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Backside illuminated Si-PIN photoelectric detector and preparation method thereof

A photodetector, back-illuminated technology, applied in the field of photodetection, can solve the problems of poor thermomechanical performance, poor crystal quality, and incompatibility, and achieve the effects of low cost, high responsivity, and simple preparation process

Inactive Publication Date: 2013-11-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

However, InGaAs single crystal semiconductor materials have disadvantages such as high price, poor thermomechanical properties, poor crystal quality, and not easy to be compatible with existing silicon microelectronics processes.

Method used

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  • Backside illuminated Si-PIN photoelectric detector and preparation method thereof
  • Backside illuminated Si-PIN photoelectric detector and preparation method thereof

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Embodiment Construction

[0040] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0041] A back-illuminated Si-PIN photodetector, such as figure 1 , 2 As shown, it includes an I-type substrate 1, a P region 2 disposed above the center of the I-type substrate 1, and a P region located on both sides of the I-type substrate 1 and adjacent to the P region. + Area 3, the N-type nano-microstructure silicon layer 4 located on the back side of the I-type substrate, located in the P-type area 2 and P + The upper end electrode 5 on the upper surface of the region 3 and the lower end electrodes 6 located on both sides under the N-type nano-microstructure silicon layer 4 .

[0042] The N-type nano-microstructure silicon layer is a layered microstructure distributed in a three-dimensional spatial array obtained by performing nanoimprint etching or other nano-etching techniques on heavily diffused phosphorus-doped N regions.

[0043] T...

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Abstract

The invention discloses a backside illuminated Si-PIN photoelectric detector and a preparation method thereof and relates to a photoelectric detector structure in the technical field of photoelectric detection. The photoelectric detector comprises an I-type substrate 1, an area P 2, areas P+ 3, a nano structure silicon layer area N 4 and an upper end and lower end electrodes; the electrode comprises the upper end electrode 5 positioned on the area P 2 and the areas P+3, and the lower end electrodes 6 positioned on the nano structure silicon layer area N 4, wherein the upper end electrode 5 is used for being connected with the negative electrode of an external circuit, and the lower end electrodes 6 are used for being connected with the positive electrode of the external circuit. The novel Si photoelectric detector solves the problem that a traditional Si photoelectric detector is relatively low in responsitivity and cannot respond to the near infrared wave band, improves the absorption rate to visible light and near infrared light, has the responding wave band expanded to the near infrared wave band, and is higher in responsitivity.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and relates to the structure of a photoelectric detection device, in particular to a back-illuminated Si-PIN photodetector with nano-microstructure silicon as a photosensitive layer and a preparation method thereof. Background technique [0002] As an important part of optical fiber communication system, infrared imaging system, laser warning system and laser ranging system, photoelectric detectors have been widely used in civilian and military applications. Currently widely used photodetectors mainly include Si photodetectors with a detection wavelength range of 400nm~1000nm and InGaAs near-infrared photodetectors with a detection wavelength range of 1000nm~3000nm. Among them, Si material is the most widely used material in the semiconductor industry due to its advantages such as easy purification, easy doping, abundant resources, low cost, easy large-scale integration, and matur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/105H01L31/0352H01L31/18
CPCY02P70/50
Inventor 李伟郭安然渠叶君廖家科王冲蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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