A high-speed low-power high-voltage power device

Abstract

The invention belongs to the technical field of power semiconductors and in particular relates to a high voltage power device with high speed and low power consumption. Compared with the traditional short circuit anode, a new structure places an N+ anode region in a P well region, and a cathode terminal adopts a segmented groove gate and a cathode groove structure. During forward conduction, a P well region of an anode terminal is taken as a potential barrier of an electron and can eliminate voltage return effect, the segmented groove gate increases channel density of the device, so as to reduce resistance of a channel region of the device, and the cathode groove physically blocks a hole from being quickly pumped out by a P+ cathode region, so as to improve conductivity modulation effect,thus lower conduction voltage drop is obtained; in a process of turning off the device, the anode terminal is enabled by virtue of a parasitic thin base region NPN transistor formed by an N+ anode region / a P well region / a N type buffer layer, pumping-out of electrons stored in a drift region is accelerated, turn-off speed of the device is increased, and turn-off loss is reduced. Compared with thetraditional short circuit anode structure, the high voltage power device provided by the invention eliminates the voltage return phenomenon in a smaller cellular size and has lower conduction voltagedrop and turn-off loss.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and relates to a slot-gate short-circuited anode SOI LIGBT (Lateral Insulated Gate Bipolar Transistor, lateral insulated gate bipolar transistor). Background technique [0002] IGBT is a new device combining MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Junction Transistor). It not only has the advantages of high input impedance of MOSFET and low on-resistance of BJT, but also realizes High breakdown voltage and high forward current. Among them, lateral IGBT (LIGBT) is easy to be integrated in silicon-based, especially SOI-based power integrated circuits. SOI-based LIGBT can completely eliminate the hole-electron injection of bulk silicon LIGBT substrate, and the use of dielectric isolation SOI technology is easy to achieve device integration. Complete electrical isolation makes SOI LIGBT widely used in high-tech industries such as power electronics, in...

AI Technical Summary

Problems solved by technology

However, the introduction of the traditional short-circuited anode structure, on the one hand, makes the device switch from the unipolar conduction mode to the bipolar conduction mode during the turn-on process, resulting in a voltage foldback effect, which affects the uniformity and reliability of the current distribution of the device, and limits the performance of the device. On the other hand, the short-circuited anode structure will reduce the injection efficiency of the anode holes and increase the conduction voltage drop

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