37results about How to "Easy Process Compatibility" patented technology

The invention discloses a capacitive humidity sensor. The capacitive humidity sensor comprises a detection capacitor which consists of a substrate, a dielectric layer and a metallic electrode layer, wherein the detection capacitor is of a cantilever beam structure shape, the dielectric layer is arranged on the substrate, and the metallic electrode layer is located on the dielectric layer; and a humidity-sensitive strain layer is further arranged on the metallic electrode layer. The capacitive humidity sensor disclosed by the invention is simple in structure and convenient in manufacturing and has the advantages of good linearity, little temperature drift, high response speed, low sensitive capacitive loss, low parasitic capacitance, easiness in process compatibility with a CMOS (Complementary Metal Oxide Semiconductor), and the like.

The invention discloses a photoelectric detector based on graphene / boron-doped silicon quantum dots / silicon and a preparation method thereof. The photoelectric detector comprises an n type silicon substrate, a top electrode, a graphene film, a boron-doped silicon quantum dot film, and a bottom electrode. The photoelectric detector can carry out wide spectral detection, and a problem of low infrared detection response of a traditional silicon-based PIN junction is solved. According to the detector, graphene is used as an active layer and a transparent electrode, a dead layer is eliminated, and the absorption of incident light is enhanced. The boron-doped silicon quantum dot film is in the middle, the influence of a silicon surface state is reduced, and the reverse saturation current is suppressed at the same time. Under a certain reverse bias voltage effect, collision ionization is generated by photon-generated carriers and silicon lattice, and a high photoelectric response is obtained. The photoelectric detector and the preparation method have the advantages of a simple preparation process, low cost, a high response degree, fast response speed, a large internal gain, a small switching ratio, and easy integration.

The invention discloses a photoconductive detector based on boron-doped silicon quantum dot / graphene / silicon dioxide and a preparation method thereof. The photoconductive detector includes a p-type silicon substrate, a silicon dioxide isolation layer, a top electrode, a graphene film, a boron-doped silicon quantum dot film and a bottom electrode. The photoconductive detector is capable of carrying out wide-spectrum detection, so that a problem of low response to infrared detection by the traditional silicon-based PIN structure can be solved. Because the graphene is used to form an active layer and a transparent electrode, a dead layer is eliminated and incident light absorption is enhanced. With the silicon dioxide isolation layer, the silicon surface state can be reduced. The detector can work normally at a low bias voltage; the absorbed light of the boron-doped silicon quantum dot layer is converted into photon-generated carriers and the generated photon-generated carriers being hole electron pairs are separated under the effect of the built-in electric field, so that the high gain can be obtained. In addition, the preparation method is simple; the cost is low; the response degree is high; the response speed is fast; the internal gain is high; the switch ratio is low; and integration is easy to realize.

The invention relates to the technical field of vacuum metallurgy equipment, in particular to a vacuum reduction furnace for electromagnetic induction heating melting reduction of magnesium metal. The vacuum reduction furnace comprises a furnace body (1), a hopper (4) made of a hard insulating material is arranged in the furnace body (1), and a center channel penetrating the bottom face of the hopper (4) is arranged in the center position of the hopper (4); one or more annular grooves (7) are concentrically arranged in the bottom face of the hopper (4), and iron in the solid state or the molten state is arranged in the grooves (7); a rectangular iron core (6) is arranged in the furnace body (1), one side of the rectangular iron core (6) penetrates the center channel of the hopper (4), and the other side of the rectangular iron core (6) is wound with a primary side coil (9); and the leading-out end of a copper winding of the primary side coil (9) is led out of the furnace through an insulation sealing device on the furnace body (1) so as to be connected with a power device. The vacuum reduction furnace is reasonable in design, distribution of a temperature field of the reduction furnace can be adjusted, and the heat transferring efficiency is high; and the vacuum reduction furnace is used for thermal reduction production of high-vapor-pressure metal such as magnesium, lithium, strontium and calcium and the like.

The invention provides a bipolar resistive memory and a preparation method thereof. The bipolar resistive memory comprises a substrate; a lower electrode compounded on the upper surface of the substrate; a rectification function compounded on the lower electrode layer; a graphene layer compounded on the rectifying functional layer; a resistive dielectric layer compounded on the graphene layer; an upper electrode compounded on the resistive dielectric layer; the rectifying functional layer is composed of Al 2 o 3 、TiO 2 Formed with one or more of MgO. Compared with the prior art, the rectification functional layer in the bipolar resistive memory provided by the present invention can play the role of tunnel rectification, realize bidirectional rectification, and can also effectively suppress the gap between adjacent cells in the resistive memory array. The phenomenon of crosstalk misreading; at the same time, due to the existence of the graphene layer, the performance of the device is improved, the reset current is reduced, the response speed is improved, and the power consumption is reduced.

The invention discloses a method for preparing a flexible thermosensitive film material. According to the method, MnCO3 powder, Co2O3 powder, Ni2O3 powder are used as raw materials and subjected to grinding, screening, synthesizing, fine grinding, pre-molding forming and sintering under the oxygen-enriched atmosphere to be made into a ceramic target, a polyethylene glycol terephthalate sheet and a polyimide sheet are used as substrates, and an MCNO film is deposited at the room temperature in a sputtered mode through a radio frequency magnetron sputtering method. The method has the advantages that firstly, sputter deposition is completed at the room temperature, and the purpose of depositing the MCNO thermosensitive film on the polyethylene glycol terephthalate substrate, the polyimide substrate and other organic flexible substrates is achieved; secondly, the MCNO film prepared through the method is low in specific resistance, and the negative temperature resistance coefficient is high, so that responsivity of elements is better increased, and noise of the elements is better lowered; thirdly, preparation is conducted at the normal temperature, high-temperature heat treatment is not needed, energy consumption is low, energy is saved, and the environment is protected; and fourthly, the sputter deposition temperature is low, the method is easily compatible with a Si-based semiconductor process, and the thermosensitive elements can be directly prepared on Si-based reading circuit chips, so that the cost for preparing thermosensitive type uncooled infrared focal plane arrays is greatly lowered.

The invention provides a photon-assisted porous silicon electrochemical etching tank which comprises a tank body, a fixing support, electrodes and a photon-assisted mechanism. The fixing support, the electrodes and the photon-assisted mechanism are arranged in the tank body; the fixing support is used for fixing a silicon chip to be etched; the electrodes comprises a cathode and an anode, and the cathode and the anode are fixed on two sides of the fixing support respectively; and the photon-assisted mechanism is arranged between the fixing support and the cathode, used for providing illumination for the silicon chip to be etched, and light source of the photon-assisted mechanism is sealed in transparent polycarbonate (PC) plastic which has a grooved gate structure to facilitate flow of etching solution. During a double groove electrochemical etching process, the photon-assisted mechanism between the cathode and the silicon chip to be etched in the tank body is used for irradiating the silicon chip to be etched directly at close range, therefore holes with a certain concentration are formed in the silicon chip to be etched, and quality and efficiency of the double groove electrochemical etching process are guaranteed.

The invention discloses a Si‑APD photodetector based on a fractal nanowire surface structure and a preparation method thereof, comprising: a P+ area of ​​the light-incoming layer with a fractal nano-wire surface structure, and a local area below the P+ area of ​​the light-incoming layer with a fractal nanowire surface structure The π region of the intrinsic absorption layer, the P region of the avalanche multiplication layer located under the π region of the intrinsic absorption layer, the N+ region of the electrode contact layer located below the P region of the avalanche multiplication layer, and the protection rings located under the two sides of the π region of the intrinsic absorption layer are N region, the upper end electrode arranged on the upper surface of the P+ region of the fractal nanowire surface structure light-incoming layer, and the lower electrode of the electrode contact layer N+ region and the lower surface of the N-region; the P+ region of the fractal nanowire surface structure light-incoming layer has a random fractal Surface structure of distributed vertical silicon nanowires. The invention solves the problems of low responsivity of the traditional Si-APD photodetector and almost no response in the near-infrared band, and can enhance the quantum efficiency of visible light detection and extend the response band to the near-infrared band.

The invention pertains to the field of microelectronic technology, in particular to a wet oxidation fabrication method of a CuxO resistance memory and an integration method of copper interconnection technique. In the memory, CuxO acting as the memory medium is fabricated by a wet oxidation method. The detailed steps are that hydrogen peroxide aqueous with a certain concentration (10 percent to 50percent) has a contact with the surface of the exposed Cu leads under a certain temperature (40 to 80 degree) to obtain the memory medium CuxO. The method in the invention has easy technique, low cost and no pollution, the memory medium formed is uniform, and no new impurity is introduced, with the ease to integrate with the copper interconnection technique of integrated circuit.

The invention discloses a back-illuminated Si-PIN photodetector and a preparation method thereof, which relates to a photodetection device structure in the field of photodetection technology, and the photodetector includes an I-type substrate 1, a P region 2, and a P+ region 3. The N region 4 of the nanostructured silicon layer and the upper and lower electrodes, the electrodes include the upper electrode 5 located on the P region 2 and the P+ region 3 and the lower electrode 6 located on the N region 4 of the nanostructured silicon layer. The upper electrode 5 is used for connecting with the cathode of the external circuit; the lower electrode 6 is used for connecting with the anode of the external circuit. This new type of Si photodetector solves the problems of low responsivity and inability to respond to near-infrared bands of traditional Si photodetectors, improves the absorption rate of visible light and near-infrared light, extends the response band to the near-infrared band, and has a higher responsivity. high.

The invention discloses a front-illuminated Si-PIN photodetector with micro-nanostructure silicon as the photosensitive layer and a preparation method thereof. The front-illumination Si-PIN photodetector with micro-nanostructure silicon as the photosensitive layer includes an I-type substrate , the N region located below the I-type substrate, the micro-nano structure layer P region located above the center of the I-type substrate, the P+ region located above both sides of the I-type substrate, the upper electrode located on the upper surface of the I-type substrate, and the The lower end electrode on the lower surface of the N region. The front-illuminated Si-PIN photodetector with micro-nanostructure silicon as the photosensitive layer of the present invention has higher responsivity than traditional Si photodetectors, and can also realize the detection of near-infrared light at the same time. The preparation process is simple and can be Compatible with conventional silicon semiconductor processes.

This invention provides a micro-silicon microphone and its preparation method, in which, said microphone includes a monocrystal silicon film and polysilicon film as the capacitor pole plates, the polysilicon film is a movable pole plate, several release holes are set on the monosilicon film and rib reinforcement structures are formed on the polysilicon film, the rib reinforcement structure is corresponding to the release hole on the monocrystal silicon film and inlayed in the release holes. The preparation method utilizes ICP technology to carry out deep bar etching to either get the release holes or realize polysilicon films with the rib reinforcement structure.

The invention belongs to the technical field of magneto-optical devices, in particular to an all-solid-state electric field reconfigurable magneto-optic device. The invention adopts an all-solid-state structure to make it more compatible with the semiconductor process; utilizes the electric field to control the magneto-optic effect of the magnetic thin film in a non-volatile way, and reduces the static power consumption of the device; utilizes the uniformity of the ion migration of the adjustable material layer to realize The consistent control of the magneto-optical effect in the range of hundreds of microns has been achieved, and the problem that the device based on the ion-conducting filament mechanism is difficult to scale down has been solved; the separated adjustable material layer and magnetic medium layer have been used to realize the electric field control. Magneto-optical effect of a large class of magnetic insulators or semiconductors. Finally, the present invention realizes in one device at the same time: an all-solid-state structure; non-volatile manipulation of the magneto-optical effect by an electric field; large-area manipulation of the magneto-optic effect of magnetic thin films; universal manipulation of the magneto-optic effect of various magnetic insulators or semiconductors .

The present invention discloses a Si-APD photoelectric detector based on a micro-nano structure and a preparation method thereof, belonging to the photoelectric detection technology field. The Si-APD photoelectric detector based on the micro-nano structure comprises a P-type Si substrate (1), a micro-nano structure silicon layer N+ area (2) located above the center of the P-type Si substrate (1), protection annular areas, namely N areas (3) located above the two sides of the P-type Si substrate (1), upper-end electrodes (4) arranged on the upper surfaces of the micro-nano structure silicon layer N+ area (2) and the N areas, and a lower-end electrode (5) located on the lower surface of the P-type Si substrate (1), wherein the depth of the micro-nano structure silicon layer N+ area (2) is less than the depths of the protection annular areas, namely the N areas (3). The Si-APD photoelectric detector based on the micro-nano structure and the preparation method thereof of the present invention solve the problems that the conventional Si-APD photoelectric detector is lower in responsivity, can not respond a near-infrared band, etc., enables the response wave band to be expanded to the near-infrared band, and is higher in responsivity.

The invention discloses a device and a method for drying supercritical carbon dioxide microemulsion. The method comprises the following steps of: displacing a water-based cleaning fluid by using liquid carbon dioxide; adding a surfactant; heating the carbon dioxide to reach a supercritical state; and drying a photoresist or a microstructure in a micro-electromechanical system (MEMS). In the method, because a gas-liquid interface and the surface tension are prevented, high depth-to-width ratio or porous structures and the like can be cleaned and dried without damage. Compared with the conventional supercritical carbon dioxide drying method, the method has the advantages that: an organic solution is not required to be used, so that the photoresist and the like cannot be damaged; the drying time is greatly reduced, so that the problem of pattern collapse can be effectively solved. The method meets the requirements of reducing the consumption of the organic solution, saving energy and thelike in an international semiconductor technology blueprint, and is easily compatible with the conventional integrated circuit (IC) process.