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Polyoxometallate-based resistive random access memory and preparation method therefor

A polyoxometalate and resistive variable memory technology, which is applied in the direction of electrical components, can solve the problems of poor mechanical properties, insufficient stability, and difficult adjustment, and achieve high mechanical properties, controllable electrical properties, and easy adjustment. Effect

Inactive Publication Date: 2017-11-10
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above deficiencies in the prior art, the object of the present invention is to provide a resistive variable memory based on polyoxometalates and a preparation method thereof, aiming at solving the problems of poor mechanical properties and poor switching of the existing resistive variable memory. Small, insufficient stability and difficult to adjust the problem

Method used

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  • Polyoxometallate-based resistive random access memory and preparation method therefor
  • Polyoxometallate-based resistive random access memory and preparation method therefor
  • Polyoxometallate-based resistive random access memory and preparation method therefor

Examples

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Effect test

Embodiment 1

[0053] Dissolve 10 mg of polyoxometalate in 10 mL of acetonitrile solvent to obtain a 1 mg / ml polyoxometalate solution; use a 100 nm thick aluminum electrode on the PET plastic substrate to pass through the mask in the form of thermal evaporation Plate forming the bottom electrode of the metal film, spin-coating polymethyl methacrylate on the bottom electrode of the metal film to form the first polymer layer, and then annealing at 100°C for 1 hour;

[0054] Spin-coating a polyoxometalate solution on the annealed first polymer layer to form a polyoxometalate layer; spin-coating polymethyl methacrylate on the polyoxometalate layer to form a second polymer Layer; On the second polymer layer, a 100 nm thick aluminum electrode is formed into a metal thin film top electrode in the form of thermal evaporation, and finally a flexible nonvolatile resistive change memory based on polyoxometallate is obtained.

Embodiment 2

[0056] Dissolve 10 mg of polyoxometalate in 5 mL of water to obtain a 2 mg / ml polyoxometalate aqueous solution; use 80 nm thick copper electrode on the PET plastic substrate to form it through a mask in the form of thermal evaporation Metal film bottom electrode, spin-coated polyvinylpyrrolidone on the metal film bottom electrode to form the first polymer layer, and then perform annealing at 90°C for 1 hour;

[0057] Spin-coating a polyoxometalate aqueous solution on the annealed first polymer layer to form a polyoxometallate layer; spin-coating polyvinylpyrrolidone on the polyoxometalate layer to form a second polymer layer; On the second polymer layer, an 80 nm thick copper electrode is formed as a metal thin film top electrode in the form of thermal evaporation, and finally a flexible nonvolatile resistive change memory based on polyoxometallate is obtained.

[0058] In summary, the present invention combines the polyoxometalate layer, the first polymer layer and the second poly...

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Abstract

The invention discloses a polyoxometallate-based resistive random access memory and a preparation method therefor. The polyoxometallate-based resistive random access memory comprises a flexible substrate, and a bottom electrode, a first polymer layer, a polyoxometallate layer, a second polymer layer and a top electrode which are arranged on the flexible substrate from the bottom up in sequence; by virtue of the first polymer layer and the second polymer layer, the polyoxometallate layer can be protected so as to prevent the polyoxometallate layer from being contacted with water and oxygen in air, thereby directly improving the stability of the device; by simply regulating the dimension and thickness of the polyoxometallate layer, controllable electrical performance and storage performance of the memory can be realized; furthermore, the combination between the polymer layers and the polyoxometallate layer has extremely high flexibility, so that high mechanical performance of the device can be realized; and in addition, the polyoxometallate-based resistive random access memory provided by the invention has the advantages of easy regulation and control, high mechanical performance, high switch ratio, high stability and the like, and can be widely applied to the fields of economic, social development and national security and the like.

Description

Technical field [0001] The invention relates to the field of resistive random access memory, in particular to a resistive random access memory based on polyoxometallate and a preparation method thereof. Background technique [0002] Resistive random access memory (RRAM) is a type of nonvolatile memory that can be reversibly switched between a high resistance state and a low resistance state under the action of an external electric field. Resistive memory has the potential to replace the existing mainstream Flash memory at the 32 nm node and below. RRAM has become the current new type due to its simple memory cell structure, fast working speed, low power consumption, stable information, and low volatility. An important research direction of memory. [0003] Although research on RRAM has made some progress in recent years, it still has many shortcomings that need to be overcome, such as poor mechanical performance, relatively small switches, insufficient stability, and difficulty in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/8836H10N70/021
Inventor 周晔陈晓丽韩素婷
Owner SHENZHEN UNIV