A short-circuited anode soi LIGBT
An anode and anode region technology, applied in circuits, semiconductor devices, electrical components, etc., can solve problems affecting the uniformity of device current distribution, and achieve the effects of low production cost, elimination of voltage foldback, and small vertical cell size.
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Embodiment 1
[0020] Such as figure 1 As shown, the structure of this example includes a P substrate 1, a buried oxide layer 2, and a top semiconductor layer stacked in sequence from bottom to top; along the lateral direction of the device, the top semiconductor layer is sequentially arranged from one side of the device to the other side It has a cathode structure, a P well region 4, an N drift region 3 and an anode structure; the cathode structure includes a P+ body contact region 6 and an N+ cathode region 5, and the bottom of the P+ body contact region 6 is in contact with the buried oxide layer 2, so The N+ cathode region 5 is located on the upper layer of the P well region 4, and the N+ cathode region 5 is in contact with the P+ body contact region 6 and the P well region 4, and the P+ body contact region 6 is in contact with the P well region 4; the P+ body contact region 6 and the N+ cathode The common terminal of region 5 is a cathode; the P well region 4 is in contact with the N dr...
Embodiment 2
[0024] Such as figure 2 As shown, the difference between this example and the structure of Example 1 is that the P-type island regions 12 in this example have unequal widths along the longitudinal direction of the device, and the snapback effect can be eliminated with a smaller vertical cell size.
Embodiment 3
[0026] Such as image 3 As shown, the difference between this example and the structure of Example 1 is that the N-type island region 11 and the P-type island region 12 are in contact with the P+ anode region 9 and the N+ anode region 10 in this example.
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