Resolving fcvd's line bending with deposition adjustments

Abstract

A method of reducing line curvature and surface roughness of a pillared substrate includes forming a treated surface by treating the pillared substrate with free radicals. Free radicals can be silicon-based, nitrogen-based or oxy-based. The method may include forming a dielectric film over the treated surface by reacting an organosilicon precursor and an oxygen precursor. The method may include curing the dielectric film at a temperature of about 150° C. or less. A method of reducing line bow and surface roughness of a pillared substrate includes forming a dielectric film over a pillared substrate by reacting an organosilicon precursor, an oxygen precursor, and a free radical precursor. The method may include curing the dielectric film at a temperature of about 150° C. or less. The radical precursors may be selected from the group consisting of nitrogen radical precursors, oxygen radical precursors, and silicon radical precursors.

Description

technical field [0001] Embodiments of the present disclosure generally relate to surface treatment and formation of dielectric films. Background technique [0002] As device nodes shrink, narrow, high aspect ratio pillars become mechanically brittle and prone to bending due to stress or force imbalances during deposition. For example, high aspect ratio silicon oxide pillars are susceptible to this bending. Stress or force imbalances around the slender struts can be caused by capillary forces and flowable chemical vapor deposition (FCVD) meniscus profiles, viscous forces between the FCVD deposition and the substrate (e.g., caused by intermolecular forces between dangling bonds) and / or localized stresses due to surface roughness. [0003] figure 1 is a schematic cross-sectional view showing a portion of the semiconductor device 100 in which a line bend occurs between two pillars within the semiconductor device 100 . Such as figure 1 As shown, the high aspect ratio device ...

AI Technical Summary

Problems solved by technology

[0005] During deposition, the non-uniform distribution of the more viscous flowable film into the openings 104 between the pillars also leads to further line bending due to the lack of fluidity of the deposited film between the pillars

The uneven distribution of deposition can also cause initial surface roughness of the film deposited between the pillars

Inhomogeneous reactions on the surface of the film deposited between the pillars with native oxide also cause bowed lines

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