A lateral rc-igbt device with surface double gate control

A dual-gate control and device technology, which is applied to semiconductor devices, electric solid-state devices, electrical components, etc., can solve problems such as increased difficulty in process implementation, and achieve the effect of enhancing lateral withstand voltage and eliminating voltage foldback

Active Publication Date: 2020-05-12
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the traditional RC-IGBT is a vertical device, and the introduction of the backside process also makes the implementation of the process more difficult

Method used

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  • A lateral rc-igbt device with surface double gate control
  • A lateral rc-igbt device with surface double gate control
  • A lateral rc-igbt device with surface double gate control

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Embodiment Construction

[0021] Below in conjunction with accompanying drawing and embodiment, describe technical scheme of the present invention in detail:

[0022] Such as Figure 4As shown, the cellular structure of a lateral RC-IGBT device with surface double gate control provided by the present invention is composed of two mutually symmetrical symmetrical structures, one of which includes an emitter structure, a second A MOS region structure, N- epitaxial layer 1, collector structure and P-type substrate 8; the emitter structure includes a first metal electrode 6, a P+ emitter region 7 and an N+ emitter region 5 below the first metal electrode 6 , the first metal electrode 6 forms ohmic contacts with the P+ emitter region 7 and the N+ emitter region 5 respectively; the first MOS region structure includes a first gate 4, a first dielectric isolation layer 3 and a first P-body region 2, Wherein, the first dielectric isolation layer 3 is located below and in contact with the first gate 4, and the a...

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Abstract

A lateral RC-IGBT device with surface double-gate control belongs to the technical field of power semiconductors. The device connects a MOS transistor in series with the freewheeling diode of the traditional structure, and controls the opening and closing of the MOS transistor through the second gate to achieve the same device function as the traditional structure: when the RC-IGBT works forward, the MOS transistor Closed, the N+ collector area in the traditional structure is isolated by the MOS tube. At this time, the device is equivalent to a pure IGBT, which completely eliminates the voltage foldback phenomenon in the traditional structure; when the device works in reverse, the MOS is controlled by the second gate. The tube is turned on, and the freewheeling diode can work normally. At the same time, unlike the traditional vertical structure device, the present invention belongs to the horizontal device, the device is built on the epitaxial layer, and the realization of the device does not require the backside process, which greatly reduces the difficulty of the process; the RESURF structure also enhances the lateral withstand voltage capability of the device.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a lateral RC-IGBT (reverse conduction insulated gate bipolar transistor) device with surface double gate control. Background technique [0002] Power semiconductor devices have been widely used in aerospace, energy, industry and other fields due to their high withstand voltage and strong ability to control large currents. As a popular device in the field of power semiconductor technology, IGBT (Insulated Gate Bipolar Transistor) not only has the characteristics of high input impedance and low power consumption of MOSFET, but also has the strong current control ability of BJT. Its withstand voltage ranges from several hundred volts to several Kilovolts vary. Although IGBT has powerful power management capability, it only has unidirectional conduction capability, which greatly limits its application. In order to solve the defect that the IGBT only ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L29/739
CPCH01L27/0629H01L29/7393
Inventor 赵建明危兵徐开凯范洋范世杰舒心铭雷浩东胡明稹
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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