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49results about How to "Solve process difficulties" patented technology

Method for producing 8014-H22 state aluminium alloy air-conditioner foil by cast-rolled blank

The invention provides a method for producing 8014-H22 state aluminium alloy air-conditioner foil by a cast-rolled blank, belonging to the technical field of aluminium alloy plate belt foil processing. The method particularly comprises the steps of: adopting the production way of cast-rolling and cold-rolling, carrying out homogenizing annealing on the cast-rolled blank before cold rolling, and controlling the annealing temperature to be 520-530 DEG C and the annealing time to be 22-25h; after the homogenizing annealing, leading compound to be dispersed, thinning crystalline grains so as to be beneficial to the cold rolling and ensuring the final mechanical property of the product; reasonably distributing the cold rolling channels by the plasticity of metal and the capability of rolling equipment, and carrying out eight-channel cold rolling on the cast-rolled blank with the thickness of 6.4-7.4mm; and carrying out finished product annealing on aluminium foil which is rolled to be 0.17-0.24mm, and controlling annealing temperature to be 360-370 DEG C and the annealing time to be 14-17h. By adopting the method, the mechanical properties of the 8014-H22 state aluminium alloy air-conditioner foil with the thickness of 0.17-0.24mm can be controlled to be: tensile strength sigma b: 120-135MPa; percentage of elongtation delta: 25-30%; and the blank convex valve: more than or equal to 6.5. The method meets the requirement of the mouldability of a large air-conditioner radiating fin.
Owner:JIANGSU DINGSHENG NEW MATERIAL JOINT STOCK CO LTD +1

Silicon waveguide end face coupling structure and manufacturing method thereof

ActiveCN111679363ASolve the problem of multi-mode transmissionSolve process difficultiesOptical waveguide light guidePhotonic ChipThin membrane
The invention relates to the technical field of photonic integrated devices, and discloses a silicon waveguide end face coupling structure and a manufacturing method thereof. The structure comprises substrate silicon, an oxide layer, a silicon waveguide and a silicon nitride layer which are sequentially stacked from bottom to top, the end of the silicon nitride layer is of a ridge-shaped structureto form a ridge-shaped silicon nitride waveguide, and the ridge-shaped silicon nitride waveguide is used for being coupled with the end face of a common single-mode optical fiber. The method comprises the following steps of preparing a silicon waveguide by using a thin film silicon layer positioned on an oxide layer on the upper surface of substrate silicon in a silicon-on-insulator substrate, preparing a pointed cone structure of which the width is gradually reduced at one end, coupled with the optical fiber, of the silicon waveguide to form a silicon waveguide pointed cone structure, depositing a silicon nitride layer on the silicon waveguide and the oxide layer, and carrying out shallow etching on the silicon nitride layer to prepare a ridge-shaped structure so as to form the ridge-shaped silicon nitride waveguide. The ridge-shaped silicon nitride waveguide conversion mode field can be matched with a common single-mode optical fiber, and is suitable for low-loss coupling of the silicon waveguide and the common single-mode optical fiber in the silicon photonic chip packaging process.
Owner:TSINGHUA UNIV

Large-size light emitting diode epitaxial wafer and growing method thereof

The invention discloses a large-size light emitting diode epitaxial wafer and a growing method thereof, and belongs to the technical field of semiconductors. A substrate is provided with a buffer layer, an unintentional doped GaN layer, an N-type doped GaN layer, a multiple quantum well layer, an electronic blocking layer and a P-type doped GaN layer which successfully and epitaxially grows on the substrate, wherein the buffer layer growth includes the successful growth of a first, a second and a third buffer layer on the substrate. According to the invention, three buffer layers are employed to effectively release the stress which is generated due to the differences of coefficients of thermal expansion between the substrate and the GaN, to reduce the stress which is generated due to the differences of lattice constants between the substrate and the GaN, to reduce the probability of tattering and shredding of the substrate when the large-size epitaxial wafer grows at high temperature, provides sound basis for the growth of the unintentional doped GaN layer and active layer structure in a nitride thin film structure layer. The substrate herein can increase the quality of large-size epitaxial material, improve the uniformity of the wavelength of the epitaxial wafer and adjusts the warpage of the epitaxial wafer.
Owner:YANGZHOU ZHONGKE SEMICON LIGHTING

DRAM (Dynamic Random Access Memory) structure with extended groove and making method thereof

The invention discloses a DRAM (Dynamic Random Access Memory) structure with an extended groove and a making method thereof. The structure comprises a PMOS (P-channel Metal Oxide Semiconductor) transistor and a groove capacitor which is connected with a source electrode of the PMOS transistor; the groove capacitor comprises a semiconductor substrate, alternatively arrayed P-type SiGe layers and P-type Si layers, a groove, a dielectric layer and a polysilicon layer, wherein the groove is positioned in the alternatively-arrayed P-type SiGe layers and P-type Si layers and inserted into the semiconductor substrate, the profile of the alternatively-arrayed P-type SiGe layers and P-type Si layers is in a shape of comb teeth, and the alternatively-arrayed P-type SiGe layers and P-type Si layers are used as a lower pole plate of the groove capacitor; the dielectric layer is positioned on the surface of the inner wall of the groove; the polysilicon layer is filled in the groove and used as an upper pole plate of the groove capacitor; an N-type Si layer is also prepared on the alternatively-arrayed P-type SiGe layers and P-type Si layers; and the PMOS transistor is made on the N-type Si layer. In the invention, the P-type SiGe layers and the P-type Si layers alternatively grow by adopting a doping and epitaxial technology, and the comb-tooth-shaped lateral wall is made by adopting selective etching, therefore, the structure of the deep groove type capacitor in a DRAM is improved, and the making process is simplified.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

DRAM (Dynamic Random Access Memory) structure with expansion groove and manufacturing method thereof

The invention discloses a DRAM (Dynamic Random Access Memory) structure with an expansion groove and a manufacturing method thereof. The structure comprises an NMOS (N-channel Metal Oxide Semiconductor) transistor and a groove capacitor connected with a source electrode thereof, wherein the groove capacitor comprises a semiconductor substrate, an N-type SiGe layer and an N-type Si layer which arealternately arranged, a groove, a dielectric layer and a polysilicon layer, wherein the groove is located in the N-type SiGe layer and the N-type Si layer which are alternately arranged and extends into the semiconductor substrate, and the section of a side wall of the groove is in a comb tooth shape; the N-type SiGe layer and the N-type Si layer which are alternately arranged are utilized as a lower pole plate; the dielectric layer is located at the surface of the inner wall of the groove; the polysilicon layer is filled in the groove and utilized as an upper pole plate of the groove capacitor; a P-type Si layer is also prepared on the N-type SiGe layer and the N-type Si layer which are alternately arranged; and the NMOS transistor is manufactured on the P-type Si layer. Through the method, the N-type SiGe layer and the N-type Si layer are alternately grown by utilizing a doping and epitaxial technique and the side wall in the comb tooth shape is manufactured by utilizing selective etching; and the method improves the structure of a deep groove capacitor in the DRAM and simplifies the manufacturing process.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Large-size special-shaped material pasting device and pasting control method

The invention discloses a large-size special-shaped material pasting device. The pasting device is composed of an installation base assembly, a pasting assembly, a visual recognition assembly and a special-shaped material taking assembly. The pasting assembly comprises a driving assembly, a Z-axis pasting assembly and an R-axis rotating assembly, wherein the driving assembly and the Z-axis pasting assembly are installed on a spline installation base, and the R-axis rotating assembly is arranged on a bottom fixing seat. The Z-axis pasting assembly is fixed through a three point and one line over-positioning type Z-axis spline, and pasting angle errors caused by rotation deviation are reduced by using various Z-axis buffering or pressure control connecting structures based on a single-sliding-rail and double-sliding-block fixing manner. The large-size special-shaped material pasting device has the beneficial effects that by the adoption of the large-size special-shaped material pasting head and a matched pasting control method, the pasting precision and pasting stability of large-size special-shaped materials can be improved, the material throwing rate is reduced, and the product pasting yield is increased; and the technical difficulty that automatic equipment is used for replacing manual work is overcome, manual work is saved, the production cost is reduced, and the production efficiency is improved.
Owner:深圳逻辑自动化科技有限公司

Wire winding disk of aviation tire bead ring winding machine

The invention provides a wire winding disk of an aviation tire bead ring winding machine, belonging to the technical field of bead ring winding disks. The wire winding disk comprises a wire nozzle, winding displacement rolls, two wire guide rolls and a wire winding disk, wherein the wire nozzle is fixed on the center of the wire winding disk, the winding displacement rolls are fixed on the periphery of the wire winding disk, and the two wire guide rolls are fixed on the wire winding disk. The wire winding disk has the beneficial effects that 1, the winding of a large-diameter steel wire can be ensured, the process difficulty of the large-diameter steel wire is overcome; 2, the bending of the large-diameter steel wire is reduced, the plastic deformation of the steel wire is avoided, and thus the guarantee is provided for realizing the high-efficiency winding; and 3, due to the reasonable winding displacement rolls design and the reasonable wire guide roll layout, the process difficulties of few fed wires, multiple supplied wires and large passive pulling tensile force in the process of winding the steel wire are solved, and due to the reasonable design of the wire nozzle, the guide function of spirally winding the steel wire is skillfully realized, and the reverse guide function in the process of winding the steel wire is realized with the positive rotation and the negative rotation of the wire winding disk.
Owner:哈尔滨工大宏图橡塑科技有限公司

Self-capacitance touch display panel and driving method thereof

The invention provides a self-capacitance touch display panel and a driving method thereof. The self-capacitance touch display panel comprises a first base plate, a second base plate and a liquid crystal layer, wherein the first base plate comprises a first substrate, a touch electrode layer, a driving circuit layer and a pixel electrode layer, the touch electrode layer is arranged on the side, close to the driving circuit layer, of the first substrate, the driving circuit layer is arranged on the side, away from the first substrate, of the touch electrode layer, and the pixel electrode layeris arranged on the side, away from the first substrate, of the driving circuit layer; the second base plate is arranged opposite to the first base plate and comprises a second substrate and a common electrode layer; and the liquid crystal layer is formed between the first substrate and the second substrate by filling. Integration of a vertical orientation display panel and a self-capacitance touchscheme is realized; compared with an externally-hanging touch display panel, tempered protective glass and a laminating process are omitted, and the cost is saved; compared with a traditional embedded touch display panel, the limitation that the electrodes can only adopt a common electrode reuse mode is broken through; and the sensitivity is higher, and the method is more suitable for large-sizecommercial products.
Owner:SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD

Device and method for preparing ethylene from ethane oxidative dehydrogenation

InactiveCN103933898AIncreased ethylene yieldReduce carbonation rateHydrocarbonsChemical/physical processesPetrochemicalChemistry
The invention belongs to the field of petrochemical production, and particular relates to a device and a method for preparing ethylene from ethane oxidative dehydrogenation. The device for preparing the ethylene from the ethane oxidative dehydrogenation comprises a main reaction tube; the side surface of the main reaction tube is provided with 1-8 branch pipe(s); the main reaction tube is filled with a catalyst, so that a catalyst bed layer can be formed; outlets of all the branch pipes are covered by the side surface of the catalyst bed layer; an oxygen source, an ethane gas source and an inert gas source are combined into one path and flow into a gas inlet hole of the main reaction tube; the oxygen source and the ethane gas source are combined into one path and flow into the plurality of branch pipes after respectively passing through an oxygen branch pipe stop valve and an ethane branch pipe stop valve. The method for preparing the ethylene from the ethane oxidative dehydrogenation comprises the steps of filling the catalyst and controlling technological parameters of the main tube and the branch pipes. According to the device and the method, a plurality of nodes can be provided for adjusting the flow velocity ratio of oxygen to ethane in the catalyst bed layer, so that the yield of the ethylene is obviously increased and reaches up to 18%; furthermore, the carbonization rate of the catalyst is reduced, and the service cycle of the catalyst is prolonged.
Owner:CHINA UNIV OF PETROLEUM (EAST CHINA)

Tooth blank finish turning hydraulic tool system

The invention discloses a tooth blank finish turning hydraulic tool system which mainly consists of a bearing sleeve, a rotary oil cylinder, a pull rod, a connecting sleeve, a connecting rod, a finishturning tire sleeve, a tooth blank, a finish turning tire seat, a flange plate, a connecting plate, a locating sleeve, a spacer bush, a corresponding hydraulic system and the like; the front end of the pull rod is connected with the connecting rod; the connecting sleeve is arranged at the tail of a spindle, and after alignment, the special rotary oil cylinder and the pull rod (which penetrates through a spindle hole) are arranged on the connecting sleeve; the connecting plate is arranged at the front end of the spindle of a lathe; finish turning tire sleeves in different sizes can be mountedon the finish turning tire seat as required so as to meet the requirement of machining the tooth blanks in various sizes; the finish turning tire seat is arranged on the flange plate in an alignment manner; and after the connecting plate is aligned, the flange plate is arranged on the connecting plate. The tooth blank finish turning hydraulic tool system is simple in structure, high in working efficiency, simple and convenient in clamping, wide in clamping range, adjustable in tensioning force and high in precision and can meet the finish turning requirements of the tooth blanks better.
Owner:吴丽娜

DRAM (Dynamic Random Access Memory) structure with expansion groove and manufacturing method thereof

The invention discloses a DRAM (Dynamic Random Access Memory) structure with an expansion groove and a manufacturing method thereof. The structure comprises an NMOS (N-channel Metal Oxide Semiconductor) transistor and a groove capacitor connected with a source electrode thereof, wherein the groove capacitor comprises a semiconductor substrate, an N-type SiGe layer and an N-type Si layer which are alternately arranged, a groove, a dielectric layer and a polysilicon layer, wherein the groove is located in the N-type SiGe layer and the N-type Si layer which are alternately arranged and extends into the semiconductor substrate, and the section of a side wall of the groove is in a comb tooth shape; the N-type SiGe layer and the N-type Si layer which are alternately arranged are utilized as a lower pole plate; the dielectric layer is located at the surface of the inner wall of the groove; the polysilicon layer is filled in the groove and utilized as an upper pole plate of the groove capacitor; a P-type Si layer is also prepared on the N-type SiGe layer and the N-type Si layer which are alternately arranged; and the NMOS transistor is manufactured on the P-type Si layer. Through the method, the N-type SiGe layer and the N-type Si layer are alternately grown by utilizing a doping and epitaxial technique and the side wall in the comb tooth shape is manufactured by utilizing selective etching; and the method improves the structure of a deep groove capacitor in the DRAM and simplifies the manufacturing process.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Winding reel of a wire coil winding machine for aviation tires

The invention provides a wire winding disk of an aviation tire bead ring winding machine, belonging to the technical field of bead ring winding disks. The wire winding disk comprises a wire nozzle, winding displacement rolls, two wire guide rolls and a wire winding disk, wherein the wire nozzle is fixed on the center of the wire winding disk, the winding displacement rolls are fixed on the periphery of the wire winding disk, and the two wire guide rolls are fixed on the wire winding disk. The wire winding disk has the beneficial effects that 1, the winding of a large-diameter steel wire can be ensured, the process difficulty of the large-diameter steel wire is overcome; 2, the bending of the large-diameter steel wire is reduced, the plastic deformation of the steel wire is avoided, and thus the guarantee is provided for realizing the high-efficiency winding; and 3, due to the reasonable winding displacement rolls design and the reasonable wire guide roll layout, the process difficulties of few fed wires, multiple supplied wires and large passive pulling tensile force in the process of winding the steel wire are solved, and due to the reasonable design of the wire nozzle, the guide function of spirally winding the steel wire is skillfully realized, and the reverse guide function in the process of winding the steel wire is realized with the positive rotation and the negative rotation of the wire winding disk.
Owner:哈尔滨工大宏图橡塑科技有限公司

Doubling-acting side-pushing bend-forming Die

The invention provides a double-acting side-pushing bend-forming die. An upper base plate, an upper clamping plate, a stop plate and a stripping plate are sequentially mounted below an upper die base;a lower die plate and a lower base plate are sequentially mounted above the upper die base; an inner guide column is arranged in the upper clamping plate, the upper clamping plate and the upper baseplate are fixed to the upper die base, the upper die base and the upper clamping plate slide upwards and downwards along the inner guide column, and the inner guide column penetrates through the stripping plate and the lower die plate to realize a guide function; a first punch and a second punch are arranged in the upper clamping plate and penetrate through the stripping plate to enter the lower die plate and drive a forming block and a side-pushing block to move to realize side-pushing formation; and reset springs are arranged in the forming block and the side-pushing block and abut against spring stop blocks, and when the first punch and the second punch move upwards, the forming block and the side-pushing block restore under the effect of the elastic force of the reset springs. The double-acting side-pushing bend-forming die has the beneficial effects of being able to overcome the process difficulty of side-pushing bending and edge covering, realize normal automatic stripping and guarantee continuous production.
Owner:ANHUI XINYUE PRECISION MACHINERY

Method for producing 8014-H22 state aluminium alloy air-conditioner foil by cast-rolled blank

ActiveCN101805878BSolve process difficultiesSuccessful control of final mechanical propertiesRoll mill control devicesMetal rolling arrangementsAlcladHeat sink
The invention provides a method for producing 8014-H22 state aluminium alloy air-conditioner foil by a cast-rolled blank, belonging to the technical field of aluminium alloy plate belt foil processing. The method particularly comprises the steps of: adopting the production way of cast-rolling and cold-rolling, carrying out homogenizing annealing on the cast-rolled blank before cold rolling, and controlling the annealing temperature to be 520-530 DEG C and the annealing time to be 22-25h; after the homogenizing annealing, leading compound to be dispersed, thinning crystalline grains so as to be beneficial to the cold rolling and ensuring the final mechanical property of the product; reasonably distributing the cold rolling channels by the plasticity of metal and the capability of rolling equipment, and carrying out eight-channel cold rolling on the cast-rolled blank with the thickness of 6.4-7.4mm; and carrying out finished product annealing on aluminium foil which is rolled to be 0.17-0.24mm, and controlling annealing temperature to be 360-370 DEG C and the annealing time to be 14-17h. By adopting the method, the mechanical properties of the 8014-H22 state aluminium alloy air-conditioner foil with the thickness of 0.17-0.24mm can be controlled to be: tensile strength sigma b: 120-135MPa; percentage of elongtation delta: 25-30%; and the cup drawing valve: more than or equal to6.5. The method meets the requirement of the mouldability of a large air-conditioner radiating fin.
Owner:JIANGSU DINGSHENG NEW MATERIAL JOINT STOCK CO LTD +1

All-carbon ceramic axle-mounted brake disc

The invention discloses an all-carbon ceramic axle-mounted brake disc. The brake disc includes a disc hub and a plurality of friction discs which are coaxially piled up, wherein the disc hub is sleeved with the friction discs. The friction discs are interlocked and connected through connecting structures into a whole and the friction discs and the disc hub are also interlocked and connected through connecting structures into a whole; the friction discs are made from carbon ceramic composite materials and composed of heat dissipation reinforcement bars with the disc surfaces and the rear surfaces are arranged in the radial direction, the heat dissipation reinforcement bars between the piled-up friction discs make contact in a one-to-one corresponding mode, axial heat dissipation channels are formed in the two sides of the heat dissipation reinforcement bars, and communication grooves communicated with the axial heat dissipation channels on the two sides are formed between the heat dissipation reinforcement bars. The all-carbon ceramic axle-mounted brake disc has the advantages that the structure is simple, the heat dissipation effect is excellent, connection is reliable, maintenanceis convenient, and the weight is low, and reliable braking is ensured while the energy consumption and maintenance cost of a transport tool are reduced.
Owner:HUNAN SHIXIN NEW MATERIALS CO LTD

High linearity millimeter-wave device and manufacturing method thereof

The invention discloses a high-linearity millimeter wave device and a making method thereof mainly in order to solve the problem that the existing device is of poor linearity of trans-conductance. The device comprises, from bottom to top, a substrate layer (1), a nucleation layer (2), a buffer layer (3), a second channel region (4), a back barrier layer (5), a first channel region (6), an insertion layer (7), and a barrier layer (8). A groove reaching the back barrier layer is formed in the barrier layer through etching. An enhanced channel region (9) is arranged on the inside wall of the groove and on the barrier layer. A conductive cap layer (10) is arranged on the enhanced channel region. A source electrode (11) and a drain electrode (12) are arranged at the two ends of the conductive cap layer. A grooved gate is engraved on the conductive cap layer in the groove. A passivation layer (13) is arranged on the inside wall of the grooved gate and on the conductive cap layer other than the source electrode and the drain electrode. A T-shaped gate electrode (14) is arranged on the passivation layer in the grooved gate. The trans-conductance peak range is widened, and the linearity of trans-conductance is increased. The high-linearity millimeter wave device can be used in communication, navigation, radar, and base station systems.
Owner:XIDIAN UNIV

Silicon waveguide end face coupling structure and manufacturing method thereof

ActiveCN111679363BSolve the problem of multi-mode transmissionSolve process difficultiesOptical waveguide light guidePhotonic ChipPhysical chemistry
The invention relates to the technical field of photonic integrated devices, and discloses a silicon waveguide end face coupling structure and a manufacturing method thereof. The structure includes substrate silicon, oxide layer, silicon waveguide and silicon nitride layer stacked in sequence from bottom to top. The end of the silicon nitride layer is structured as a ridge structure to form a ridge silicon nitride waveguide. The ridge nitride Silicon waveguides are used for coupling to common single-mode fiber end-faces. The method includes: using a silicon-on-insulator substrate in a silicon-on-insulator substrate to prepare a silicon waveguide with a thin film silicon layer located on the oxide layer on the upper surface of the substrate silicon; preparing a tapered structure with a gradually narrowing width at one end of the silicon waveguide coupled with an optical fiber to form a silicon waveguide. A waveguide cone structure; a silicon nitride layer is deposited on the silicon waveguide and an oxide layer; a ridge structure is prepared by shallow etching the silicon nitride layer to form a ridge-shaped silicon nitride waveguide. The converted mode field of the ridge-shaped silicon nitride waveguide of the invention can be matched with common single-mode optical fiber, and is suitable for low-loss coupling between silicon waveguide and common single-mode optical fiber in the packaging process of silicon photonic chips.
Owner:TSINGHUA UNIV

A method and device for measuring the lateral thermal conductivity of a thin film

The invention provides a method for measuring the transverse thermal conductivity of a thin film. Firstly, the 3ω method is used to measure the longitudinal thermal conductivity of the thin film to be measured by using the second metal strip deposited on the surface of the thin film to be measured as a heating source; There is a substrate; the longitudinal direction is the direction perpendicular to the film to be tested; then use the 3ω method, using the first metal strip as the heating source, to measure the temperature rise in the longitudinal direction of the film to be tested, and combine the measured longitudinal thermal conductivity to deduce The thermal power in the longitudinal direction of the film to be measured is obtained; the temperature rise of the first metal strip is measured at the same time, and the thermal field generated by the temperature rise of the first metal strip in the transverse direction of the film to be measured leads to the temperature rise of the second metal strip; finally calculated The transverse thermal conductivity of the film to be measured with thickness d. The invention adopts the "substrate / film to be tested / metal strip" sample structure, which effectively avoids the technical difficulties of preparing samples with a suspended structure; the bimetallic strip can accurately measure the lateral temperature difference of the film, and the measurement result has higher accuracy.
Owner:WUHAN SCHWAB INSTR TECH

A method for preparing a coating by thermal spraying on large-size bent pipe workpieces

A method for thermal spraying preparation of a coating on a large size bending pipe workpiece is as follows: first the bending pipe workpiece surface is pretreated, a specially-designed bending pipe spraying tooling is used for clamping and fixing, the specially-designed bending pipe spraying tooling mainly includes a tooling body, a supporting frame, a motor, a drive chain wheel, a driven chain wheel, a main shaft, a countershaft, a fixing sleeve and a protection plate, the workpiece is fixed on the main shaft and the countershaft through the fixing sleeve and fastening screws, and can be driven, by the drive chain wheel, the driven chain wheel, the main shaft and the countershaft, to rotate, wherein the drive chain wheel, the driven chain wheel, the main shaft and the countershaft are driven by the motor. When in spraying, a spray gun respectively sprays once along A, B and C track lines to form one spray pass, and sprays by repeated multiple passes until needed coating thickness is obtained, and the workpiece is cooled by high-speed air curtain. The method can ensure uniform coating thickness, texture and property of arc length and outer circumference direction of the bending pipe workpiece, can effectively prevent the component deformation, and is especially suitable for thermal spraying preparation of the coating on large size bending pipe workpiece with the curvature radius greater than or equal to 2m, length less than 2m and diameter between 30-140mm.
Owner:GUANGDONG INST OF NEW MATERIALS
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