A method of producing graphene using suspension technology

Abstract

The invention discloses a method using the suspension technology to produce graphene. The method includes: setting a constant-pressure funnel, a reactor furnace, a low-temperature cooling circulation control system and a collecting container, wherein mercury lamps for irradiating expanded flake graphite are arranged in the reaction furnace; setting a second circulating pipe, connecting the constant-pressure funnel and the reaction furnace to the second circulating pipe, pouring the expanded flake graphite into the constant-pressure funnel, and conveying the expanded flake graphite into the reaction furnace by the second circulating pipe; controlling helium at the bottom of the reaction furnace to lift the expanded flake graphite to allow the expanded flake graphite to be in a suspended state; starting the mercury lamps to perform continuous reaction for 4 hours to obtain the graphene. The method has the advantages that the graphene is produced by the suspended reaction, the expanded flake graphite is lifted in the reaction furnace by the helium to achieve the suspended effect, the suspended expanded flake graphite can be in photolysis reaction under the irradiation of the mercury lamps, reaction area is increased, and even and effective reaction is achieved.

Description

technical field [0001] The invention relates to the field of graphene, in particular to a method for producing graphene. Background technique [0002] The existing graphene preparation methods are mainly divided into four categories: mechanical exfoliation method, epitaxial growth method, chemical vapor deposition method and graphite oxide reduction method. The micromechanical exfoliation method is simple to operate and has high sample quality. It is currently the main method for producing single-layer high-quality graphene, but its controllability is poor, and the size of the obtained graphene is small, generally between 10-100um. time, and there is a lot of uncertainty, its production efficiency is low, the cost is high, and it is not suitable for large-scale production. However, the cost of raw materials and equipment required by the epitaxial growth method is high, and it requires a very high growth temperature (1400 degrees Celsius), so the equipment required is high, ...

AI Technical Summary

Problems solved by technology

The graphene that this method obtains is because single-layer graphene is very thin, easily agglomerates, causes to reduce the electrical conductivity of graphene and specific surface area, further influences its application in optoelectronic equipment, in addition, easily causes graphene in this redox process. Crystal structure defects, such as missing carbon atoms on carbocyclic rings, etc.

In the later stage of the preparation of the chemical vapor deposition method, the transfer process of graphene is more complicated, and the preparation cost is higher. In addition, the growth and connection of carbon atoms inside the substrate often have defects.

At the same time, when preparing graphene, because a part of the raw material is attached to the reaction container, the reaction is not uniform enough, and the quality of the prepared graphene needs to be improved.

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