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Method for generating skyrmion in magnetic multilayer film through current induction, magnetic storage unit and memory

A magnetic memory and magnetic storage technology, applied in static memory, digital memory information, parts and components of electromagnetic equipment, etc., can solve problems such as complex device structure, inability to achieve large-scale production, and high equipment requirements

Pending Publication Date: 2021-03-16
THE CHINESE UNIV OF HONG KONG SHENZHEN
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Problems solved by technology

[0003] At present, the methods for generating skyrmions in the field are mainly three methods: external magnetic field, radiation induction and current induction. However, due to technical limitations, the former two methods are difficult to apply to actual industrial production. For example, applying The method of external magnetic field will make the structure of the device too complex, which is not conducive to the realization of high storage density of information, while the method of using X-ray irradiation has too high requirements for equipment, needs to use synchrotron radiation light source, and cannot realize large-scale production

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  • Method for generating skyrmion in magnetic multilayer film through current induction, magnetic storage unit and memory
  • Method for generating skyrmion in magnetic multilayer film through current induction, magnetic storage unit and memory
  • Method for generating skyrmion in magnetic multilayer film through current induction, magnetic storage unit and memory

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preparation example Construction

[0047] Preparation of the device:

[0048] The specific structure of the device including the magnetic multilayer film is Ta(5) / [Pt(0.5) / Co(0.5)] 3 / Ru(0-3nm) / [Co(0.5) / Pt(0.5)] 3 / Ta(5), the unit is nanometer, Ta is used for the bottom layer and protective layer.

[0049] The device is grown on the photoetched device, and the photoetched device includes such as figure 1 The silicon wafer shown in (c) (300 nm thermal oxide layer). Using AJA's ultra-high vacuum magnetron sputtering device, 5nm Ta was used as a buffer layer, followed by a Pt / Co magnetization layer and a Ru wedge structure, and finally 5nm Ta was plated as a protective layer.

[0050] After the growth is completed, use acetone to ultrasonically clean the photoresist on the surface of the silicon wafer, so that the silicon wafer only remains as figure 1 (c) Shaped device. It should be emphasized here that when preparing the Ru layer of the sample, it is necessary to use a baffle equipped with magnetron sputter...

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Abstract

The invention provides a method for generating skyrmion in a magnetic multilayer film through current induction, and the method comprises the following steps: S1, providing a magnetic multilayer filmwhich comprises a first magnetic layer, a non-magnetic metal layer and a second magnetic layer which are sequentially stacked, wherein more than one antiferromagnetic coupled first strip and more thanone ferromagnetic coupled second strip are formed in the magnetic multilayer film, and the first strips and the second strips are alternately formed; the first strip and the second strip are parallelto each other along a first direction; S2, connecting the magnetic multilayer film into a circuit, and introducing alternating current to generate the skyrmion at the junction of the first strip andthe second strip, wherein the frequency of the alternating current is 47 kHz and 52 kHz, and the peak value of the alternating current is 37 mA-39mA. The method can be used for preparing a device withhigh integration level, and is also convenient to be compatible with the existing semiconductor process.

Description

technical field [0001] The invention relates to the technical field of magnetic storage, in particular to a method for generating skyrmions in a magnetic multilayer film by current induction, a magnetic storage unit and a memory. Background technique [0002] Magnetic skyrmions are topologically invariant spatial spin structures at the micro- and nano-scale, and can exist stably in bulk magnets with strong spin-orbit coupling or in nanomagnetic thin films adjacent to heavy metals. Because of its small size, low power consumption, and many advantages of non-volatile storage devices based on this structure, it is regarded as one of the options for next-generation information units. The generation of the topological magnetic structure is mainly the result of the competition between the magnetic exchange in the material, the magnetic anisotropy and the Dzyaloshinskii-Moriya interaction (DMI interaction) provided by the interface. For the stable generation of the medium, it is n...

Claims

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Application Information

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IPC IPC(8): H01L43/12H01L43/02H01L43/10G11C11/16
CPCG11C11/161H10N50/80H10N50/01H10N50/85
Inventor 周钰卿周艳赵月雷武凯杨晟张溪超
Owner THE CHINESE UNIV OF HONG KONG SHENZHEN
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