Non-junction tunneling field effect transistor and manufacturing method thereof

Abstract

The invention provides a non-junction tunneling field effect transistor and a manufacturing method thereof. The non-junction tunneling field effect transistor comprises an insulation layer, a channel region arranged on the insulation layer, and a source electrode and a drain electrode which are arranged at two sides of the channel region, a gate medium layer arranged on the channel region, and a grid electrode which is arranged on the gate medium layer and comprises a top grid and a static modulation grid electrode. The non-junction tunneling field effect transistor has at least one of advantages as follows, simple structure, easy realization through utilizing the relatively simple process, flexible and adjustable doping concentration and relatively low power consumption.

Description

technical field [0001] The invention relates to the field of electronics, in particular to a junctionless tunneling field effect transistor and a preparation method. Background technique [0002] The subthreshold swing of tunneling field effect transistors can reach a value lower than 60mV / dec at room temperature, breaking through the limit of traditional field effect transistors. This makes it have a good application prospect in the field of low-power integrated circuits in the future. However, the traditional tunneling transistor needs to use ion implantation and high-temperature annealing process to form the tunneling junction. The heat dissipation is large, the process is complicated, and there is impurity diffusion, so it is difficult to form a small-sized abrupt junction. The junctionless field effect transistor does not require ion implantation to form a junction, but it still relies on the drift and diffusion of carriers to work, so the subthreshold swing is also li...

AI Technical Summary

Problems solved by technology

However, the traditional tunneling transistor needs to use ion implantation and high temperature annealing process to form the tunneling junction. The heat dissipation is large, the process is complicated, and there is impurity diffusion, so it is difficult to form a small-sized abrupt junction.

The junctionless field effect transistor does not require ion implantation to form a junction, but it still relies on the drift and diffusion of carriers to work, so the subthreshold swing is also limited by 60mV / dec

[0003] Therefore, whether it is the current junctionless field effect transistor or the tunneling field effect transistor, its structure and preparation method still need to be improved.

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