Microsilicon microphone and its preparing method

A microphone and micro-silicon technology, which is applied in the field of micro-silicon microphones and its preparation, can solve the problems of high structural stress, easy adhesion, and waveform distortion of the microphone, and achieve the effects of low cost, avoiding waveform distortion, and small structural stress

Inactive Publication Date: 2005-10-19
PEKING UNIV
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Problems solved by technology

At present, the surface of the polysilicon film of the microsilicon microphone is smooth, and it is prone to adhesion and waveform distortion during use.
The release hole processing technology of the microphone also needs to carry out concentrated boron diffusion to form a self-stopping layer first, then in EPW solution (ethylenediamine NH 2 (CH 2 ) 2 NH 2 , catechol C 6 h 4 (OH) 2 , water H 2 O) can only be formed by corrosion in the middle, because the long-term concentrated boron diffusion will generate greater stress on the silicon wafer, the microphone also has the defects of large structural stress, poor stability, and high cost

Method used

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  • Microsilicon microphone and its preparing method
  • Microsilicon microphone and its preparing method
  • Microsilicon microphone and its preparing method

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Embodiment Construction

[0033] refer to Figure 1 - Figure 1 1. The process integration scheme for making micro-silicon microphones is as follows:

[0034] 1. Preparation of boron-expanded monocrystalline silicon plates:

[0035] 1. Silicon dioxide, the mask material required for thermal growth and expansion of boron, 2. Photolithography, 3. Erosion of part of the silicon dioxide to obtain a silicon dioxide pattern, 4. Short-term boron expansion to obtain the pattern of a single crystal silicon plate 5. Etch away the silicon dioxide used as a mask.

[0036] Second, the production of silicon dioxide insulating layer material:

[0037] 1. Obtain the silicon dioxide insulating layer by deposition method, 2. Photolithography, 3. Etch part of the silicon dioxide to obtain the pattern of the insulating layer.

[0038] Three, anti-corrosion layer material production:

[0039] 1. Deposit silicon nitride first, then deposit silicon oxide, and then deposit silicon nitride to obtain a multi-layer silicon ni...

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Abstract

This invention provides a micro-silicon microphone and its preparation method, in which, said microphone includes a monocrystal silicon film and polysilicon film as the capacitor pole plates, the polysilicon film is a movable pole plate, several release holes are set on the monosilicon film and rib reinforcement structures are formed on the polysilicon film, the rib reinforcement structure is corresponding to the release hole on the monocrystal silicon film and inlayed in the release holes. The preparation method utilizes ICP technology to carry out deep bar etching to either get the release holes or realize polysilicon films with the rib reinforcement structure.

Description

Technical field [0001] The invention belongs to the field of micro-electro-mechanical systems (MEMS) based on silicon technology, and in particular relates to a micro-silicon microphone and a preparation method thereof. Background technique [0002] For the field of acoustics, the consistency, stability and reliability of microphone devices manufactured by many traditional processing technologies are poor, which limits the application of microphones in high-fidelity and speech recognition. Silicon MEMS processing technology is a new processing method, and its processing methods and capabilities have yet to be invented, innovated and put into practical use. The microsilicon microphone is a capacitive microphone, which has the characteristics of low noise, low distortion, and high sensitivity. Its structure is: a boron-expanded monocrystalline silicon film is used as one plate of the capacitor, and the other plate of the capacitor is a doped polysilicon film. , There are seve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04R19/01H04R31/00
Inventor 张大成胡维乔东海李婷王玮田大宇罗葵李静阮勇
Owner PEKING UNIV
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