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A b-doped SIC nanobelt large gauge factor high-sensitivity pressure sensor and preparation method thereof

A pressure sensor and gauge factor technology, applied in the field of sensors, can solve problems such as small gauge factor, achieve large gauge factor, achieve precise control, and excellent high temperature resistance

Active Publication Date: 2020-05-22
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared to the gauge factor of about 5000 that Si nanowires have, the above-mentioned SiC nanomaterials have a small gauge factor, and how to obtain atom-doped SiC nanostructures with a larger gauge factor remains to be studied.
There is no research report on the piezoresistive properties of B-doped SiC nanoribbons

Method used

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  • A b-doped SIC nanobelt large gauge factor high-sensitivity pressure sensor and preparation method thereof
  • A b-doped SIC nanobelt large gauge factor high-sensitivity pressure sensor and preparation method thereof
  • A b-doped SIC nanobelt large gauge factor high-sensitivity pressure sensor and preparation method thereof

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Embodiment 1

[0036] The organic precursor polysilazane is thermally cross-linked and cured and put into a nylon resin ball mill tank, and the ball mill is pulverized into polysilazane powder. The process of thermal cross-linking and curing is to put the polysilazane under the protection of Ar atmosphere at 260 ℃ for 30min. Weigh 300mg of polysilazane powder and 60mg of B 2 o 3 After the powder is mixed evenly, it is placed at the bottom of the graphite crucible, and a piece of 5×5 cm (length×width) carbon paper is placed on the top of the crucible as a substrate, and the crucible and the carbon paper substrate are placed together in a graphite resistance atmosphere sintering furnace. The graphite resistance atmosphere sintering furnace is first vacuumed to 10 -4 Pa, and then filled with Ar gas (99.99% purity), until the pressure is one atmosphere (~0.11Mpa), after which the pressure is constant. Then carry out the temperature program, first rapidly increase the temperature from room tem...

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Abstract

The invention relates to a B-doped SiC nanobelt large strain coefficient high sensitivity pressure sensor and a making method thereof and belongs to the technical field of a sensor. The pressure sensor comprises an atomic force microscope probe, a graphite substrate and a B-doped SiC nanobelt loaded on the graphite substrate, wherein the B-doped SiC nanobelt is the function unit. The pressure sensor is advantaged in that properties of high temperature resistance, high strain coefficient and high sensitivity are realized, and the pressure sensor can be utilized under the extreme condition.

Description

technical field [0001] The invention belongs to the technical field of sensors, and relates to a B-doped SiC nanobelt large gauge coefficient high-sensitivity pressure sensor and a preparation method thereof. Background technique [0002] Due to its advantages of small size, low energy consumption, and high sensitivity, pressure sensors have attracted extensive attention in the field of control and detection. With the development of science and technology and the progress of production, people are increasingly demanding high-quality pressure sensors with high sensitivity and resistance to extreme environments, such as pressure sensors suitable for use in harsh environments such as high temperature, high frequency, and high radiation. At present, the pressure sensors used at home and abroad mostly use silicon materials, but silicon material pressure sensors are difficult to use in harsh environments, especially high temperature environments (>250°C). [0003] Due to their...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/18G01L9/06C01B32/977B82Y40/00
CPCB82Y40/00C01P2002/70C01P2004/03C01P2004/17C01P2006/40G01L1/18G01L9/06
Inventor 高凤梅李笑笑陈善亮王霖杨为佑
Owner NINGBO UNIVERSITY OF TECHNOLOGY