited in the highly lyophilic region HPR, and dynamically change the treatment time and conditions (adjustment parameters) of the spray deposition based on the measured value.
[0072] Image 6 expressed in Figure 5 An example of the function of measuring the thickness of the deposited pattern is provided in the processing device U4 for spray deposition shown, and has the same Figure 5 Components w...
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