Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Sliver alloy wire used for semiconductor packaging and preparation method thereof

A silver alloy and semiconductor technology, which is applied to the field of silver alloy wire for semiconductor packaging and its preparation, can solve the problems of short life, easy chip damage, and copper stability is not as good as gold, etc., and achieves the effect of low cost and low cost.

Inactive Publication Date: 2017-10-27
河北乐通金属材料有限公司
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when copper wires are used, due to the large difference in thermal expansion coefficient between the packaging resin and the wires, as the temperature rises after the semiconductor is started, the volume expansion due to heat will generate external stress on the copper bonding wires that form the circuit, especially for those exposed to harsh conditions. Semiconductor components under high thermal cycle conditions are prone to disconnection of copper bonding wires
In addition, the stability of copper is far less than that of gold, and pure copper wire is very easy to oxidize during storage and welding.
In order to improve bonding production efficiency and product reliability, and solve the problems of easy oxidation and short life of pure copper wire, packaging manufacturers currently mainly use palladium-plated copper wire as bonding wire
However, the surface hardness of the palladium-coated copper wire is relatively high, and the thickness of the palladium-coated layer is uneven, resulting in problems such as poor overall yield and low yield in the packaging process
In addition, the palladium-plated copper wire also has problems such as high solder ball hardness on the semiconductor package, and the chip is easy to be damaged.
Therefore, although several alternatives have appeared on the market to replace high-purity gold bonding wires, due to their own limitations, they cannot completely replace traditional bonding gold wires, resulting in a considerable number of LED and semiconductor packages still Using expensive high-purity gold bonding wire

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sliver alloy wire used for semiconductor packaging and preparation method thereof
  • Sliver alloy wire used for semiconductor packaging and preparation method thereof
  • Sliver alloy wire used for semiconductor packaging and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] a. Provide silver raw materials: purchase silver raw materials with a purity of 99.9% or more;

[0028] b. Electrolytic purification of silver raw materials: the electrolyte is silver nitrate solution (superior grade pure) diluted with high-purity water in a ratio of 1:4.5, the total required capacity is 50 liters; the coarse silver block is used as the anode (size is about 150mm×50mm×10mm) Immerse in the electrolyte, the monomer weight is 1000 grams, to ensure that 95% of the volume of the crude silver block is immersed in the electrolyte; high-purity silver foil or thin stainless steel plate (size 150mm×50mm×1mm) is immersed in the electrolyte as the cathode to ensure that the cathode sheet has 95% % Volume is immersed in the electrolyte, and the two poles are respectively connected to a DC power supply. Turn on the DC power supply, adjust the voltage to 6V, current 2.5A, and temperature control within 65℃. When the high purity silver (99.9995%) obtained from the cathode...

Embodiment 2

[0038] a. Provide silver raw materials: purchase silver raw materials with a purity of 99.9% or more;

[0039] b. Electrolytic purification of silver raw materials: the electrolyte is silver nitrate solution (superior grade pure) diluted with high-purity water in a ratio of 1:4.5, the total required capacity is 50 liters; the coarse silver block is used as the anode (size is about 150mm×50mm×10mm) Immerse in the electrolyte, the monomer weight is 1000 grams, to ensure that 95% of the volume of the crude silver block is immersed in the electrolyte; high-purity silver foil or thin stainless steel plate (size 150mm×50mm×1mm) is immersed in the electrolyte as the cathode to ensure that the cathode sheet has 95% % Volume is immersed in the electrolyte, and the two poles are respectively connected to a DC power supply. Turn on the DC power supply, adjust the voltage to 9V, the current 3.5A, and the temperature within 65℃. When the high purity silver (99.9995%) obtained from the cathode...

Embodiment 3

[0049] a. Provide silver raw materials: purchase silver raw materials with a purity of 99.9% or more;

[0050] b. Electrolytic purification of silver raw materials: the electrolyte is silver nitrate solution (superior grade pure) diluted with high-purity water in a ratio of 1:4.5, the total required capacity is 50 liters; the coarse silver block is used as the anode (size is about 150mm×50mm×10mm) Immerse in the electrolyte, the monomer weight is 1000 grams, to ensure that 95% of the volume of the crude silver block is immersed in the electrolyte; high-purity silver foil or thin stainless steel plate (size 150mm×50mm×1mm) is immersed in the electrolyte as the cathode to ensure that the cathode sheet has 95% % Volume is immersed in the electrolyte, and the two poles are respectively connected to a DC power supply. Turn on the DC power supply, adjust the voltage to 9V, the current 3.5A, and the temperature within 65℃. When the high purity silver (99.9995%) obtained from the cathode...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
elongationaaaaaaaaaa
Login to View More

Abstract

The invention discloses a silver alloy wire for semiconductor packaging and a preparation method thereof. The weight percentages of the components of the silver alloy wire are: 0.1-1.5% gold, 0.5-6.0% palladium, 0.003-0.006% cobalt, and the rest Top up 100% for silver. The silver alloy wire prepared by the invention has low cost, stable physical properties, good oxidation resistance and high reliability when used for welding on LEDs and semiconductor ICs and devices, and can replace expensive bonding gold wires and be used on LEDs and semiconductor packages.

Description

Technical field [0001] The invention relates to the technical field of metal materials, in particular to a silver alloy wire for semiconductor packaging and a preparation method thereof. Background technique [0002] The inner leads (also called bonding wires) required for LED light-emitting tubes and semiconductor packaging are usually made of gold wires made of high-purity gold, with a diameter ranging from Ф15μm to Ф50μm. As the price of gold continues to rise, packaging costs are getting higher and higher. For this reason, various packaging manufacturers have introduced copper wire bonding to replace gold wire bonding to relieve packaging cost pressure. Compared with gold wire, copper wire has better electrical and mechanical properties, so the same product can use copper wire with a smaller diameter for bonding, and it is more suitable for small die pads, narrow spacing and long bonding distance Packaged products. However, when copper wires are used, the thermal expansion...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C22C5/06C22C1/03C22F1/14H01B1/02
CPCC22C5/06C22C1/03C22F1/14H01B1/02
Inventor 房跃波
Owner 河北乐通金属材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products