37results about How to "Easy Process Compatibility" patented technology

The invention relates to the technical field of vacuum metallurgy equipment, in particular to a vacuum reduction furnace for electromagnetic induction heating melting reduction of magnesium metal. The vacuum reduction furnace comprises a furnace body (1), a hopper (4) made of a hard insulating material is arranged in the furnace body (1), and a center channel penetrating the bottom face of the hopper (4) is arranged in the center position of the hopper (4); one or more annular grooves (7) are concentrically arranged in the bottom face of the hopper (4), and iron in the solid state or the molten state is arranged in the grooves (7); a rectangular iron core (6) is arranged in the furnace body (1), one side of the rectangular iron core (6) penetrates the center channel of the hopper (4), and the other side of the rectangular iron core (6) is wound with a primary side coil (9); and the leading-out end of a copper winding of the primary side coil (9) is led out of the furnace through an insulation sealing device on the furnace body (1) so as to be connected with a power device. The vacuum reduction furnace is reasonable in design, distribution of a temperature field of the reduction furnace can be adjusted, and the heat transferring efficiency is high; and the vacuum reduction furnace is used for thermal reduction production of high-vapor-pressure metal such as magnesium, lithium, strontium and calcium and the like.

The invention discloses a Si‑APD photodetector based on a fractal nanowire surface structure and a preparation method thereof, comprising: a P+ area of ​​the light-incoming layer with a fractal nano-wire surface structure, and a local area below the P+ area of ​​the light-incoming layer with a fractal nanowire surface structure The π region of the intrinsic absorption layer, the P region of the avalanche multiplication layer located under the π region of the intrinsic absorption layer, the N+ region of the electrode contact layer located below the P region of the avalanche multiplication layer, and the protection rings located under the two sides of the π region of the intrinsic absorption layer are N region, the upper end electrode arranged on the upper surface of the P+ region of the fractal nanowire surface structure light-incoming layer, and the lower electrode of the electrode contact layer N+ region and the lower surface of the N-region; the P+ region of the fractal nanowire surface structure light-incoming layer has a random fractal Surface structure of distributed vertical silicon nanowires. The invention solves the problems of low responsivity of the traditional Si-APD photodetector and almost no response in the near-infrared band, and can enhance the quantum efficiency of visible light detection and extend the response band to the near-infrared band.

The invention pertains to the field of microelectronic technology, in particular to a wet oxidation fabrication method of a CuxO resistance memory and an integration method of copper interconnection technique. In the memory, CuxO acting as the memory medium is fabricated by a wet oxidation method. The detailed steps are that hydrogen peroxide aqueous with a certain concentration (10 percent to 50percent) has a contact with the surface of the exposed Cu leads under a certain temperature (40 to 80 degree) to obtain the memory medium CuxO. The method in the invention has easy technique, low cost and no pollution, the memory medium formed is uniform, and no new impurity is introduced, with the ease to integrate with the copper interconnection technique of integrated circuit.

This invention provides a micro-silicon microphone and its preparation method, in which, said microphone includes a monocrystal silicon film and polysilicon film as the capacitor pole plates, the polysilicon film is a movable pole plate, several release holes are set on the monosilicon film and rib reinforcement structures are formed on the polysilicon film, the rib reinforcement structure is corresponding to the release hole on the monocrystal silicon film and inlayed in the release holes. The preparation method utilizes ICP technology to carry out deep bar etching to either get the release holes or realize polysilicon films with the rib reinforcement structure.

The present invention discloses a Si-APD photoelectric detector based on a micro-nano structure and a preparation method thereof, belonging to the photoelectric detection technology field. The Si-APD photoelectric detector based on the micro-nano structure comprises a P-type Si substrate (1), a micro-nano structure silicon layer N+ area (2) located above the center of the P-type Si substrate (1), protection annular areas, namely N areas (3) located above the two sides of the P-type Si substrate (1), upper-end electrodes (4) arranged on the upper surfaces of the micro-nano structure silicon layer N+ area (2) and the N areas, and a lower-end electrode (5) located on the lower surface of the P-type Si substrate (1), wherein the depth of the micro-nano structure silicon layer N+ area (2) is less than the depths of the protection annular areas, namely the N areas (3). The Si-APD photoelectric detector based on the micro-nano structure and the preparation method thereof of the present invention solve the problems that the conventional Si-APD photoelectric detector is lower in responsivity, can not respond a near-infrared band, etc., enables the response wave band to be expanded to the near-infrared band, and is higher in responsivity.

The invention discloses a device and a method for drying supercritical carbon dioxide microemulsion. The method comprises the following steps of: displacing a water-based cleaning fluid by using liquid carbon dioxide; adding a surfactant; heating the carbon dioxide to reach a supercritical state; and drying a photoresist or a microstructure in a micro-electromechanical system (MEMS). In the method, because a gas-liquid interface and the surface tension are prevented, high depth-to-width ratio or porous structures and the like can be cleaned and dried without damage. Compared with the conventional supercritical carbon dioxide drying method, the method has the advantages that: an organic solution is not required to be used, so that the photoresist and the like cannot be damaged; the drying time is greatly reduced, so that the problem of pattern collapse can be effectively solved. The method meets the requirements of reducing the consumption of the organic solution, saving energy and thelike in an international semiconductor technology blueprint, and is easily compatible with the conventional integrated circuit (IC) process.