Piezoelectric film and preparation method thereof

A piezoelectric film and film-forming agent technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, circuits, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problem of not being able to obtain large-area piezoelectric Thick films and piezoelectric thick films cannot be applied on a large scale to MEMS micro-drivers and a large number of cracks in piezoelectric films to achieve the effects of reducing cracks, improving mechanical properties, and surface integrity

Active Publication Date: 2017-11-14
SHANGHAI REALFAST DIGITAL TECH CO LTD
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the above method is used to prepare, due to the effect of sintering stress, a large number of cracks will be generated on the surface of the pre-prepared piezoelectric film, so that a large-area p

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Piezoelectric film and preparation method thereof
  • Piezoelectric film and preparation method thereof
  • Piezoelectric film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] This embodiment discloses a piezoelectric film and a preparation method thereof. The material of the piezoelectric film is Pb(Zr 0.53 Ti 0.47 )O 3 and, the piezoelectric film has a thickness of 2 μm and an area of ​​4 inches, which greatly increases the area of ​​the existing piezoelectric film, so compared to the piezoelectric film of the prior art, the purpose of this embodiment is to prepare a A large-area lead zirconate titanate piezoelectric "thick" film, referred to as PZT piezoelectric thick film.

[0033] The piezoelectric film disclosed in this embodiment includes a substrate and a PZT piezoelectric film layer on the substrate. Specifically, refer to figure 1 and figure 2 , in this embodiment, the substrate 1 includes a base 11, a plurality of protrusions 12 arranged on the base 11, and an isolation layer 13, an electrode layer 14, and a crystal layer sequentially stacked on the base 11 and the protrusions 12. Seed layer 15.

[0034] More specifically, i...

Embodiment 2

[0053] In the description of Embodiment 2, the similarities with Embodiment 1 will not be repeated here, and only the differences with Embodiment 1 will be described. The difference between embodiment 2 and embodiment 1 is that the piezoelectric film of this embodiment is a ZnO piezoelectric thick film with a thickness of 5 μm, and the structure of the substrate and the shape of the protrusions are also different.

[0054] refer to Figure 4 and Figure 5 , in this embodiment, the substrate 2 includes a base 21 , a plurality of protrusions 22 disposed on the base 21 , and an isolation layer 23 and an electrode layer 24 sequentially stacked on the base 21 and the protrusions 22 .

[0055] Specifically, in this embodiment, the shape of the protrusions 22 is a sphere, and the arrays are arranged on the surface of the base 21 . The height of the spherical protrusion 22 in this embodiment is 12 μm, and its projected area on the surface of the base 21 is 314 μm 2 .

[0056] The ...

Embodiment 3

[0067] In the description of Embodiment 3, the similarities with Embodiment 1 will not be repeated here, and only the differences with Embodiment 1 will be described. The difference between Example 3 and Example 1 is that the piezoelectric film of this example is a PZT piezoelectric thick film with a thickness of 1.35 μm; at the same time, in the preparation method of this example, the steady-state liquid The film formers in the phase precursors are different.

[0068] Specifically, in this embodiment, the film-forming agent is 0.5g polyvinylpyrrolidone; The ratio is about 0.03:100.

[0069] In step three, repeat the operations of coating and preliminary annealing n times, in this embodiment, n is preferably 20; finally, sinter the 21-layer PZT piezoelectric film at 550°C-700°C for 5min-60min , preferably sintered at 700°C for 15 minutes for crystallization annealing.

[0070] For the rest, referring to the description in Example 1, a PZT piezoelectric thick film with a thi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Remanent polarizationaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a piezoelectric film. The preparation method comprises the steps of: preparing a steady-state liquid-phase precursor, wherein composition of the steady-state liquid-phase precursor matches that of the piezoelectric film; providing a base, and preparing protrusions serving as stress relief structures on the surface of the base; sequentially preparing an isolation layer and an electrode layer on the surfaces of the base and the protrusions so as to form a substrate; and preparing the piezoelectric film by painting the steady-state liquid-phase precursor on the surface, away from the base, of the substrate and performing primary annealing. According to the preparation method disclosed by the invention, the stress caused by the too large area of the base is effectively relieved through preparing the substrate having the stress relief structures, thus the piezoelectric film with the advantages of being large in area, crack-free and good in performance is prepared. The invention further discloses the piezoelectric film prepared by adopting the preparation method.

Description

technical field [0001] The invention belongs to the technical field of piezoelectric material preparation, and in particular relates to a piezoelectric film and a preparation method thereof. Background technique [0002] Piezoelectric films are widely used in micromechanical electronic systems (MEMS) and other fields due to their superior piezoelectric, ferroelectric and electromechanical coupling properties. [0003] Piezoelectric films generally include piezoelectric thin films and piezoelectric thick films. Piezoelectric film refers to a piezoelectric film whose thickness is less than 1 μm; and piezoelectric thick film is a material between piezoelectric film and millimeter-scale bulk material, and its thickness is generally 1 μm to 100 μm. Piezoelectric thick films are currently widely used in many fields such as transducers, sensors, MEMS micro-drivers, and micro-motors. This is because devices made of piezoelectric thick films not only take into account the low operat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L41/39H01L41/43H01L41/18H01L41/187C04B35/491C04B35/453
CPCC04B35/453C04B35/491H10N30/85H10N30/8554H10N30/093H10N30/097
Inventor 张小飞吴胜强李令英周岩李鹏钱波谢永林
Owner SHANGHAI REALFAST DIGITAL TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap