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Flexible non-volatile memory based on black phosphorus quantum dots and preparation method of flexible non-volatile memory

A technology of black phosphorus quantum and quantum dots, which is applied in the field of flexible non-volatile memory based on black phosphorus quantum dots and its preparation, can solve the problems of non-volatile memory such as poor mechanical properties, insufficient stability, and difficult regulation, and achieve The effects of controllable electrical performance, controllable storage performance, and easy regulation

Active Publication Date: 2017-05-31
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a flexible non-volatile memory based on black phosphorus quantum dots and its preparation method, so as to solve the problem of poor mechanical properties of existing non-volatile memory Small, insufficient stability, and difficult to control the problem

Method used

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  • Flexible non-volatile memory based on black phosphorus quantum dots and preparation method of flexible non-volatile memory
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  • Flexible non-volatile memory based on black phosphorus quantum dots and preparation method of flexible non-volatile memory

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Embodiment 1

[0068] Transfer 6 mg of black phosphorus material powder to a 40 ml scintillation tube in a nitrogen box, then add 20 ml of N-methyl-2-pyrrolidone to obtain a 0.3 mg / ml black phosphorus powder solution, and add ethylene glycol to the black phosphorus powder solution amine, in a sealed state for 2 hours in a water bath to prepare an organic solution of black phosphorus quantum dots; on the PE plastic substrate, a 100nm thick aluminum electrode is used to form a metal film bottom electrode through a mask in the form of thermal evaporation, and on the metal film bottom Spin-coat polymethyl methacrylate on the electrode to form the first polymer layer, and then anneal at 100°C for 1 h; spin-coat an organic solution of black phosphorus quantum dots on the annealed first polymer layer to form black phosphorus quantum dots. Dot layer; spin-coat polymethyl methacrylate on top of the black phosphorus quantum dot layer to form a second polymer layer; on the second polymer layer, a 100nm ...

Embodiment 2

[0070] Transfer 6 mg of black phosphorus material powder to a 40 ml scintillation vial in a nitrogen box, then add 30 ml of N-methyl-2-pyrrolidone to obtain a 0.2 mg / ml black phosphorus powder solution, and add hydroboration to the black phosphorus powder solution The organic solution of black phosphorus quantum dots was prepared by ultrasonication in a water bath in a sealed state for 1 hour; an 80nm thick copper electrode was used on the PE plastic substrate to form the bottom electrode of the metal film through a mask in the form of thermal evaporation, and the bottom electrode of the metal film was formed on the bottom of the metal film. Spin-coat polystyrene on the electrode to form the first polymer layer, and then anneal at 90°C for 2 hours; spin-coat black phosphorus quantum dot organic solution on the annealed first polymer layer to form a black phosphorus quantum dot layer; Spin-coat polystyrene on the black phosphorus quantum dot layer to form a second polymer layer;...

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Abstract

The invention discloses a flexible non-volatile memory based on black phosphorus quantum dots and a preparation method of the flexible non-volatile memory. The flexible non-volatile memory based on the black phosphorus quantum dots comprises a flexible substrate and a metal thin film bottom electrode, a first polymer layer, a black phosphorus quantum dot layer, a second polymer layer and a metal thin film top electrode which are sequentially arranged on the flexible substrate from bottom to top, wherein the metal thin film bottom electrode and the metal thin film top electrode comprise metal materials with extensibility. The flexible non-volatile memory based on the black phosphorus quantum dots has the advantages of high mechanical property, large switch ratio, high stability and the like, is easy to control, and can be widely applied to the fields such as economy, social development and national security.

Description

technical field [0001] The invention relates to the field of nonvolatile memory, in particular to a flexible nonvolatile memory based on black phosphorus quantum dots and a preparation method. Background technique [0002] Resistive RAMs (RRAMs), which use materials with switchable resistance as the active layer sandwiched between two electrodes, are generally considered to be the best candidates for a new generation of nonvolatile memories. Although there are many researches on non-volatile memory at present, the existing non-volatile memory still has many shortcomings such as poor mechanical properties, small switches, insufficient stability, and difficult adjustment and control. [0003] Therefore, the prior art still needs to be improved and developed. Contents of the invention [0004] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a flexible non-volatile memory based on black phosphorus quantum dots and its pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H10B69/00H10B43/30
CPCH10B69/00
Inventor 韩素婷周晔
Owner SHENZHEN UNIV