High linearity millimeter-wave device and manufacturing method thereof

Abstract

The invention discloses a high-linearity millimeter wave device and a making method thereof mainly in order to solve the problem that the existing device is of poor linearity of trans-conductance. The device comprises, from bottom to top, a substrate layer (1), a nucleation layer (2), a buffer layer (3), a second channel region (4), a back barrier layer (5), a first channel region (6), an insertion layer (7), and a barrier layer (8). A groove reaching the back barrier layer is formed in the barrier layer through etching. An enhanced channel region (9) is arranged on the inside wall of the groove and on the barrier layer. A conductive cap layer (10) is arranged on the enhanced channel region. A source electrode (11) and a drain electrode (12) are arranged at the two ends of the conductive cap layer. A grooved gate is engraved on the conductive cap layer in the groove. A passivation layer (13) is arranged on the inside wall of the grooved gate and on the conductive cap layer other than the source electrode and the drain electrode. A T-shaped gate electrode (14) is arranged on the passivation layer in the grooved gate. The trans-conductance peak range is widened, and the linearity of trans-conductance is increased. The high-linearity millimeter wave device can be used in communication, navigation, radar, and base station systems.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a high linearity millimeter wave device, which can be used in communication, satellite navigation, radar system and base station system. Background technique [0002] With the improvement of technology level, the existing first and second generation semiconductor materials can no longer meet the needs of higher frequency and higher power electronic devices, while electronic devices based on nitride semiconductor materials can meet this requirement, greatly improving The improvement of device performance has made the third-generation semiconductor materials represented by GaN widely used in the manufacture of microwave and millimeter wave devices. GaN is a new type of wide bandgap compound semiconductor material, which has excellent characteristics that many silicon-based semiconductor materials do not have, such as wide bandgap width, high breakdown electric ...

AI Technical Summary

Problems solved by technology

[0008] First, when the gate length of the device is less than 100nm, reducing the gate width will lead to poor support of the gate;

[0009] Second, as the gate-to-drain spacing decreases, the influence of parasitic capacitance on the frequency characteristics of the device will increase;

[0010] The third is that as the gate width decreases, the gate control capability decreases, resulting in a decrease in the linearity of the transconductance

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