Large-size light emitting diode epitaxial wafer and growing method thereof

Abstract

The invention discloses a large-size light emitting diode epitaxial wafer and a growing method thereof, and belongs to the technical field of semiconductors. A substrate is provided with a buffer layer, an unintentional doped GaN layer, an N-type doped GaN layer, a multiple quantum well layer, an electronic blocking layer and a P-type doped GaN layer which successfully and epitaxially grows on the substrate, wherein the buffer layer growth includes the successful growth of a first, a second and a third buffer layer on the substrate. According to the invention, three buffer layers are employed to effectively release the stress which is generated due to the differences of coefficients of thermal expansion between the substrate and the GaN, to reduce the stress which is generated due to the differences of lattice constants between the substrate and the GaN, to reduce the probability of tattering and shredding of the substrate when the large-size epitaxial wafer grows at high temperature, provides sound basis for the growth of the unintentional doped GaN layer and active layer structure in a nitride thin film structure layer. The substrate herein can increase the quality of large-size epitaxial material, improve the uniformity of the wavelength of the epitaxial wafer and adjusts the warpage of the epitaxial wafer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to the technical field of production of light-emitting diode epitaxial structures. technical background [0002] In recent years, nitride-based LED chips have been widely used in many fields such as display screens, backlights, lighting, and street lamps. With the large-scale application of LEDs, the market has put forward higher requirements for LED production efficiency and production costs. Epitaxy To continue to reduce LED manufacturing costs, the use of larger substrates has become an inevitable trend. [0003] At present, the epitaxial wafers in the LED market are mainly 4 inches and 2 inches. The epitaxial technology of 6 inches or even larger is not yet mature. One of the main reasons is that large-sized epitaxial wafers are prone to cracks and fragments during the growth process. , and the uniformity of the epitaxial wafer is poor, and the product yield ...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problems of growing epitaxial splits and poor uniformity of epitaxial wafers on large-sized substrates, the present invention proposes a large-sized light-emitting diode epitaxial wafer and a growth method thereof

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