Stripping method of SiC substrate on which GaN grows

Abstract

The invention discloses a stripping method of a SiC substrate on which GaN grows. The stripping method comprises the following steps: a hydrogen layer is formed under the surface layer of the SiC substrate; then, GaN monocrystal is generated on the surface layer, on which the hydrogen layer is formed, of the SiC substrate; since the SiC substrate is under the thermo-atmosphere at the temperature of more than 1000 DEG C in a GaN growing process, the hydrogen layer which is injected into the SiC substrate is laterally connected to form one layer of bubbles; finally, laser is adopted to cut along the hydrogen layer formed under the SiC substrate to strip GaN and the SiC substrate to finish the stripping of the SiC substrate on which the GaN grows so as to prevent the GaN monocrystal from being damaged in the stripping process. The method is simple and quick, a phenomenon that the SiC substrate on which the GaN grows is stripped directly through laser cutting is avoided, the waste of the SiC substrate material is avoided, a hydrogen ion layer is formed through the injection of hydrogen ions under the surface layer of the SiC substrate, and therefore, the hydrogen ion layer under the surface layer of the SiC substrate is under a hydrogen-rich state so as to form the hydrogen layer. The method is simple, and the formed hydrogen layer is stable.

Description

technical field [0001] The invention relates to a stripping technique of a GaN-grown SiC substrate, in particular to a stripping method of a GaN-grown SiC substrate. Background technique [0002] The traditional GaN single crystal growth process is to epitaxially GaN material on a sapphire substrate, and then lift off the substrate by laser to obtain GaN single crystal material. Since the crystal lattice of the sapphire substrate has a large mismatch with the GaN crystal lattice constant, the SiC material, which has better lattice matching with the GaN single crystal, has a great advantage over the sapphire substrate. However, the SiC band gap is close to and slightly smaller than that of the GaN material, and the SiC substrate cannot be removed by laser lift-off. Contents of the invention [0003] The purpose of the present invention is to provide a method for peeling off a GaN-grown SiC substrate, so as to overcome the deficiencies in the prior art. [0004] To achieve...

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Problems solved by technology

However, the band gap of SiC is close to and slightly smaller than that of GaN material, so the SiC substrate cannot be removed by laser lift-off

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