A lateral rc-igbt device with surface double gate control
A dual-gate control and device technology, which is applied to semiconductor devices, electric solid-state devices, electrical components, etc., can solve problems such as increased difficulty in process implementation, and achieve the effect of enhancing lateral withstand voltage and eliminating voltage foldback
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[0021] Below in conjunction with accompanying drawing and embodiment, describe technical scheme of the present invention in detail:
[0022] Such as Figure 4As shown, the cellular structure of a lateral RC-IGBT device with surface double gate control provided by the present invention is composed of two mutually symmetrical symmetrical structures, one of which includes an emitter structure, a second A MOS region structure, N- epitaxial layer 1, collector structure and P-type substrate 8; the emitter structure includes a first metal electrode 6, a P+ emitter region 7 and an N+ emitter region 5 below the first metal electrode 6 , the first metal electrode 6 forms ohmic contacts with the P+ emitter region 7 and the N+ emitter region 5 respectively; the first MOS region structure includes a first gate 4, a first dielectric isolation layer 3 and a first P-body region 2, Wherein, the first dielectric isolation layer 3 is located below and in contact with the first gate 4, and the a...
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