Gallium nitride semiconductor device and preparation method thereof
A gallium nitride and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as damage to gallium nitride semiconductor devices, device breakdown voltage drift, breakdown, etc., to reduce impurity adsorption And electrostatic effect, avoid leakage and breakdown, reduce the effect of surface leakage
Inactive Publication Date: 2017-11-07
SHENZHEN JING XIANG TECH CO LTD
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, in the prior art, due to the high electric field density, the leakage and breakdown of the GaN semiconductor device will be caused, which will damage the GaN semiconductor device and reduce the reliability of the GaN semiconductor device.
Furthermore, after repeated high-voltage tests of GaN power devices, the breakdown voltage of the device will drift. This unstable behavior is related to charge traps, which will cause harm to the reliability of the device and should be suppressed
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0036] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0037] Such as Figure 2a As shown, the embodiment of the present invention provides a gallium nitride semiconductor device, which includes from bottom to top: gallium nitride epitaxial layer 210, dielectric layer 220, source 231 and drain 232, gate 233, insulating layer 240, field plate metal layer 250 .
[0038] Wherein, the gallium nitri...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
Login to View More
Abstract
The present invention relates to the semiconductor material technology field, and provides a gallium nitride semiconductor device comprising a gallium nitride epitaxial layer; a dielectric layer arranged on the gallium nitride epitaxial layer; a source, a drain and a grid which are arranged on the dielectric layer and penetrate the dielectric layer separately to be connected with the gallium nitride epitaxial layer; and an insulating layer which is arranged on the source, the drain, the grid and the dielectric layer and of which the material is silicon dioxide. The gallium nitride semiconductor device of the present invention does not generate a phenomenon of breaking down an AlGaN layer easily, and further avoids the electric leakage and breakdown problems of the gallium nitride semiconductor device, thereby protecting the gallium nitride semiconductor device effectively, and enhancing the reliability of the gallium nitride semiconductor device.
Description
technical field [0001] The invention relates to the field of semiconductor technology, in particular to a gallium nitride semiconductor device and a preparation method thereof. Background technique [0002] Gallium nitride has the advantages of large band gap, high electron saturation rate, high breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance, so gallium nitride can be used to make semiconductor materials to obtain gallium nitride semiconductor devices . [0003] In the prior art, a gallium nitride semiconductor device is prepared by forming a silicon nitride layer on the surface of the gallium nitride epitaxial layer, etching a source contact hole and a drain contact hole on the silicon nitride layer, and Deposit metal in the electrode contact hole and drain contact hole to form the source and drain; then etch the silicon nitride layer and the aluminum gallium nitride layer in the gallium nitride epitaxial layer to form a ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L29/06H01L29/40H01L29/423H01L29/47H01L21/335H01L29/778
CPCH01L29/0611H01L29/0638H01L29/402H01L29/42356H01L29/475H01L29/66462H01L29/7783
Inventor 刘美华林信南刘岩军
Owner SHENZHEN JING XIANG TECH CO LTD