Front-illuminated si-pin photodetector using micro-nano structured silicon as photosensitive layer and preparation method thereof

A micro-nano structure and photodetector technology, applied in the field of photoelectric detection, can solve the problems of poor thermomechanical properties, poor crystal quality, and incompatibility, and achieve the effects of high absorption rate, low cost, and high responsivity.
CN104064610BInactive Publication Date: 2017-02-22UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2017-02-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a front-illuminated Si-PIN photodetector with micro-nanostructure silicon as the photosensitive layer and a preparation method thereof. The front-illumination Si-PIN photodetector with micro-nanostructure silicon as the photosensitive layer includes an I-type substrate , the N region located below the I-type substrate, the micro-nano structure layer P region located above the center of the I-type substrate, the P+ region located above both sides of the I-type substrate, the upper electrode located on the upper surface of the I-type substrate, and the The lower end electrode on the lower surface of the N region. The front-illuminated Si-PIN photodetector with micro-nanostructure silicon as the photosensitive layer of the present invention has higher responsivity than traditional Si photodetectors, and can also realize the detection of near-infrared light at the same time. The preparation process is simple and can be Compatible with conventional silicon semiconductor processes.
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Description

technical field

[0001] The invention belongs to the technical field of photoelectric detection, and relates to the structure of a photoelectric detection device, in particular to a front-illuminated Si-PIN photodetector with micro-nano structured silicon as a photosensitive layer and a preparation method thereof. Background technique

[0002] As an important part of optical fiber communication systems, infrared imaging systems, laser alarm systems and laser ranging systems, photoelectric detectors are widely used in civilian applications. At present, widely used photodetectors mainly include Si-based photodetectors and InGaAs near-infrared photodetectors. Among them, Si-PIN photodetectors have fast response speed and high sensitivity, and Si materials are easy to purify, easy to dope, rich in resources, low in cost, easy to large-scale integration and mature related technologies, so they are widely used. However, due to the large forbidden band width of Si material (1.12 eV...

Claims

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