Self-assembly preparation method for floating gate layer of silicon nitride dielectric film with embedded metal tungsten quantum dots

Abstract

The invention discloses a self-assembly preparation method for a floating gate layer of a silicon nitride dielectric film with embedded metal tungsten quantum dots. According to the invention, at a room temperature, a magnetron sputtering method is adopted to prepare the silicon nitride dielectric film with the embedded metal tungsten quantum dots, and the film serves as a floating gate structure of a non-volatile memory; a sputtering target material is formed by small metal tungsten blocks on a silicon nitride target material, and the nano-scale metal tungsten quantum dots, which are uniformly distributed on the silicon nitride dielectric film, can be obtained through cosputtering at the room temperature; and the size and density of the metal tungsten quantum dots can be adjusted through adjusting the amount of the small metal blocks, namely by adjusting the coverage rate of the small metal blocks to the silicon nitride target material. The high-density metal tungsten quantum dots prepared by the invention have favorable thermal stability at the high temperature of 800 DEG C and are easy to compatible with a CMOS (Complementary Metal Oxide Semiconductor) technology. The silicon nitride dielectric film with embedded high-density metal tungsten quantum dots serves as the floating gate layer of the non-volatile memory and has good charge storage characteristics.

Description

[0001] technical field [0002] The invention relates to a self-assembly method for preparing a floating gate layer of a silicon nitride dielectric film embedded with metal tungsten quantum dots. [0003] Background technique [0004] In recent years, the Flash memory market has been expanding day by day, and higher requirements have been put forward for its integration and performance. According to ITRS 2010, the Technology node of Flash memory will enter the order of 20nm or below in the near future. However, the miniaturization of traditional flash memory with polysilicon floating gate structure is facing severe challenges. First of all, the miniaturization of flash memory greatly reduces the reliability of data storage and shortens the charge accumulation time. In addition, miniaturization aggravates the short-channel effect, increasing power consumption and interference between memory units. In order to solve these problems, a breakthrough must be made in the struct...

AI Technical Summary

Problems solved by technology

With the miniaturization of quantum dot non-volatile memory, the inhomogeneity of the electrical properties of memory cells brought about by the inhomogeneity of quantum dot density and size distribution is the key problem restricting its miniaturization.

Images