Short circuit anode SOI LIGBT

An anode and anode region technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems affecting the uniformity of current distribution of devices, and achieve the effects of low production cost, elimination of voltage foldback, and small vertical cell size.
CN107170802AActive Publication Date: 2017-09-15UNIV OF ELECTRONIC SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
UNIV OF ELECTRONIC SCI & TECH OF CHINA
Publication Date
2017-09-15

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Abstract

The invention belongs to the technical field of power semiconductors, and relates to a short circuit anode SOI LIGBT having alternate NP voltage withstand buffer layer structures. Compared with the conventional short circuit anode LIGBT, alternately distributed N-type island regions and P-type island regions are introduced to an anode region without high concentration field stop layer. The P-type island regions are completely exhausted in forward blocking, and the incompletely exhausted N-type island regions have the field stop effect. The device is affected by electron barrier blocking of the P-type island regions under unipolar mode conduction, and electron current in a drift region flows through the N-type island regions and a high resistance drift region between the island regions and the anode structure and is finally collected by the N+ anode. The beneficial effects of the short circuit anode SOI LIGBT are that the short circuit anode SOI LIGBT has faster disconnection speed and lower loss in comparison with the conventional LIGBT and eliminates the voltage return phenomenon under the smaller size of longitudinal cells in comparison with the conventional short circuit anode LIGBT having the continuous field stop layer.
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Description

technical field

[0001] The invention belongs to the technical field of power semiconductors, and relates to a short-circuit anode SOI LIGBT (Lateral Insulated Gate Bipolar Transistor, lateral insulated gate bipolar transistor). Background technique

[0002] IGBT has the characteristics of high-speed switching and voltage driving of field effect transistors, as well as the characteristics of low saturation voltage of bipolar transistors and the ability to easily realize large currents. Lateral IGBT (LIGBT) is easy to integrate in power integrated circuits, especially SOI-based LIGBT can completely eliminate the hole-electron pair injection of the bulk silicon LIGBT substrate, and the use of dielectric isolation SOI technology is easy to achieve complete electrical isolation of the device, which promotes SOI LIGBT Widely used in high-tech industries such as power electronics, industrial automation, and aerospace.

[0003] When the IGBT is in the off state, the electron barrie...

Claims

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