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A flexible non-volatile memory based on black phosphorus quantum dots and its preparation method

A quantum dot, non-volatile technology, used in semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of poor mechanical properties, insufficient stability, and difficult regulation of non-volatile memory, and achieve controllable electrical properties. , The storage performance is controllable and easy to regulate

Active Publication Date: 2019-11-05
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a flexible non-volatile memory based on black phosphorus quantum dots and its preparation method, so as to solve the problem of poor mechanical properties of existing non-volatile memory Small, insufficient stability, and difficult to control the problem

Method used

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  • A flexible non-volatile memory based on black phosphorus quantum dots and its preparation method
  • A flexible non-volatile memory based on black phosphorus quantum dots and its preparation method
  • A flexible non-volatile memory based on black phosphorus quantum dots and its preparation method

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Embodiment 1

[0068] Transfer 6 mg of black phosphorus material powder to a 40 ml scintillation tube in a nitrogen box, and then add 20 ml of N-methyl-2-pyrrolidone to obtain a 0.3 mg / ml black phosphorus powder solution. Add ethylene dichloride to the black phosphorus powder solution. Amine, in a water bath in a sealed state, sonicated for 2 hours to prepare an organic solution of black phosphorous quantum dots; on the PE plastic substrate, a 100nm thick aluminum electrode was used to form a metal film bottom electrode through a mask in the form of thermal evaporation. Polymethyl methacrylate was spin-coated on the electrode to form the first polymer layer, and then annealed at 100°C for 1 hour; black phosphorus quantum dot organic solution was spin-coated on the annealed first polymer layer to form black phosphorus quantum Dot layer; spin-coated polymethyl methacrylate on the black phosphorous quantum dot layer to form a second polymer layer; on the second polymer layer, a 100nm thick alumin...

Embodiment 2

[0070] Transfer 6 mg of black phosphorus material powder to a 40 ml scintillation tube in a nitrogen box, and then add 30 ml of N-methyl-2-pyrrolidone to obtain a 0.2 mg / ml black phosphorus powder solution. Add borohydride to the black phosphorus powder solution The organic solution of black phosphorous quantum dots is prepared by ultrasonication in a water bath for 1 hour in a sealed state; an 80nm thick copper electrode is used on the PE plastic substrate to form a metal thin film bottom electrode through a mask in the form of thermal evaporation. Spin-coating polystyrene on the electrode to form a first polymer layer, then annealing at 90°C for 2h; spin-coating a black phosphorous quantum dot organic solution on the annealed first polymer layer to form a black phosphorous quantum dot layer; Polystyrene was spin-coated on the black phosphorous quantum dot layer to form a second polymer layer; on the second polymer layer, an 80nm thick copper electrode was thermally evaporated ...

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Abstract

The invention discloses a flexible nonvolatile memory based on black phosphorus quantum dots and a preparation method thereof. The flexible nonvolatile memory based on black phosphorus quantum dots includes: a flexible substrate, and sequentially arranged on the The metal film bottom electrode, the first polymer layer, the black phosphorus quantum dot layer, the second polymer layer, and the metal film top electrode on the flexible substrate; the metal film bottom electrode and the metal film top electrode are made of ductile Metal material composition. The flexible non-volatile memory based on black phosphorus quantum dots of the present invention has performance advantages such as easy regulation, high mechanical performance, large switching ratio, high stability, etc., and can be widely used in the fields of economy, social development, national security, and the like.

Description

Technical field [0001] The present invention relates to the field of non-volatile memory, in particular to a flexible non-volatile memory based on black phosphorous quantum dots and a preparation method thereof. Background technique [0002] Resistive random access memories (RRAMs) that use switchable resistor materials as the active layer and sandwiched between two electrodes in a sandwich structure are generally considered to be the best candidates for a new generation of non-volatile memory. Although there are many current researches on non-volatile memory, the existing non-volatile memory still has many shortcomings that need to be overcome, such as poor mechanical performance, relatively small switches, insufficient stability, and difficult control. [0003] Therefore, the existing technology needs to be improved and developed. Summary of the invention [0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a fl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L27/11568H10B69/00H10B43/30
CPCH10B69/00
Inventor 韩素婷周晔
Owner SHENZHEN UNIV