Short circuit anode SOI LIGBT

An anode and anode region technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems affecting the uniformity of current distribution of devices, and achieve the effects of low production cost, elimination of voltage foldback, and small vertical cell size.

Active Publication Date: 2017-09-15
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the conductance modulation effect caused by the conversion from MOSFET mode to IGBT mode, the voltage fo

Method used

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  • Short circuit anode SOI LIGBT
  • Short circuit anode SOI LIGBT
  • Short circuit anode SOI LIGBT

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0019] Example 1

[0020] like figure 1 As shown, the structure of this example includes a P substrate 1, a buried oxide layer 2, and a top semiconductor layer stacked in sequence from bottom to top; along the lateral direction of the device, the top semiconductor layer is sequentially arranged from one side of the device to the other side It has a cathode structure, a P well region 4, an N drift region 3 and an anode structure; the cathode structure includes a P+ body contact region 6 and an N+ cathode region 5, and the bottom of the P+ body contact region 6 is in contact with the buried oxide layer 2, so The N+ cathode region 5 is located on the upper layer of the P well region 4, and the N+ cathode region 5 is in contact with the P+ body contact region 6 and the P well region 4, and the P+ body contact region 6 is in contact with the P well region 4; the P+ body contact region 6 and the N+ cathode The common terminal of region 5 is a cathode; the P well region 4 is in cont...

Example Embodiment

[0023] Example 2

[0024] like figure 2 As shown, the difference between this example and the structure of Example 1 is that the P-type island regions 12 in this example have unequal widths along the longitudinal direction of the device, and the snapback effect can be eliminated with a smaller vertical cell size.

Example Embodiment

[0025] Example 3

[0026] like image 3 As shown, the difference between this example and the structure of Example 1 is that the N-type island region 11 and the P-type island region 12 are in contact with the P+ anode region 9 and the N+ anode region 10 in this example.

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PUM

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Abstract

The invention belongs to the technical field of power semiconductors, and relates to a short circuit anode SOI LIGBT having alternate NP voltage withstand buffer layer structures. Compared with the conventional short circuit anode LIGBT, alternately distributed N-type island regions and P-type island regions are introduced to an anode region without high concentration field stop layer. The P-type island regions are completely exhausted in forward blocking, and the incompletely exhausted N-type island regions have the field stop effect. The device is affected by electron barrier blocking of the P-type island regions under unipolar mode conduction, and electron current in a drift region flows through the N-type island regions and a high resistance drift region between the island regions and the anode structure and is finally collected by the N+ anode. The beneficial effects of the short circuit anode SOI LIGBT are that the short circuit anode SOI LIGBT has faster disconnection speed and lower loss in comparison with the conventional LIGBT and eliminates the voltage return phenomenon under the smaller size of longitudinal cells in comparison with the conventional short circuit anode LIGBT having the continuous field stop layer.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and relates to a short-circuit anode SOI LIGBT (Lateral Insulated Gate Bipolar Transistor, lateral insulated gate bipolar transistor). Background technique [0002] IGBT has the characteristics of high-speed switching and voltage driving of field effect transistors, as well as the characteristics of low saturation voltage of bipolar transistors and the ability to easily realize large currents. Lateral IGBT (LIGBT) is easy to integrate in power integrated circuits, especially SOI-based LIGBT can completely eliminate the hole-electron pair injection of the bulk silicon LIGBT substrate, and the use of dielectric isolation SOI technology is easy to achieve complete electrical isolation of the device, which promotes SOI LIGBT Widely used in high-tech industries such as power electronics, industrial automation, and aerospace. [0003] When the IGBT is in the off state, the electron barrie...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/739
CPCH01L29/0615H01L29/7394
Inventor 罗小蓉赵哲言邓高强黄琳华孙涛张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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